• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.553-554
• /
• 2006

In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.5
• /
• pp.521-524
• /
• 2015

This letter presents a selective wireless power transfer architecture using a reconfigurable multi-port amplifier. The proposed wireless power transfer architecture is composed of a phase shifter part controlled by FPGA, two class-E power amplifiers, a four-port power combiner and two coil loads. Depending on the phase control of FPGA, the power ratio of outputs at the two coil loads becomes 1:1, 2:0 and 0:2. The manufactured system has delivered 1W DC power to loads at 125 kHz. The total DC-to-DC conversion efficiency shows more than 40 % including PA efficiency of 79 %.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.4
• /
• pp.257-265
• /
• 2009

Recent progress in development of CMOS power amplifiers for mobile terminals is reviewed, focusing first on switching mode power amplifiers, which are used for transmitters with constant envelope modulation and polar transmitters. Then, various transmission line transformers are evaluated. Finally, linear power amplifiers, and linearization techniques, are discussed. Although CMOS devices are less linear than other devices, additional functions can be easily integrated with CMOS power amplifiersin the same IC. Therefore, CMOS power amplifiers are expected to have potential applications after various linearity and efficiency enhancement techniques are used.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.4
• /
• pp.356-362
• /
• 2003

In this paper, we propose a predistortion technique which uses a novel combination of the second harmonic technique and the difference frequency technique to achieve independent control of the 3rd and 5th order intermodulation products generated by the PA. The second harmonic and difference frequency terms are generated using an envelope detector and two frequency multipliers. The RF predistorter has capability to independently control of the 3rd and 5th order intermodulation products so that high power amplifier is optimized for linear characteristics. From the measurement results, over the frequency band 2137.5 MHz to 2142.5 MHz, ACPR reduction of 11 dB is obtained for a single 30 dBm W-CDMA carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.9
• /
• pp.897-903
• /
• 2011

This paper presents a highly linear power amplifier MMIC, having an output power level of about 1 watt, based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology for the 900 MHz band. The active bias circuit is applied to minimize the effect of temperature variation. Ballast resistors are optimized to prevent a current collapse and a thermal runaway. The fabricated power amplifier exhibited a gain of 17.6 dB, an output P1dB of 30 dBm, and a PAE of 44.9 % at an output P1dB from the one-tone excitation. It also showed a very high OIP3 of 47.3 dBm at an average output power of 20 dBm from the two-tone excitation.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.5
• /
• pp.1120-1128
• /
• 2004

In this paper, we has designed and implemented Up-converter for K-band with high IMD3 performance using balanced power amplifier. It is consisted of PA module and, Local Oscillator module with reject Filter, mixer module and If block, and Up-converter has a local loop path to decide whether it operate or not and has the sensing port to inspect output power level. According to the power budget of designed Up-converter, K-band balanced power amplifier was fabricated by commercial MMIC. Measurement results of up-converter show about 40dB Gain, PldB of 29dBm and OIP3 was 38.25dBm, that is good performance compared to power budgets. We has adjusted gate voltage of MMIC to control more than 30 dB gain. This up-converter was used in transceiver for PTP and PTMP, and applied to digital communication system that use QAM and QPSK modulation.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.3
• /
• pp.136-145
• /
• 2006

Two major processing technologies of GaAs HBT and pHEMT have been released in production at Win Semiconductors corp. to address the strong demands of power amplifiers and switches for both handset and WLAN communications markets. Excellent performance with low processing cost and die shrinkage features is reported from the manufactured MMICs. With the stringent tighter manufacturing quality control WIN has successfully become one of the major pure open foundry house to serve the communication industries. The advancing of both technologies to include E/D-pHEMTs and BiHEMTs likes for multifunctional integration of PA, LNA, switch and logics is also highlighted.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.19 no.11
• /
• pp.1254-1264
• /
• 2008

This paper suggests an extended memory polynomial model that improves accuracy in modeling memory effects of RF power amplifiers(PAs), and verifies effectiveness of the suggested method. The extended memory polynomial model includes cross-terms that are products of input terms that have different delay values to improve the limited accuracy of basic memory polynomial model that includes the diagonal terms of Volterra kernels. The complexity of the memoryless model, memory polynomial model, and the suggested model are compared. The extended memory polynomial model is represented with a matrix equation, and the Volterra kernels are extracted using least square method. In addition, the structure of digital predistorter and digital signal processing(DSP) algorithm based on the suggested model and indirect learning method are proposed to implement a digital predistortion linearization. To verify the suggested model, the predicted output of the model is compared with the measured output for a 10W GaN HEMT RF PA and 30 W LDMOS RF PA using 2.3 GHz WiBro input signal, and adjacent-channel power ratio(ACPR) performance with the proposed digital predistortion is measured. The proposed model increases model accuracy for the PAs, and improves the linearization performance by reducing ACPR.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.17 no.5 s.108
• /
• pp.408-415
• /
• 2006

This paper suggests an improved system-level model of RF power amplifiers(PAs) including memory effects, and validates the suggested model by analyzing the power spectral density of the output signal with a predistortion linearizer. The original three-box(Wiener-Hammerstein) model uses input and output filters to capture RF frequency response of PAs. The adjacent spectral regrowth that occurs in three-box model can be perfectly removed by Hammerstein structure predistorter. However, the predistorter based on Hammerstein structure achieves limited performance in real PA applications due to other memory effects except RF frequency response. The spectrum of the output signal can be predicted accurately using the suggested model that changes a memoryless block in a three-box model with a memory polynomial. The proposed model accurately predicts the output spectrum density of PA with Hammerstein structure predistorter with less than 2 dB errors over ${\pm}30$ MHz adjacent channel ranges for IEEE 802.11 g WLAN signal.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.10 no.5
• /
• pp.663-671
• /
• 1999

The linearity of the GaAs FET power amplifier(PA) is greatly influenced by source and load impedance for the FETs. The third order intermodulation products, IM3, from the GaAs FET PA are investigated in relation with source and load impedance. From heuristic as well as analytic point of view, e.g., Volterra series analysis, is employed to analyze the effects of nonlinear circuit elements, gate-source capacitance, $C_{gs}$, and drain-source current, $I_{ds}$. The sweet spots where soure and load impedance produce the least intermodulation products are calculated and compared with the load and source pull data with good agreements. It also shows that source impedance has a greater effect on the intermodulation products than the load impedcnce.