• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2003년도 하계학술대회 논문집 C
• /
• pp.1843-1844
• /
• 2003

154 kV급 가스절연개폐장치(GIS)용dp 장착할 수 있는 내장형 극초단파 (UHF) 부분방전(PD) 센서의 고주파 특성을 전산모사 하였다. UHF PD 센서는 일종의 광대역 안테나이므로 3차원 전자기장 해석도구를 활용하여 주파수 또는 시간 영역에서 고주파특성을 해석하였다. 센서의 구조를 결정하는 센서장착용 구멍과 센서의 크기를 변수로 조절하면서 내장형 UHF PD 센서의 특성을 해석 하였다. 센서가 장착되는 구멍의 크기와 센서의 구조변화에 따라 반사손실이 변화하였으며 GIS의 전파 mode의 영향을 받는다.

• 센서학회지
• /
• 제29권6호
• /
• pp.399-406
• /
• 2020

Pd nanogap hydrogen sensors were developed using an elastomeric substrate and operated through an on-off mechanism. A 10 nm thick Pd thin film was formed on a polydimethylsiloxane (PDMS) substrate, and 50% of the physical strain was applied in the longitudinal direction to fabricated uniform nanogaps. The initial concentration of the hydrogen gas for the PDMS/Pd films was controlled, and subsequently, the on-off switching response was measured. We found that the average nanogap was less than 50 nm, and the Pd nanogap hydrogen sensors operated over a wide range of temperatures. In particular, the sensors work properly even at a very low temperature of -40℃ with a fast response time of 2 s. In addition, we have investigated the relative humidity and annealing effects.

• 센서학회지
• /
• 제15권2호
• /
• pp.120-126
• /
• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.

• 센서학회지
• /
• 제15권2호
• /
• pp.90-96
• /
• 2006

We have fabricated the Pd-blck/NiCr gate MISFET-type $H_2$ sensor to detect the hydrogen in atmosphere. A differential pair-type structure was used to minimize the intrinsic voltage drift of the MISFET. The Pd-black film was deposited in the argon environment by thermal evaporation. In order to eliminate the blister formation in the surface of the hydrogen sensing gate metal, Pd-black/NiCr double metal layer was deposited on the gate insulator. The scanning electron microscopy and the auger electron spectroscopy was used to analyze their surface morphology and basic structure. The Pd-black/NiCr gate MISFET has been shown high sensitivity and stability more than Pd-planar/NiCr gate MISFET.

• 센서학회지
• /
• 제19권2호
• /
• pp.87-91
• /
• 2010

Hydrogen gas sensors were fabricated using $PdO_x$ loaded with SWNTs. The nanoparticle powders of $SWNT_s-PdO_x$ composite were deposited on Si wafer substrates by a vacuum filtering deposition method. The fabricated sensors were tested against hydrogen gas. The composition ratio that exhibited the highest response to hydrogen gases was SWNTs : $PdO_x$ = 98 : 2 in wt% ratio at operating temperature of about $150^{\circ}C$. The response and recovery times were shorter than 1.0 min. in presence of 1000 ppm hydrogen.

• 센서학회지
• /
• 제17권6호
• /
• pp.414-417
• /
• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• 센서학회지
• /
• 제5권4호
• /
• pp.41-46
• /
• 1996

변압기 절연유중 용존수소를 감지하기 위해 Pd/Pt 게이트 MISFET 센서를 제조하고 그 특성을 조사하였다. 동일 칩안에 내장형 히터와 온도측정용 다이오드를 제조하고 MISFET의 전압 드리프트를 줄이기 위해 차동형구조로 하였다. 수소유입 드리프트를 줄이기 위해, 양쪽 FET의 게이트 절연층을 실리콘 산화막과 실리콘 질화막의 2중 구조로 하였다. 수소감지막의 블리스터를 줄이기 위해 Pd/Pt 2중 금속층을 증착하였다. 제조된 센서의 변압기 절연유에 대한 수소감지 특성은 40mV/10ppm 감도와 0.14mV/day 안정도를 보였다.

• 전자공학회논문지SC
• /
• 제44권1호
• /
• pp.19-24
• /
• 2007

본 논문에서는 주파수 영역뿐만 아니라 시간 영역의 설계 사양을 만족할 수 있는 PID-PD 제어기 동조 방법을 제안한다. 제안한 PID-PD 제어기 동조 방법은 PID 제어기와 PI-PD 제어기를 경계로 볼록형 집합을 형성하도록 선정한다. PID-PD 제어기는 PID 제어기와 PI-PD 제어기 각각에 의한 계단 응답과 보드 선도의 이득 사이에 위치하는 응답을 제어한다. 최적 동조 방법에 의해 센서 잡음 저감도 및 안정 강인성을 변수로 하는 가격함수를 최소화하는 제어기를 설계한다. 제안된 제어기의 유용성을 사례 연구와 분석을 통해 검토한다.

• 센서학회지
• /
• 제21권4호
• /
• pp.283-286
• /
• 2012

This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.

• 센서학회지
• /
• 제8권6호
• /
• pp.448-453
• /
• 1999

Pd-SiC 쇼트키 다이오드를 이용한 수소 가스 센서를 개발하였다. Pd-SiC 쇼트키 다이오드의 수소 가스 감지특성을 I-V 및 ${\Delta}I$-t 분석을 통하여 수소 농도와 온도 함수로서 분석하였다. 또한, 수소 흡착에 의한 Pd-SiC 쇼트키 다이오드의 장벽 높이의 변화를 조사하였다. 수소 원자의 흡착이 다이오드의 장벽 높이의 변화와 관계되는 것을 I-V 분석을 이용하여 정상 상태에서의 가스 반응 속도론에 의하여 확인하였다.