• 반도체디스플레이기술학회지
• /
• 제22권1호
• /
• pp.78-82
• /
• 2023

Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

• 반도체디스플레이기술학회지
• /
• 제11권4호
• /
• pp.1-6
• /
• 2012

Keeping the polarization direction of the projection light unchanged is of crucial importance for high quality of images on a double-screen 3D projection display system. It has been found that the deposition of oxide layers on the surfaces of scattering polarizer film results in an improvement of polarization maintenance property of the film. The secondary image formed on the front screen by the light scattered from the rear screen decreases by 30% through the application of oxide layers on both surfaces of the screen. Since the oxide layer can also be used as an anti-reflection (AR) coating of the film, this method is very effective for the projection display applications.

• 대한화학회지
• /
• 제54권4호
• /
• pp.380-386
• /
• 2010

황산 용액에서 양극산화(anodization)에 의하여 생성되는 산화피막의 생성과정(growth kinetics)과 이 피막의 전기적 성질을 전기화학적 임피던스 측정법(electrochemical impedance spectroscopy)으로 조사하였다. 산화피막은 $Al_2O_3$로 점-결함 모형(point defect model)에 따라 성장하였으며, n-형 반도체의 전기적 성질을 보였다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제10권2호
• /
• pp.100-106
• /
• 2010

The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제3권2호
• /
• pp.76-82
• /
• 2003

The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.243-246
• /
• 2004

W CMP 공정에서 abrasive 의 size 및 shape 에 따른 CMP 거동에 대해 관찰하였으며, 주요 제거 막질인 W 막질과 stopping layer 로 사용되는 Oxide 막질에 대한 압력(P)과 상대 속도(V) 영향성을 관찰하였다. CMP 제거량이 입자의 size 변화에 의존한다는 기존의 이론과는 달리 응집도(aggregate ratio) 변화가 주요 변수임을 밝혀 내었다. 한편, 각 막질에 대한 P,V 영향성 평가를 통해, 변형된 Prestonian equation 이 abrasive size 및 shape 에 상관없이 W 막질의 제거 거동을 설명하는데 중요한 역할을 수행함을 보였다. 그렇지만, W CMP 공정에서 stopping layer 로 사용되는 oxide 막질의 거동을 설명하는 데에는 어려움이 있었으며, 특히 P,V 에 의한 비선형적 removal rate(RR) 거동발생으로 인해 기존의 이론치와는 많은 차이를 나타내었다. 또한, abrasive size 와 shape 에 따라서도 복잡한 거동을 나타낸다.

• 센서학회지
• /
• 제7권1호
• /
• pp.73-82
• /
• 1998

실리콘 표면 미세가공에 있어서, 새로 개발된 HF 기상식각 공정은 미소구조체들을 띄우는데 매우 효과적임을 입증하였다. 무수 불화수소와 메탄올을 이용한 기상식각 시스템에 대한 기능 및 특성을 기술하였고, 실리콘 미세구조체룰 띄우기 위한 회생층 산화막들의 선택적 식각특성이 고찰되었다. 구조체층으로는 인이 주입된 다결정실리콘이나 SOI 기판의 단결정실리콘을 사용하였다. 회생층으로는 TEOS 산화막, 열산화막, 저온산화막을 사용하였다. 기존 습식식각과 비교해 볼 때, 공정에 기인된 고착현강이나 잔류물질이 없는 미세구조체를 성공적으로 제작하였다.

• 한국재료학회지
• /
• 제28권1호
• /
• pp.32-37
• /
• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• 한국산업보건학회지
• /
• 제26권2호
• /
• pp.119-138
• /
• 2016

Objectives: The purpose of this study is to review size, shape, and crystal structure-dependent toxicity of major metal oxide particles such as silicon dioxide, tungsten trioxide, aluminum oxide, and titanium dioxide as byproducts generated in semiconductor fabrication facility. Methods: To review the toxicity of major metal oxide particles, we used various reported research and review papers. The papers were searched by using websites such as Google Scholar and PubMed. Keyword search terms included '$SiO_2$(or $WO_3$ or $Al_2O_3$ or $TiO_2$) toxicity', 'health effects $SiO_2$(or $WO_3$ or $Al_2O_3$ or $TiO_2$). Additional papers were identified in references cited in the searched papers. Results: In various cell lines and organs of human and animals, cytotoxicity, genotoxicity, hepatoxicity, fetotoxicity, neurotoxicity, and histopathological changes were induced by silicon dioxide, tungsten trioxide, aluminium oxide, and titanium dioxide particles. Differences in toxicity were dependent on the cell lines, organs, doses, as well as the chemical composition, size, surface area, shape, and crystal structure of the particles. However, the doses used in the reported papers were higher than the possible exposure level in general work environment. Oxidative stress induced by the metal oxide particles plays a significant role in the expression of toxicity. Conclusions: The results cannot guarantee human toxicity of the metal oxide particles, because there is still a lack of available information about health effects on humans. In addition, toxicological studies under the exposure conditions in the actual work environment are needed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.926-929
• /
• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.