• Korean Journal of Materials Research
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• v.19 no.8
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• pp.443-446
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• 2009

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO) as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based lightemitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beam evaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers were in excess of 80% throughout the visible region of the spectrum. Specific contact resistances of $3.4\times10^{-4}$, $1.2\times10^{-4}$, $9.2\times0^{-5}$, and $3.6\times10^{-5}{\Omega}{\cdot}cm^2$ for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. The forward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15 V lower and was increased by 38.9%, respectively, at a forward current of 20 mA compared to that of a standard GaN LED with an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.1-6
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• 2005

In this study we investigate the electronic structure and magnetism of transition metal (TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag ) deped ZnO($TM_{0.25}Zn_{0.75}O$), which are expected to have Curie temperature. Full-potential Linearized Augmented Plane Wave(FLAPW) metod is adopted with exchange-correlation potential expressed as general gradient approximation(GGA). The calculated magnetic moments of ($TM_{0.25}Zn_{0.75}O$) are 0.83, 3.03, 4.03, 3.48, 2.47, 1.56, 0.43, 0.75, 0.01 ${\mu}_B$ for TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag, respectively. The nearest neighbor O atom to the transition metal is calculated to have a significant magnetic moment of about 0.1${\mu}_B$, ?? 새 strong hybridization between O-p and TM-d bands. As the results, the systems may have larger magnetic moments in total, compared to the corresponding isolated atoms. The 3d TM doped systems exhibit the half-metallic character except Co, wheres the 4d TM doped systems behave like normal metals and low spin polarization at the Fermi levels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.177-177
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• 2007

ZnO는 3.36eV의 넓은 밴드캡을 가지는 II-IV족 반도체로써 태양전지, LED와 같은 광학적 소자로 이용이 기대가 되는 물질이다. 더욱이, 상온에서의 60meV에 해당하는 큰 엑시톤 에너지와 밴드캡 에지니어링이 가능하다는 장점 때문에 광학적 소자로 널리 이용되고 있는 GaN을 대체할 수 있는 물질로 주목을 받고 있다. 하지만, p-type ZnO는 형성이 어렵고 낮은 이동도와 케리어 농도의 특성을 보이고, 대기 중에 장시간 노출할 경우 n-type ZnO의 특성으로 돌아가는 불안정성을 보이고 있다. 최근에 몇몇의 연구자들에 의해 V족의 원소인 P(phosphorous), N(nitrogen), As(arsenic))를 도핑하여 p-type ZnO의 형성에 대한 논문이 발표되고 있다. 또한, V족 원소 중에 P는 p-type ZnO 형성에 효과적인 도핑 물질로 보고되 고 있다. 본 연구는 마그네트론 스퍼터링을 이용하여 다양한 온도에서 성장된 P도핑 ZnO 박막의 특성에 대해 연구하였다. P도핑된 ZnO 박막은 사파이어 기판에 buffer층을 사용한 Insulator 특성의 ZnO박막위에 400, 500, 600, $700^{\circ}C$에서 성장되 었다. 박막의 특성 분석에는 325nm의 파장을 가지는 He-Cd의 레이져 광원을 사용하여 10K의 저온 PL과 0.5T의 자기장을 사용한 van der Pauw configuration에 의한 Hall effect측정, 그리고 결정성 분석에는 XRD와 TEM을 이용하였다. 상온 Hall-effect 측정 결과, $400{\sim}600^{\circ}C$ 에서 성장된 박막은 n-type의 특성을 보였고, $700^{\circ}C$에서 성장된 Phosphorous 도핑 ZnO박막은 $1.19{\times}10^{17}$의 캐리어 농도를 가지는 p-type의 특성을 보였다. 그리고 XRD분석과 TEM분석을 통하여 박막의 성장온도가 증가 할수록 P도핑된 ZnO박막의 결정성이 향상되는 것을 알 수 있었다. 또한 10K의 저온 PL분석을 통해 p도핑에 의한 액셉터에 관련된 피크들을 관찰할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.238-238
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• 2004

