• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.72-73
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.81-82
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.20-20
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.60-60
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• 2002

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.200-206
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• 1997

Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.195-200
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• 2013

Novel Sr-Y-Si-Oxynitride yellow phosphors were synthesized and the effect of calcination temperature, reduction temperature and $Eu^{2+}$ concentration on their luminescence properties were studied. Optimal temperature conditions were found to be $1400^{\circ}C$ and $1300^{\circ}C$ for solid-state reaction and reduction, respectively. The synthesized $Ba_9Y_{2+y}Si_6O_{24-3y}N_{3y}:Eu^{2+}$ phosphors showed a single intense broadband emission in the range of 571~587 nm for 450 nm excitation light source. The highest luminescence intensity was obtained with Eu concentration of 3 mol% and concentration quenching was observed beyond 5 mol%. FE-SEM and PSA showed that the synthesized phosphors consists of particles with an average size of ${\sim}8.2{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.42 no.3 s.274
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• pp.178-181
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• 2005

Silicon oxynitride (SiON) layers deposited upon a $SiO_2/Si$ buffer layer placed upon silicon wafers have been obtained by using PECVD from $SiH_4,\;N_2O$, and $N_2$. It can be seen that the refractive index, measured by using a prism coupler, for the SiON films can be varied between 1.4480 and 1.4958 at a wavelength of 1552 nm by changing the process parameters. Optical planar waveguides with a thickness of $6{\mu}m$ and a refractive index contrast ($\Delta$n) of $0.36\% have been deposited. Also, etching experiments were performed using ICP dry etching equipment on thick SiON films grown onto Si substrates covered by a thick $SiO_2$ buffer layer. A polarization maintaining single-mode fiber was used for the input and a microscope objective for the output at $1.55{\mu}m$. As a result, a low index contrast SiON based waveguide is fabricated with easily adjustable refractive index of core layer. It illustrates that the output intensity mode is a waveguiding single-mode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.68-73
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• 2006

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

• Journal of IKEEE
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• v.22 no.3
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• pp.706-711
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• 2018

In this work, we have investigated the characteristics of 4H-SiC metal-oxide-semiconductor (MOS) devices with silicon oxynitride (SiON) insulator using plasma enhanced chemical vapor deposition (PECVD). After post metallization annealing, the trap densities of the fabricated devices decreased significantly. In particular, the device annealed at $500^{\circ}C$ in forming gas ambient exhibited excellent MOS characteristics along with negligible hysteresis, which proved the potential of PECVD SiON as an alternative gate insulator for use in 4H-SiC MOS device.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.233-237
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• 2015

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.