• Korean Journal of Materials Research
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• v.27 no.2
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• pp.119-126
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• 2017

WC-CrC-Ni coatings were prepared by nine processes of the Taguchi program with three levels for the four spray parameters: spray distance, flow rates of hydrogen and oxygen, and powder feed rate. The optimal coating process (OCP) was oxygen flow rate of 38 FMR, hydrogen flow rate of 53 FMR, powder feed rate of 25 g/min, and spray distance of 7 inches. Hardness of 1150 Hv and porosity of 1.2 %, were obtained by OCP; these are better results compared with the highest 1033 Hv and the lowest 1.5 % porosity obtained by nine processes of the Taguchi program. Friction coefficient of the WC-CrC-Ni coating decreased from $0.36{\pm}0.07$ at $25^{\circ}C$ to $0.23{\pm}0.07$ at $450^{\circ}C$. These values were smaller than those of the EHC (electrolytic hard chrome) plating at both temperatures due to lubrication from the oxide debris. The wear trace and wear depth of the coating are smaller than those of the EHC at both temperatures. Pitting was not found in the WC-CrC-Ni coating sample, while it did appear in the EHC sample.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.79-83
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• 2009

In this study, the characteristics of amorphous silicon etching for the formation of gate electrodes have been evaluated at the variation of several process parameters. When total flow rates composed of $Cl_2/HBr/O_2$ gas mixtures increased, the etch rate of amorphous silicon layer increased, but critical dimension (CD) bias was not notably changed regardless of total flow rate. As the amount of HBr in the mixture gas became larger, amorphous silicon etch rate was reduced by the low reactivity of Br species. In the case of increasing oxygen flow rate, etch selectivity was increased due to the reduction of oxide etch rate, enhancing the stability of silicon gate etching process. However, gate electrodes became more sloped according to the increase of oxygen flow rate. Higher source power induced the increase of amorphous silicon etch rate and CD bias, and higher bias power had a tendency to increase the etch rate of amorphous silicon and oxide.

• Journal of The Korean Society of Clinical Toxicology
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• v.17 no.2
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• pp.102-107
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• 2019

Purpose: Acute carbon monoxide (CO) poisoning is one of the most common types of poisoning and a major health problem worldwide. Treatment options are limited to normobaric oxygen therapy, administered using a non-rebreather face mask or hyperbaric oxygen. Compared to conventional oxygen therapy, high-flow nasal cannula oxygen (HFNC) creates a positive pressure effect through high-flow rates. The purpose of this human pilot study is to determine the effects of HFNC on the rate of CO clearance from the blood, in patients with mild to moderate CO poisoning. Methods: CO-poisoned patients were administered 100% oxygen from HFNC (flow of 60 L/min). The fraction of COHb (fCOHb) was measured at 30-min intervals until it decreased to under 10%, and the half-life time of fCOHb (fCOHb t_1/2) was subsequently determined. Results: At the time of ED arrival, a total of 10 patients had fCOHb levels ≥10%, with 4 patients ranging between 10% and 50%. The mean rate of fCOHb elimination patterns exhibits logarithmic growth curves that initially increase quickly with time (HFNC equation, Y=0.3388*X+11.67). The mean fCOHbt_1/2 in the HFNC group was determined to be 48.5±12.4 minutes. Conclusion: In patients with mild to moderate CO poisoning, oxygen delivered via high flow nasal cannula is a safe and comfortable method to treat acute CO toxicity, and is effective in reducing the COHb half-life. Our results indicate HFNC to be a promising alternative method of delivering oxygen for CO toxicity. Validating the effectiveness of this method will require larger studies with clinical outcomes.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.182-188
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• 2001

Thin films of $SiO_xC_y$ deposited by means of PECVD(plasma enhanced chemical vapor deposition) using HMDSO(hexamethyldisiloxane)/$O_2$ were characterized. The effects of deposition conditions such as RF power, oxygen flow rate and hydrogen flow rate on the chemical bond structure, atomic composition, surface roughness and wear characteristics of the films were investigated by means of FTIR, XPS, AFM and Hazemeter. The deposition rate of $SiO_xC_y$ was greater than 100 nm/min, which is relatively high rate. The XPS results showed that the carbon content in a deposited film was lower than that of previous studies where different organosilicone materials were used. The optimum wear resistance was attained when RF power was 200 Watt and oxygen flow rate was 100 sccm. This study implies that the $HMDSO/O_2$ system is effective in forming a film with a lower carbon content and good abrasion resistance.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.7-11
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• 2019

