• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1465-1469
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• 2012

For given electrolytes, different behaviors of anodic aluminum oxide (AAO) and anodic titanium oxide (ATO) during electrochemical thinning are explained by ionic and electronic current modes. Branched structures are unavoidably created in AAO since the switch of ionic to electronic current is slow, whereas the barrier oxide in ATO is thinned without formation of the branched structures. In addition, pore opening can be possible in ATO if chemical etching is performed after the thinning process. The thinning was optimized for complete pore opening in ATO and potential-current behavior is interpreted in terms of ionic current-electronic current switching.

• Bulletin of the Korean Chemical Society
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• v.35 no.9
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• pp.2749-2752
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• 2014

Recent studies have shown that single-stranded DNA adsorbed onto graphene oxide is protected from DNase I cleavage. However, double-stranded DNA bound to graphene oxide and could be digested by DNase I. To elucidate whether single-stranded DNA is protect from DNase I in the presence of graphene oxide, this study conducted DNase I digestion using single-stranded DNA and single-stranded DNA containing the duplex region in the presence of graphene oxide. Addition of DNase I resulted in restoration of the fluorescence emission that had been quenched when DNA was adsorbed to graphene oxide. It indicates that DNase I cleaved the adsorbed single-stranded DNA onto graphene oxide, which was sufficient for the detection of DNase I activity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.896-901
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• 2005

The microstructure and electrical properties of praseodymium-based zinc oxide varistors were investigated at various cobalt oxide contents in the range of $0.5{\~}5.0 mol\%$. The ceramic density increased in the range of $5.25{\~}5.55 g/cm^3$ with increasing cobalt oxide content. The varistor doped with cobalt oxide of $1.0 mol\%$ exhibited the highest nonlinearity, with 66.6 in nonlinear exponent and 1.2 $\mu$A in leakage current. The donor concentration, density of interface states, and tamer height were in the range of $(1.06{\~}1.69){\times}10^{18}/cm^3$, $(3.11 {\~}3.56){\times}10^{12}/cm^2$, and 0.80${\~}$1.07 eV, respectively.

• Journal of the Korean Chemical Society
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• v.64 no.2
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• pp.61-66
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• 2020

In this study, we investigate the structural and electronic properties of copper oxide clusters, Cu_nO_n (n = 9 - 15). To find the lowest energy structures of copper oxide clusters, we use ReaxFF and density functional theory calculations. We calculate many initial copper oxide clusters using ReaxFF quickly. Then we calculate the lowest energy structures of copper oxide clusters using B3LYP/LANL2DZ model chemistry. We examine the atomization energies per atom, average bond angles, Bader charges, ionization potentials, and electronic affinities of copper oxide clusters. In addition, the second difference in energies is investigated for relative energies of copper oxide clusters.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4393-4411
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• 2022

In recent years, beryllium oxide has been widely utilized in multiple compact nuclear reactors as the neutron moderator, the neutron reflector or the matrix material with dispersed nuclear fuels due to its prominent properties. In the past 70 years, beryllium oxide has been studied extensively, but rarely been systematically organized. This article provides a systematic review of the application history, thermal properties, mechanical properties, corrosion behavior and fabrication methods of beryllium oxide. Data from previous literature are extracted and sorted out, and all of these original data are attached as the supplementary material, so that subsequent researchers can utilize this paper as a database for beryllium oxide research in reactor design or simulation analysis, etc. In addition, this review article also attempts to point out the insufficiency of research on beryllium oxide, and the possible key research areas about beryllium oxide in the future.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.59-59
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• 2010

Graphene has attracted much interest because of its fascinating electronic structure with excellent electron mobility. However, there are some difficulties in making graphene of large and uniform area for real applications. One alternative is graphite oxide. Since graphite oxide is water soluble, it can be sprayed or spin-coating onto any substrates for applications such as Transparent Conducting Film (TCF) and Field Effect Transistor (FET). In this talk, chemical and physical properties of graphite oxide will be discussed. In addition, possible applications made of graphite oxide (GO) will be introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.87-88
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• 2012

Metal oxide nanostructures have been applied to various fields such as energy, catalysts and electronics. We have freely designed one and two-dimensional (1 and 2-D) metal (transition metals and lanthanides) oxide nanostructures, characterized them using various techniques including scanning electron microscopy, transmission electron microscopy, X-ray diffraction crystallography, thermogravimetric analysis, FT-IR, UV-visible-NIR absorption, Raman, photoluminescence, X-ray photoelectron spectroscopy, and temperature-programmed thermal desorption (reaction) mass spectrometry. In addition, Ag- and Au-doped metal oxides will be discussed in this talk.

• Nuclear Engineering and Technology
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• v.45 no.1
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• pp.67-72
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• 2013

Stress corrosion cracking (SCC) behaviors of Alloy 690 were studied in lead-containing aqueous alkaline solutions using the slow strain rate tension (SSRT) tests in 0.1M and 2.5M NaOH with and without PbO at $315^{\circ}C$. The side and fracture surfaces of the alloy were then examined using scanning electron microscopy after the SSRT test. Microstructure and composition of the surface oxide layer were analyzed by using a field emission transmission electron microscopy, equipped with an energy dispersive X-ray spectroscopy. Even though Alloy 690 was almost immune to SCC in 0.1M NaOH solution, irrespective of PbO addition, the SCC resistance of Alloy 690 decreased in a 2.5M NaOH solution and further decreased by the addition of PbO. Based on thermodynamic stability and solubility of oxide, high Cr of 30wt% in the Alloy 690 is favorable to SCC in mild alkaline and acidic solutions whereas the SCC resistance of high Cr Alloy 690 is weakened drastically in the strong alkaline solution where the oxide is not stable any longer and solubility is too high to form a passive oxide locally.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1535-1537
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• 2003

Manganese oxide electrode was designed to improve electrical conductivity for dimensionally stable anode(DSA) using discreet variation (DV)-X${\alpha}$ method. It was calculated in DV-X${\alpha}$ method that the addition of nickel to manganese oxide reduce the energy band gap of manganese oxide electrode. Therefore, it is estimated that nickel in 3 additive elements of Ti, Ni and Sn is the best candidate to improve the electrical conductivity of manganese oxide. The anodically deposited manganese oxide which was produced in 0.2M $MnSO_4$ and 0.2M (Mn,Ni)$SO_4$ solution had $MnSO_4$ structure which was identified by XRD. The $MnSO_4$ films produced in both solutions over than 50mA/$cm^2$ of current density and long deposition time of 600sec showed low adhesion with Ti substrate.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2675-2678
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• 2012

Studies on niobium anodization in the mixture of 1 M $H_3PO_4$ and 1 wt % HF at galvanostatic anodization are described here in detail. Interestingly, duplex niobium oxide consisting of thick barrier oxide and correspondingly thick porous oxide was prepared at a constant current density of higher than 0.3 $mAcm^{-2}$, whereas simple porous type oxide was formed at a current density of lower than 0.3 $mAcm^{-2}$. In addition, simple barrier or porous type oxide was obtained by galvanostatic anodization at a single electrolyte of either 1 M $H_3PO_4$ or 1 wt % HF, respectively. The formation mechanism of duplex type structures was ascribed to different forming voltages required for moving anions.