• Journal of Sensor Science and Technology
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• v.31 no.3
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• pp.151-155
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• 2022

In this paper, we present a highly-sensitive gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector using multi-finger structure whose photocurrent increases in proportion to the number of fingers. The drain current that flows through a MOSFET using multi-finger structure is proportional to the number of fingers. This study intends to confirm that the photocurrent of a GBT MOSFET-type photodetector that uses the proposed multi-finger structure is larger than the photocurrent per unit area of the existing GBT MOSFET-type photodetectors. Analysis and measurement of a GBT MOSFET-type photodetector that utilizes a multi-finger structure confirmed that photocurrent increases in ratio to the number of fingers. In addition, the characteristics of the photocurrent in relation to the optical power were measured. In order to determine the influence of the incident the wavelength of light, the photocurrent was recorded as the incident the wavelength of light varied over a range of 405 to 980 nm. A highly-sensitive GBT MOSFET-type photodetector with multi-finger structure was designed and fabricated by using the Taiwan semiconductor manufacturing company (TSMC) complementary metal-oxide-semiconductor (CMOS) 0.18 um 1-poly 6-metal process and its characteristics have been measured.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.125-131
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• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.141-146
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• 2017

In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.13-17
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• 2006

Dense and periodic arrays of holes and tungsten none dots were fabricated on silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano-size patterns, self-assembling resists were used to produce layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selectively deposited tungsten nano dots were formed inside nano-sized trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon sizes were 26 nm and 30 nm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.150-151
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• 2006

$Si_{0.88}Ge_{0.12}$/Si heterostructure channels grown by RPCVD were employed to n-type metal oxide semiconductor field effect transistors(MOSFETs), and their electrical properties were investigated. SiGe nMOSFETs presented very high transconductance compared to conventional Si-bulk MOSFETs, regardless substantial drawbacks remaining in subthreshold-slope, $I_{off}$, and leakage current level. It looks worthwhile to utilize excellent transconductance properties into rf applications requesting high speed and amplification capability, although optimization works on both device structure and unit processes are necessary for enhanced isolation and reduced power dissipation.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.62-64
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• 2015

We have investigated zinc tin oxide (ZTO) thin films under various silicon ratios. ZTO TFTs were fabricated by solution processing with the bottom gate structure. Furthermore, annealing process was performed at different temperatures in various annealing conditions, such as air, vacuum and wet ambient. Completed fabrication of ZTO TFT, and the performance of TFT has been compared depending on the annealing conditions by measuring the transfer curve. In addition, structure in ZTO thin films has been investigated by X-ray diffraction spectroscopy (XRD) and Scanning electron microscope (SEM). It is confirmed that the electrical performance of ZTO TFTs are improved by adopting optimized annealing conditions. Optimized annealing condition has been found for obtaining high mobility.

• Journal of the Korean Chemical Society
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• v.56 no.1
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• pp.47-53
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• 2012

We have investigated the growth kinetics and electronic properties of passive film of zinc in borate buffer solution. The oxide film formed in passivation process of zinc has showed the electronic properties of n-type semiconductor based on the Mott-Schottky equation. And it was found out that the oxide film consisted ZnO and $Zn(OH)_2$ was composed of deep and shallow donors.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.597-600
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• 1998

When a semiconductor(pMOSFET) sensor is exposed to ionizing radiation, electrons/holes are generated in its oxide layer. By the phenomenon of hole traps in oxide layer during their move, the characteristics of semiconductor is changed. This paper describes the output characteristic changes of two kind of pMOSFET(domestic, japan) after C0-60 ${\gamma}$-irradiation on them for their application as radiation accumulated dose monitoring sensors. We found the threshold voltage shifts (VT) of pMOSFETs in proportion to irradiated radiation dose and their linear properties. These results make us confirm that we will be able to develop good accumulated radiation dose monitoring sensors.

• ETRI Journal
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• v.30 no.6
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• pp.833-843
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• 2008

The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.

• International Journal of Aeronautical and Space Sciences
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• v.11 no.3
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• pp.201-205
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• 2010

DC/DC Switching power converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. A switching converter utilizes one or more energy storage elements such as capacitors, or transformers to efficiently transfer energy from the input to the output at periodic intervals. The fundamental boost converter studied here consists of a power metal-oxide semiconductor field effect transistor switch, an inductor, a capacitor, a diode, and a pulse-width modulation circuit with oscillator, amplifier, and comparator. A buck converter containing a switched-mode power supply is also studied. In this paper, the electrical characteristics of DC/DC power converters are simulated by simulation program with integrated circuit emphasis (SPICE). Furthermore, power efficiency was analyzed based on the specifications of each component.