• Title/Summary/Keyword: P-pillar

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Morphological and Biochemical Characterization of the Chorion in Interspecific Hybrid Between Bombyx mori and Bombyx mandarina (집누에(Bombyx mori)와 멧누에(Bombyx mandayina)의 종간교잡에 있어서 란각구조 및 Chorion 단백질)

  • 김종길;노시갑
    • Journal of Sericultural and Entomological Science
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    • v.36 no.1
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    • pp.30-36
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    • 1994
  • choChorion(egg-shell) morphology of the F1 hybrid between Bombyx mori and Bombyx mandarina has been observed by scanning electrom microscope and chorion protein was analyzed by electrophoresis. The chorion surface structure of F1 hybrids in the lateral(flat) region was similar to that of maternal line. The F1 hybrids chorion was found to have basically a three layer structure. The middle and inner layer were very much like those of the Bombyx mandarina and Bombyx mori. There were many conic pillar structures in the outer layer of the F1 hybrid, which was similar to Bombyx mandarina. This conic pillar structure had a thin cover layer was more clear in the dorsal and ventral side of the F1 hybrid chorion. The conic pillar structure of Bombyx mandarina was found to be dominant in F1 hybrid chorion irrespective of their maternal line. Major components of chorion protein were analyzed by two-dimensional electrophoresis and found to have isoelectric points in the range of pH 4.0-6.5 and molecular weight 10 to 50 kd. F1 hybrid chorion protein components related directly to those of the maternal line. The conic pillar structure was dominat characteristic and it was present in all F1 hybrid.

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Study on Latch Up Characteristics of Super Junction MOSFET According to Trench Etch Angle (Trench 식각각도에 따른 Super Juction MOSFET의 래치 업 특성에 관한 연구)

  • Chung, Hun Suk;Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.9
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    • pp.551-554
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    • 2014
  • This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was $90^{\circ}$, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.

Optimal Process Design of Super Junction MOSFET (Super Juction MOSFET의 공정 설계 최적화에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.8
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    • pp.501-504
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    • 2014
  • This paper was developed and described core-process to implement low on resistance which was the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation, SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process was similar to genral planar MOSFET, so the process was the same as the general planar MOSFET. And then to develop deep trench process which was main process of the whole process, after finishing photo mask process, we developed deep trench process. We expected that developed process was necessary to develop SJ MOSFET for automobile semiconductor.

Electrical characteristics of the multi-result MOSFET (Multi result MOSFET의 에피층 농도에 따른 전기적 특성분석)

  • Kim, Hyoung-Woo;Kim, Sang-Cheol;S대, Kil-Soo;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.365-368
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    • 2004
  • Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.

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Developing of Super Junction MOSFET According to Charge Imbalance Effect (전하 불균형 효과를 고려한 Super Junction MOSFET 개발에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.10
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    • pp.613-617
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    • 2014
  • This paper was analyzed electrical characteristics of super junction power MOSFET considering to charge imbalance. We extracted optimal design and process parameter at -15% of charge imbalance. Considering extracted design and process parameters, we fabricated super junction MOSFET and analyzed electrical characteristics. We obtained 600~650 V breakdown voltage, $224{\sim}240m{\Omega}$ on resistance. This paper was showed superior on resistance of super junction MOSFET. We can use for automobile industry.

Fabrication of Ordered One-Dimensional Silicon Structures and Radial p-n Junction Solar Cell

  • Kim, Jae-Hyun;Baek, Seong-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.86-86
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    • 2012
  • The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

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Counter-Piracy Cooperation to Strengthen New Southern Policy's "Peace": An Analysis of ROK and ASEAN's Counter-Piracy Practices (신남방정책의 "평화"를 강화하기 위한 해적행위 대응 협력: 한국과 아세안의 해적행위 대응 관행 분석)

