Development of p-MOSFET Type Accumulated Radiation Dose Monitoring Sensor

p-MOSFET 타입 방사선 누적선량 모니터링 센서 개발

When a semiconductor(pMOSFET) sensor is exposed to ionizing radiation, electrons/holes are generated in its oxide layer. By the phenomenon of hole traps in oxide layer during their move, the characteristics of semiconductor is changed. This paper describes the output characteristic changes of two kind of pMOSFET(domestic, japan) after C0-60 ${\gamma}$-irradiation on them for their application as radiation accumulated dose monitoring sensors. We found the threshold voltage shifts (VT) of pMOSFETs in proportion to irradiated radiation dose and their linear properties. These results make us confirm that we will be able to develop good accumulated radiation dose monitoring sensors.