We have investigated the effect of the hydrogen flow rate on the characteristics of IZO thin films for the TCO (transparent conducting oxide). For this purpose, IZO thin films are deposited by RF magnetron sputtering at 300℃ with various H₂ flow rate. To investigate the influences of the ambient gases, the flow rate of hydrogen in argon was varied from 0.1 sccm to 1 sccm. The IZO thin films deposited at 300℃ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the crystalline-IZO films deposited at 300℃ and hydrogen gas of 0.8sccm was 3.192×10^-4Ω cm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease. The XPS profiles showed that the number of oxygen vacancy decreased as the hydrogen flow rate increased. The transmittance of the IZO films deposited at 300℃ were showed more than 80%.

• Transactions of the Korean hydrogen and new energy society
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• v.8 no.1
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• pp.5-10
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• 1997

Because of environmental pollution and reserve limitations of fossil fuels, several alternative energies have been developing. One of them, the hydrogen is researched as a highly probable solution. In this study pure hydrogen gas and oxygen gas are burned in combustor to reduce the emission, and a gas turbine is used. Cooling water around the combustor recovers the cooling heat loss to useful work by being expanded from liquid to vapor, being injected into the combustor and making pressure rise with working fluid to get more turbine power. Because pure hydrogen and oxygen are used, there is no carbonic emission such as CO, $CO_2$, HC nor $NO_x$, and $SO_x$. The power is obtained by turbine system, which makes lower noise and vibration than any reciprocating engine. Running of a turbine is searched under various conditions of hydrogen flow rate and water injection rate. Maximum speed of the turbine is obtained when the combustion reaches steady state. It is enable to determine the optimum rate between hydrogen flow and water injection which makes turbine run maximum speed.

• Journal of Korean Tunnelling and Underground Space Association
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• v.18 no.2
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• pp.175-181
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• 2016

In this paper, the liquid air was selected as the refrigerant in artificial ground freezing to be used for rapid ground freezing and to reduce the risk of suffocation and the applicability of liquid air was verified. In order to evaluate the stability of the liquid air, the oxygen concentration of mixtures with liquid nitrogen and liquid oxygen was experimentally examined to meet the oxygen concentration criteria in the Occupational Safety and Health Act. In addition, the effects of the mixture ratio of liquid nitrogen and liquid oxygen, pressure and flow rate change in the storage vessel on the oxygen concentration in the liquid air were investigated. As a result, the ratio of liquid nitrogen and liquid oxygen 8: 2 was shown to meet the oxygen concentration standards. Pressure and flow rate change in the storage vessel did not have significant effects on the oxygen concentration in the liquid air.

• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.91-97
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• 2007

In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.188-192
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• 2018

Surgery to increase cerebral blood flow is one of the treatment methods of cerebral infarction. However, invasive methods, such as surgery, may result in postoperative complications or side effects. In order to supplement this invasive method, non-invasive devices have been introduced that use human blood pressure to pressurize the extremities to increase cerebral blood flow. However, the problem of poor speed and accuracy was raised. In this paper, the perfusion index of each arm was measured by applying pressure to both arms using Blood Oxygen Level Sensor to improve the accuracy of measurement and measurement time. The pressure applied to the arm by 75% of the moment when it falls to the leg and the pressure calculated by using the pressure value obtained from the arm. Like the existing blood pressure measuring cerebral blood flow increasing device, the blood flow can be increased by more than 20% and the measurement time can be shortened, so that it can be selectively used for the patient with cerebral infarction.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.315-319
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• 2014

In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage ($V_{TH}$) under illumination with/without the gate bias, and the amount of shift in $V_{TH}$ is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in $V_{TH}$ under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.