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.109-113
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• 2004

Zn diffusions in InP have been studied by electrochemical capacitance voltage. The InP layer was grown by metal organic chemical vapor deposition, and $Zn_3P_2$ thin film was deposited on the epitaxial substrates. The samples annealed in a rapid thermal annealing. It is demonstrated that surface hole concentration as high as $1\times10^{19}\textrm{cm}^{-3}$ can be achieved. When the Zn diffusion was carried at $550^{\circ}C$ and 5-20 min., the diffusion depth of hole concentration moves from 1.51$\mu\textrm{m}$ to 3.23 $\mu\textrm{m}$, and the diffusion coeffcient of Zn is $5.4\times10^{-11}\textrm{cm}^2$/sec. After activation, the concentration is two orders higher than that of untreated sample at 0.30 $\mu\textrm{m}$ depth. As the annealing time is increase, the hole concentration remains almost constant, except deep depth. It means that excess Zn interstitials exist in the doped region is rapidly diffusion into the undoped region and convert into substitutional When the thickness of $SiO_2$ thin film is above 1,000$\AA$, the hole concentration becomes stable distribution.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.266-267
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• 2009

본 논문에서는 As-doped ZnO 박막의 플라즈마 식각 특성 및 메커니즘에 관하여 실험을 수행하였다. p-type과 n-type ZnO 박막의 실험은 유도 결합 플라즈마 식각 장비(inductively coupled plasma; ICP)를 이용하였고, $CH_4/Ar$ 플라즈마의 가스의 비, RF 전력, DC 바이어스 전압과 공정 압력에 대한 식각 속도의 변화를 관찰 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.170-170
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• 2006

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.359-365
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• 2007

In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.334-337
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• 2017

In this paper, to develop the ceramics with high $d_{33}$ and high $Q_m$ for ultrasonic transducer applications, $0.10Pb(Ni_{1/3}Nb_{2/3})O_3-0.07Pb(Mn_{1/3}Nb_{2/3})O_3-0.83Pb(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ (PNN-PMN-PZT) ceramics were sintered at $940^{\circ}C$ using $CuO-Li_2CO_3-Bi_2O_3$ (CLBO) as a sintering aid by a traditional solid-state technique. The influence of zinc oxide additive on the physical properties of the prepared ceramics were systematically investigated. The R-T (rhombohedral-tetragonal) phase coexistence was found in the ceramics without zinc oxide additive and with increasing amounts of ZnO additive, the specimens showed a tetragonal phase. The formation of a liquid phase between ZnO and $Bi_2O_3$ contributed significantly to the grain growth of specimens. For the 0.1 wt% ZnO ceramics, the optimal physical properties of $d_{33}=370pC/N$, ${\varepsilon}_r=1,344$, $k_p=0.621$, and $Q_m=1,523$ were obtained.

• Current Optics and Photonics
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• v.2 no.1
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• pp.79-84
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• 2018

We present a novel and simple method to enable spatially selective $ZnAl_2O_4$ nanocrystal formation on the surface of $B_2O_3$-$Al_2O_3$-ZnO-CaO-$K_2O$ glass by employing localized laser heating. Optimized precipitation of glass-ceramics containing nanocrystals doped with $Eu^{3+}$ and $Yb^{3+}$ ions was performed by controlling $CO_2$ laser power and scan speed. Micro-x-ray diffraction and transmission electron microscopy revealed the mean size and morphology of nanocrystals, and energy dispersive x-ray spectroscopy showed the lateral distribution of elements in the imaged area. Laser power and scan speed controled annealing temperature for crystalization in the range of 1.4-1.8 W and 0.01-0.3 mm/s, and changed the size of nanocrystals and distribution of dopant ions. We also report more than 20 times enhanced downshift visible emission under ultraviolet excitation, and 3 times increased upconversion emission from $Eu^{3+}$ ions assisted by efficient sensitizer $Yb^{3+}$ ions in nanocrystals under 980 nm excitation. The confocal microscope revealed the depth profile of $Eu^{3+}$ ions by showing their emission intensity variation.