• Food Science and Preservation
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• v.17 no.4
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• pp.451-456
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• 2010

We investigated changes in the quality of pulp-containing apple juice, during storage, after addition of various amounts of vitamin C, which was stable over time. Neither sugar content nor acidity level varied when vitamin C was added. The pH was slightly lower (pH 4.29-4.30) in juice with added vitamin C than in unsupplemented juice (pH 4.40). The L and b color values fell as vitamin C content rose and the storage period was extended. In sensory evaluation tests, taste and overall acceptability were higher for juice to which vitamin C had been added to 0.02% (w/v) than for unsupplemented juice. Vitamin C levels fell less during storage at $4^{\circ}C$ than at higher temperatures. The alcohol-soluble color (ASC) value fell as the amount of added vitamin C rose, and tended to be lower when juice was stored at $4^{\circ}C$ compared to $37^{\circ}C$. In summary, apple juice containing pulp was optimally stored at $4^{\circ}C$ after addition of 0.02% (w/v) vitamin C

• Journal of the Korean Society of Food Science and Nutrition
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• v.40 no.7
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• pp.942-948
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• 2011

The physiological activities of extracts from the leaf, stem, and fruit of Cudrania tricuspidata were investigated. The electron-donating ability (EDA) of the 70% (v/v) ethanolic extract of stem was 90.20%; this was the highest value of all the extracts tested and higher than the L-ascorbate solutions. The total polyphenol contents were the highest in the leaf extracts under all extraction conditions. Especially, 70% (v/v) methanolic extract of leaf contained the highest total polyphenol content of 224.48 mg%. SOD-like activity showed the highest activity in water extract of leaf at 64.53%. Tyrosinase-inhibitory activities were the most effective in all extracts of fruit. ACE inhibitory activities were the highest in water extract of fruit. Nitrite-scavenging abilities under acidic conditions (pH 1.2 and pH 3.0) were the most effective in all the extracts. The results of this study will be useful for understanding the physiological activities of Cudrania tricuspidata extracts.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1673-1678
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• 2013

Lumazine protein is a member of the riboflavin synthase superfamily and the intense fluorescence is caused by non-covalently bound to 6,7-dimethyl 8-ribityllumazine. To figure out the binding modes and the structure of the N-terminal domain of lumazine protein, the wild type of protein extending to amino acid 118 (N-LumP 118 Wt) and mutants of N-LumP 118 V41W, S48W, T50W, D64W, and A66W from Photobacterium leiognathi were purified. The biochemical properties of the wild type and mutants of N-LumP 118 proteins were analyzed by absorbance and fluorescence spectroscope. The peak of absorbance and fluorescence of lumazine ligand were shifted to longer wavelength on binding to N-LumPs. The observed absorbance value at 410 nm of lumazine bound to N-LumP 118 proteins indicate that one mole of N-LumP 118 proteins bind to one mole of ligand of lumazine. Fluorescence analysis show that the maximum peak of fluorescence of N-LumP S48W was shifted to the longest wavelength by binding with 6,7-dimethyl 8-ribityllumazine and was shown to the greatest quench effect by acrylamide among all tryptophan mutants.

• Asian-Australasian Journal of Animal Sciences
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• v.26 no.1
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• pp.128-133
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• 2013

The objective of the study was to determine the effect of Acacia karroo supplementation on growth, ultimate pH, colour and cooking losses of meat from indigenous Xhosa lop-eared goats. Eighteen castrated 4-month-old kids were used in the study until slaughter. The kids were subdivided in two treatment groups A. karroo supplemented (AK) and non-supplemented (NS). The supplemented goats were given 200 g per head per d of fresh A. karroo leaves. The kids were slaughtered on d 60 and sample cuttings for meat quality assessment were taken from the Longistimus dorsi muscle. The supplemented kids had higher (p<0.05) growth rates than the non-supplemented ones. The meat from the A. karroo supplemented goats had lower (p<0.05) ultimate pH and cooking loss than the meat from the non-supplemented goats. Acacia karroo supplemented goats produced higher (p<0.05) $b^*$ (yellowness) value, but supplementation had no significant effect on $L^*$ (lightness) and $a^*$ (redness) of the meat. Therefore, A. karroo supplementation improved growth performance and the quality of meat from goats.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.1
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• pp.97-103
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• 1995

