[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/TEEM.2007.8.3.115

Impact of Passivation and Reliability for Base-exposed InGaP/GaAs HBTs

Park, Jae-Woo (Department of Electrical Engineering and Computer Science, KAIST)

Publication Information

Transactions on Electrical and Electronic Materials / v.8, no.3, 2007 , pp. 115-120 More about this Journal

Abstract

Reliability between passivated and unpassivated process with the base-exposed InGaP/GaAs HBTs was studied. A passivation of HBT was attempted by $SiO_2$ thin film deposition at $300^{\circ}C$ by means of PECVD. Base-exposed InGaP/GaAs HBTs before and after passivation were investigated and compared in terms of DC and RF performance. Over a total period of 30 days, passivated HBTs show only 2% degradation of DC current gain for the high current density of $40KA/cm^2$ . The measured thermal resistance of $2{\times}30{\mu}m^2$ single emitter InGaP/GaAs HBT passivated with PECVD $SiO_2$ devices can be extracted and was founded to be 1430 K/W. The estimated MTTF was $2{\times}10^7hr\;at\;T_j=125^{\circ}C$ with an activation energy $(E_a)$ of 1.37 eV.

Keywords

InGaP; HBTs; Reliability; Surface recombination current; Passivation; $SiO_2$ ;

Citations & Related Records

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