• Title/Summary/Keyword: PDAST

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YFY-LCD Pixel Design for Large Size, High Quality using PDAST(Pixel Design Array Simulator) (화소 설계 어레이 시뮬레이터 (PDAST)를 이용한 대면적 고화질을 위한 TFT-LCD의 화소설계)

  • Lee, Young-Sam;Youn, Young-Jun;Jeong, Sun-Sin;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1364-1366
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    • 1998
  • An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay. pixel charging ratio, level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Development and Application of TFT-LCD Pixel Design Tool (PDAST) (TFT-LCD 화소 설계 도구(PDAST)의 개발과 응용)

  • Lee, Yeong-Sam;Gwak, Ji-Hun;Choe, Jong-Seon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.6
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    • pp.416-428
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    • 1999
  • A user-interactive pixel design tool for high-quality TFT-LCDs is realized and used to explore the sensitivity of the various array and device parameters for optimizing pixel design. In this tool, the Thompson cable equation and gradual-channel approximation were used for the gate time delay and TFT current modeling respectively. With this tool, each capacitance element, and TFT and array dimensions can be optimized under given design specifications. The electrical characteristics such ascharging ratio, gate time delay, pixel voltage level-shift, and holding ratio can be analyzed. The sensitivity analysis of those design parameters were executed and presented.

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Simulations of Effects of Common Electrode Voltage Distributions on Pixel Characteristics in TFT -LCD (TFT-LCD 공통 전극 전압 분포에 따른 화소 특성 시뮬레이션)

  • Kim, Tae-Hyung;Park, Jae-Woo;Kim, Jin-Hong;Choi, Jong-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04a
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    • pp.165-168
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    • 2000
  • An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color fiat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. In addition, PDAST can estimate voltage distributions in common electrode which can affect pixel voltage and feed-through voltage. Since PDAST can simulate the gate, data and the pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of common electrode voltage can be effectively analyzed. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Array Simulation Characteristics and TFT-LCD Pixel Design Optimization for Large Size, High Quality Display (대면적 고화질의 TFT-LCD 화소 설계 최적화 및 어레이 시뮬레이션 특성)

  • 이영삼;윤영준;정순신;최종선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.137-140
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    • 1998
  • An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate si후미 distortion and pixel charging capability. which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio and level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Simulations of TFT-LCD Pixel Characteristics with Different Driving Methods (구동방법에 따른 TFT-LCD 화소 특성 시뮬레이션)

  • Hong, Sung-Jin;Choi, Jong-Sun;Lee, Sin-Doo
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1603-1605
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    • 2002
  • TFT-LCD is widely used for flat panel display. The large-size TFT-LCD panel requires a high speed driving and various driving methods because of signal delay, which is responsible for the shading effects. In this work, the floating and double driving methods are applied to Pixel Design Array Simulation Tool(PDAST) and the pixel characteristics of TFT-LCD array is simulated. Also, we have implemented the semi-empirical TFT model to PDAST, which makes to obtain a more accurate pixel characteristics.

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Charging and Feed-Though Characteristic Simulation of TFT-LCD by Applying Several Driving Method (구동 방법에 따른 TFT-LCD의 충전 및 Feed-Though 특성 시뮬레이션)

  • Park, Jae-Woo;Kim, Tae-Hyung;Noh, Won-Yoel;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.452-454
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    • 2000
  • In recent years, the Thin Film Transistor Liquid Crystal Display (TFT-LCD) is used in a variety of products as an interfacing device between human and them. Since TFT-LCDs have trend toward larger Panel sizes and higher spatial and/or gray-scale resolution, pixel charging characteristic is very important for the large panel size and high resolution TFT-LCD pixel characteristics. In this paper, both data line precharging method and line time extension (LiTEX) method is applied to Pixel Design Array Simulation Tool (PDAST) and the pixel charging characteristics of TFT-LCD array were simulated, which were compared with the results calculated by both PDAST In which the conventional device model of a-Si TFTs and gate step method is implemented.

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Simulations of Pixel Characteristics for Large Size and High Qualify TFT-LCD using a new sophisticated Capacitance Formulas (새로운 정전용량 계산식물 이용한 대면적 .고화질 TFT-LCD의 화소 특성 시뮬레이션)

  • 윤영준;정순신;김태형;박재우;최종선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.613-616
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    • 1999
  • An active-matrix LCD using thin film transistors (TFTs)has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed, The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Effects of Resistivity of Gate Line Material on TFT-LCD Pixel Operations (게이트 라인 물질의 저항률이 TFT-LCD 화소의 동작에 미치는 영향)

  • 이영삼;최종선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.321-324
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    • 1998
  • Pixel-Design Array Simulation Tool(PDAST) was used to profoundly the gate signal distortion and pixel changing capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio, level-shift of the pixel voltage were simulated with varying the resis5tivity of the gate line material. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Compensations of Pixel Voltages by Common Electrode Voltages and Simulations of Pixel Characteristics on Inversion Methods in TFT-LCD (TFT-LCD 공통 전극 전압에 의한 화소 전압 보상 및 Inversion 방법에 따른 화소특성 시뮬레이션)

  • Kim, Tae-Hyung;Park, Jae-Woo;Kim, Jin-Hong;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1745-1747
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    • 2000
  • TFT-LCD simulator, PDAST(Pixel Design Array Simulation Tool) could simulate the effect of the variation on the pixel characteristics. Since feed-through voltage in TFT-LCD can be a serious problem to pixel voltage characteristics, it should be compensated. It is applicable to various kinds of TFT-LCDs and can be used to calculate the spontaneous part of common electrode voltage accurately. Also, PDAST can estimate pixel voltage according to various inversion methods. It allows high-speed calculation and the information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Effects of an Empirical Capacitance Models and Storage Capacitance Types on TFT-LCD Pixel Operations (실험적 정전용량 모델과 축적 용량 설계 방법에 따른 TFT-LCD 화소의 동작 특성)

  • Yun, Young-Jun;Jung, Soon-Shin;Park, Jae-Woo;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1750-1752
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    • 1999
  • An active-matrix liquid crystal display (LCD) using thin film transistors (TFTs) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the sate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed. The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

  • PDF