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http://dx.doi.org/10.4191/KCERS.2005.42.3.178

Low Index Contrast Planar SiON Waveguides Deposited by PECVD  

Kim, Yong-Tak (Department of Advanced Materials Engineering, Sungkyunkwan University)
Yoon, Seok-Gyu (Department of Advanced Materials Engineering, Sungkyunkwan University)
Yoon, Dae-Ho (Department of Advanced Materials Engineering, Sungkyunkwan University)
Publication Information
Journal of the Korean Ceramic Society / v.42, no.3, 2005 , pp. 178-181 More about this Journal
Abstract
Silicon oxynitride (SiON) layers deposited upon a $SiO_2/Si$ buffer layer placed upon silicon wafers have been obtained by using PECVD from $SiH_4,\;N_2O$, and $N_2$. It can be seen that the refractive index, measured by using a prism coupler, for the SiON films can be varied between 1.4480 and 1.4958 at a wavelength of 1552 nm by changing the process parameters. Optical planar waveguides with a thickness of $6{\mu}m$ and a refractive index contrast ($\Delta$n) of $0.36\% have been deposited. Also, etching experiments were performed using ICP dry etching equipment on thick SiON films grown onto Si substrates covered by a thick $SiO_2$ buffer layer. A polarization maintaining single-mode fiber was used for the input and a microscope objective for the output at $1.55{\mu}m$. As a result, a low index contrast SiON based waveguide is fabricated with easily adjustable refractive index of core layer. It illustrates that the output intensity mode is a waveguiding single-mode.
Keywords
PECVD; Silicon oxynitride; Single-mode; Annealing;
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Times Cited By KSCI : 1  (Citation Analysis)
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