Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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77 GHz Power Amplifier MMIC by 120nm InAlAs/InGaAs Metamorphic HEMT

MMIC by 120nm InAlAs/InGaAs Metamorphic HEMT를 이용한 77 GHz 전력 증폭기 제작

  • Kim, Sung-Won (School of Electrical Engineering Seoul National University) ;
  • Seol, Gyung-Sun (School of Electrical Engineering Seoul National University) ;
  • Kim, Kyoung-Woon (School of Electrical Engineering Seoul National University) ;
  • Choi, Woo-Yeol (School of Electrical Engineering Seoul National University) ;
  • Kwon, Young-Woo (School of Electrical Engineering Seoul National University) ;
  • Seo, Kwang-Seok (School of Electrical Engineering Seoul National University)
  • 김성원 (서울대학교 전기공학부) ;
  • 설경선 (서울대학교 전기공학부) ;
  • 김경운 (서울대학교 전기공학부) ;
  • 최우열 (서울대학교 전기공학부) ;
  • 권영우 (서울대학교 전기공학부) ;
  • 서광석 (서울대학교 전기공학부)
  • Published : 2006.06.21
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Abstract

In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.

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