  • Boo, Yerin;Kim, Sujin;Yeo, Mathew Jie Sheng
    • Maritime Security
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    • v.3 no.1
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    • pp.141-185
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    • 2021
  • The growing U.S.-China rivalry has placed the countries of Southeast Asia in exceedingly precarious positions. The Republic of Korea (ROK) likewise has been tasked with the challenge of "navigating the waters" between deepening geopolitical divides. It is in this context that the "New Southern Policy" (hereafter NSP) has become a key word in Korea's foreign policy circles. Through NSP, ROK aims to diversify its economic and security interests by strengthening ties with its southern partners, focusing on three key areas (termed as the "3 Ps"): People, Prosperity, and Peace. At the same time, the NSP seeks cooperation with other key diplomatic agendas such as the U.S.'s "Free and Open Indo-Pacific," rendering it crucial for the overall stability of the region. Considering such strategic significance, deeper analysis of the policy is more timely than ever. A brief assessment of the policy's outcome so far, however, reveals that relatively, the "Peace" pillar has been insufficient in achieving satisfactory outcomes. Here, this paper asks the question of: 1) How can the "Peace" pillar of South Korea's New Southern Policy be strengthened? Based on an analysis on the causes of the "Peace" pillar's weakness, this paper identifies counter-piracy cooperation as a solution. This paper then proceeds to answer the next question of: 2) How can ROK and ASEAN cooperate on counter-piracy, and how can these efforts be integrated into ROK's NSP? To answer the above question, this paper conducts in-depth case studies on ASEAN's and ROK's approaches to counter-piracy and identifies specific mechanisms of cooperation. In Chapter I, the paper begins with an overview of the NSP's strategic significance and an evaluation of its "Peace" pillar. Chapter II conducts a literature review on the causes of, and prescriptions for, the weakness of the "Peace" pillar. The paper then justifies why counter-piracy may be a solution. Chapter III examines ASEAN's and ROK's approaches to counter-piracy. By analyzing the general framework and each region's cases, the paper displays the strengths and weaknesses of each region's piracy responses. Based on this analysis, Chapter IV suggests ways to incorporate counter-piracy cooperation into the "Peace" pillar of the NSP. This research bears significance in that it identifies a specific area of cooperation (counter-piracy) to strengthen the "Peace" pillar of ROK's NSP. Such identification is based on a comprehensive study into the two parties' past and current experience in counter-piracy, making it contextual in nature. Furthermore, the study suggests practical mechanisms of cooperation, and considers ways of incorporation into the existing framework of NSP. This approach differs from existing literature that failed to generate case-specific, policy-oriented solutions. The COVID-19 pandemic has exacerbated piracy issues and deepened geopolitical divides. Turbulent seas such as these call for careful navigation. When it comes to promoting "peace," the key lies in combating the pirates that sail those very waters.

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A Study on Eye Point and Field of View of Older Drivers (고령운전자의 Eye Point와 전방 시계 특성에 관한 연구)

  • Lee, Seong-Il;Choi, Ji-Ho;Hwang, In-Jun;Song, Kyo-Hyun
    • Journal of the Ergonomics Society of Korea
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    • v.29 no.1
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    • pp.67-71
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    • 2010
  • This study examined the field of view of older drivers based on their eye points. The subjects were 25 people whose age was over 65 years and 10 contrasting subjects on their 20s. For the experiment, we expanded the width of the A-pillar of a test vehicle. With a measuring apparatus designed for the study, we analyzed 3 axes of coordinates from glabella to a fixed point of the vehicle that would be used as CAD data of vehicle design. Result shows that average eye point of the older subjects was located significantly farther from the seat than that of the 20s approximately by 31.62mm(p=0.05). It was also found that the Binocular FOV was not significantly different between the older subjects and the 20s(p=0.85), and the effect of the width of the A-pillar on the FOV could not be found. We also measured the left and right side of the Ambinocular FOV of the older subjects. It was found that the older subjects had much wider visual angle than the 20s by 2.84 degree (F=4.78, p=0.01) on the left side, while the 20s showed significantly wider average angle than the older subjects by about 4.88 degree (F=4.78, p<0.05) on the right side. The results of this study can be used to improve the FOV based on the optimal eye points when designing a vehicle for older drivers.

A Study on the Charge Balance Characteristics of Super Junction MOSFET with Deep-Trench Technology (Deep-Trench 기술을 적용한 Super Junction MOSFET의 Charge Balance 특성에 관한 연구)

  • Choi, Jong-Mun;Huh, Yoon-Young;Cheong, Heon-Seok;Kang, Ey-Goo
    • Journal of IKEEE
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    • v.25 no.2
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    • pp.356-361
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    • 2021
  • Super Junction structure is the proposed structure to minimize the Trade-off phenomenon of power devices. Super Junction can have On-resistance(Ron) characteristics as less as five times than conventional structure. There are process methods that Multi-Epi and Deep-Trench of Super Junction structure. The reason for this is that Deep-Trench process is known to be a relatively difficult manufacturing method because it is easy to form a P-Pillar by burying impurities on top of a silicon substrate through a Deep-Trench process. However, the structure created by the Deep-Trench process has low On-resistance and high breakdown voltage, showing better efficiency. In this paper, we suggested a novel method in the process and designed structure with Charge Balance theory.