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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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A Study on the Charge Balance Characteristics of Super Junction MOSFET with Deep-Trench Technology

Deep-Trench 기술을 적용한 Super Junction MOSFET의 Charge Balance 특성에 관한 연구

  • Received : 2021.05.17
  • Accepted : 2021.06.25
  • Published : 2021.06.30
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Abstract

Super Junction structure is the proposed structure to minimize the Trade-off phenomenon of power devices. Super Junction can have On-resistance(Ron) characteristics as less as five times than conventional structure. There are process methods that Multi-Epi and Deep-Trench of Super Junction structure. The reason for this is that Deep-Trench process is known to be a relatively difficult manufacturing method because it is easy to form a P-Pillar by burying impurities on top of a silicon substrate through a Deep-Trench process. However, the structure created by the Deep-Trench process has low On-resistance and high breakdown voltage, showing better efficiency. In this paper, we suggested a novel method in the process and designed structure with Charge Balance theory.

파워 소자의 트레이드오프 현상을 최소화하기 위해 제시된 구조가 Super Junction 구조이다. Super Junction은 기존의 많이 사용하던 기본 구조 대비 1/5 정도의 낮은 온 저항(Ron) 특성을 가질 수 있다. Super Junction 구조의 공정 방법으로 Multi-Epi 공정과 Deep-Trench 공정 방법이 있다. Deep-Trench 공정은 실리콘 기판 상면에 깊은 트렌치 공정을 통하여 그안에 불순물이 도핑 되어 있는 폴리실리콘을 매립하여 P-Pillar를 형성 시키는 공정 방법이라 매립하는 과정에서 결함이 형성되기 쉬워서 비교적 어려운 제조 방법으로 알려져 있다. 하지만 비교적 Deep-Trench 공정으로 만들어진 구조가 낮은 온저항과 높은 항복 전압을 형성하여 좋은 효율을 보인다. 본 논문에서는 공정상의 새로운 방법을 제시하고, Charge Balance 이론을 접목시킨 구조를 설계하였다.

Keywords

Acknowledgement

This research was supported by Korea Institute of Energy Technology Evaluation and Planning (20194010201810 and 2019). / Global Cooperation on Innovative Graduate Student Engineers on Power Semiconductors for Renewable Energy and Intelligent Power System(20194010000050)

References

  1. Lee, Geon Hee, Byoung Sup Ahn, and Ey Goo Kang. "Analysis of Electrical Characteristics According to the Pillar Spacing of 4.5 kV Super Junction IGBT," Journal of the Korean Institute of Electrical and Electronic Material Engineers, 33. no.3, pp.173-176, 2020. DOI: 10.4313/JKEM.2020.33.3.173
  2. Kang, Ey Goo. "Optimal Process Design of Super Junction MOSFET," Journal of the Korean Institute of Electrical and Electronic Material Engineers, Vol.27. no.8, pp.501-504, 2014. https://doi.org/10.4313/JKEM.2014.27.8.501
  3. Lee, Jung-Hoon, Eun-Sik Jung, and Ey-Goo Kang. "A Study on 600 V Super Junction Power MOSFET Optimization and Characterization Using the Deep Trench Filling," Journal of the Korean Institute of Electrical and Electronic Material Engineers, Vol.25, no.4, pp.270-275, 2012. DOI: 10.4313/JKEM.2012.25.4.270
  4. J. M. Geum, "A study on the optimization of trenchetch and ion implantation designing SiC super junction MOSFET," Dissertation, Korea University, 2016.
  5. Kang, Ey Goo. "Developing of Super Junction MOSFET According to Charge Imbalance Effect." Journal of the Korean Institute of Electrical and Electronic Material Engineers, Vol.27. no.10, pp.613-617, 2014. DOI: 10.4313/JKEM.2014.27.10.613
  6. Kang, Ey Goo. "Electrical Characteristics of Super Junction MOSFET According to Trench Etch Angle of P-pillar," Journal of the Korean Institute of Electrical and Electronic Material Engineers, Vol.27. no.8, pp.497-500, 2014. https://doi.org/10.4313/JKEM.2014.27.8.497