This paper reports the following two topics : $\circled1$ ozone concentration (O$\sub$3con/) and discharge characteristics in flowing O$\sub$2/ with variation of Re$\sub$3/ at high voltage nozzle (HVN) of HVN 10 type ozonizer. $\circled2$ O$\sub$3con/ with variation of Re$\sub$3/ at HVN of HVN 25 type ozonizer. The important conclusions obtained from this paper are as follows. 1) In HVN 10 type ozonizer : $\circled1$ The discharge pattern can be controlled by adjustment of the Re$\sub$3/. $\circled2$ V$\sub$c/ is inversely proportional to pulse width (P$\sub$w/) and pulse frequency (P$\sub$f) $\circled3$ O$\sub$3con/ increase as decreasing of Re$\sub$3/ for constant P$\sub$w/ and P$\sub$f/. $\circled4$ O$\sub$3con/ increase as decreasing of P$\sub$w/, O$\sub$3con/ is proportional to P$\sub$f/. 2) In HVN 25 type ozonizer : O$\sub$3con/ of HVN 25 type ozonizer can increase than that of HVN 10 type ozonizer, according to parallel circuit of applied voltage and serial of supplied gas. As a result, we can obtain O$\sub$3con/ of 825[ppm] as the maximun value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.70-73
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• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1025-1028
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• 2005

Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.475-478
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• 1995

The variations of cold gas properties such as density, pressure, temperature and velocity which are dependent each other are closely related with the dielectric recovery of an interrupter. So, the pressure-rises at no-load in the puffer cylinder and in front of fixed arcing contact of 800kV model interrupter were measured experimentally using pressure transducers of strain gage type and semiconducting type, respectively. The maximum value of pressure-rise in the puffer cylinder increased almost linearly from 7.6 bar at the minimum operated pressure to 9.7 bar at the maximum operated pressure, while the pressure-rise in front of fixed arcing contact was independent with the operated pressure. The measured values will be utilized in verifying the self-developed cold flow analysis program and as an input of commercialized CFD program package.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.106-110
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• 1998

The $LiNbO_3$ thin films were prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. RTA(Rapid Thermal Annealing) treatment was performed for as-deposited films in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric $LiNbO_3$ film was increased from a typical value of $1{\sim}2{\times}10^8{\Omega}{\cdot}cm$ before the annealing to about $1{\times}10^{13}{\Omega}{\cdot}cm$ at 500 kV/cm and reduced the interface state density of the $LiNbO_3/Si$ (100) interface to about $1{\times}10^{11}/cm^2{\cdot}eV$. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization ($P_r$) and coercive field ($E_c$) values of about 1.2 ${\mu}C/cm^2$ and 120 kV/cm, respectively.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.909-915
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• 1997

To improve the electro-induced strain and to decease the hysteresis of that W $O_3$dopant of which amount is 0~0.8wt% was added to (P $b_{0.73}$/B $a_{0.27}$)(Z $r_{0.75}$/ $Ti_{0.25}$) $O_3$+0.1wt% $Y_{2}$/ $O_3$ceramics. At the specimen with 0.4 wt% W $O_3$the electromechanical coupling coefficient( $K_{31}$ ) showed the maximum value of 23.6% at D.C 10 kV/cm electric field. At the same W $O_3$addition amount the piezoelectric constant( $d_{31}$ ) and the electro-induced strain($\Delta$$\ell$/$\ell$)showed the highest values of 182$\times$10$^{-12}$ [C/N] 210$\times$10$^{-6}$ $\Delta$$\ell$/$\ell$at D.C. 10 kV/cm electric field. respectively0 kV/cm electric field. respectivelyvely.