• 공업화학
• /
• 제9권2호
• /
• pp.214-219
• /
• 1998

초음파분무 열분해에 의하여 유리 기판 위에 투명전도성 산화주석막을 증착하였다. 증착변수가 산화주석막의 전기저항, 광투과도, 결정구조 및 두께에 미치는 영향을 조사하였다. 증착시간과 염화주석(IV)의 농도가 증가함에 따라, 증착된 산화주석막의 전기저항과 가시선 및 근적외선 영역에서의 광투과도가 감소함을 보여주었다. 공기중에서 열처리온도가 증가하면, 증착된 산화주석막은 전기저항과 광투과도가 증가함을 나타냈다. 본 연구결과는 초음파분무열분해가 단일과정으로서 양질의 투명전도막을 효율적으로 제조할 수 있는 유망한 증착기술임을 암시한다.

• Advances in nano research
• /
• 제5권3호
• /
• pp.231-244
• /
• 2017

Graphene oxide (GO) was prepared by modified Hummer's method to produce reduced graphene oxide (RGO) following standard thermal and chemical reduction processes. Prepared RGO colloids were utilized to fabricate RGO films over glass and FTO coated glass substrates through drop-coating. A systematic study was performed to evaluate the effect of reduction degree on the optical and electrical properties of the RGO film. We demonstrate that both the reduction process (thermal and chemical) produce RGO films of similar optical and electrical behaviors. However, the RGO films fabricated using chemically reduced GO colloid render better performance in dye sensitized solar cells (DSSCs), when they are used as counter electrodes (CEs). It has been demonstrated that RGO films of optimum thicknesses fabricated using RGO colloids prepared using lower concentration of hydrazine reducer have better catalytic performance in DSSCs due to a better catalytic interaction with redox couple. The better catalytic performance of the RGO films fabricated at optimal hydrazine concentration is associated to their higher available surface area and lower grain boundaries.

• 한국세라믹학회지
• /
• 제44권6호
• /
• pp.313-318
• /
• 2007

ITO (Indium-tin oxide) thin films have been prepared by a sol-gel spinning coating method and fired and annealed in the temperature range of $450-600^{\circ}C$. The XRD patterns of the films indicated the main peak of (222) plane and showed higher crystallinity with increasing an annealing temperature. The surface of the ITO thin films were treated with 0.1 N HCl 20% solution at room temperature. The effects of surface treatment on electrical properties and surface morphologies of the ITO films were investigated with the results of sheet resistance and FE-SEM, AFM images. The samples, subsequently treated with acidic solution for 40 sec showed the sheet resistance of $0.982\;k{\Omega}/square$. The surface treatment using acidic solution diminished the RMS (root mean square) value and the residual carbon content of the ITO films. It seemed that the acid-cleaning of the ITO thin films lead to the decrease of surface roughness and sheet resistance.

• 한국전기전자재료학회논문지
• /
• 제30권10호
• /
• pp.651-655
• /
• 2017

This work reports the surface morphology and transmittance of copper oxide thin films for semitransparent solar cell applications. We prepared the oxide specimens by subjecting copper thin films to an oxidation reaction at annealing temperatures ranging between $100^{\circ}C$ and $300^{\circ}C$. The color of the as-deposited specimen was red, but changed to purple at the annealing temperature of $300^{\circ}C$. The surface morphology and transmittance of the specimens were significantly dependent on the annealing temperature and thickness of the copper films. Copper oxide nanoparticles prepared from a 20-nm-thick copper film at an annealing temperature of $300^{\circ}C$ provided a maximum transmittance of 93%. The obtained optical characteristics and surface morphology suggest that copper oxide thin films prepared by an oxidation reaction can be potentially employed as color- and transmittance-adjusting layer in semitransparent thin solar cells.

• 한국재료학회지
• /
• 제28권9호
• /
• pp.516-521
• /
• 2018

Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

• 한국표면공학회지
• /
• 제29권6호
• /
• pp.660-665
• /
• 1996

Thin films of indium oxide and indium tin oxide have been prepared by d.c. magnetron sputtering onto the fused silica substrates kept at 90, 200 and $300^{\circ}C$. In order to elucidate the optical absorption process in low energy region below 3 eV, we have analyzed the absorption coefficients obtained from reflectance and transmittance measurements for these films based on the Lucovsky model. It has been found for the first time that a defect center in the band gap is located at 0.8~1.4 eV below the Fermi level in all films and arises from oxygen vacancies in their films. The optical absorption in low energy region is explained to be dominated by the transition of electrons trapped at the positively charged (+2e) oxygen vacancies with s-like nature to the conduction band formed from the 5s-orbit in indium atoms.

• 태양에너지
• /
• 제16권2호
• /
• pp.87-96
• /
• 1996

아르곤-산소분위기에서 텅스텐산화물 표적을 사용한 rf 마그네트론 스파타링 방법으로 전기적 착색 텅스텐산화물 박막이 ITO가 피복된 유리기판 위에 제작되었다. 사파타링에 의한 제작 조건 중 특히 기판온도가 막의 화학적 안정성에 미치는 영향이 연구되었다. 박막은 리듐퍼코로라이트와 황산 전해질 속에서 전기화학적으로 이온의 주입과 추출 과정이 반복되었으며 또한 착색성을 나타내었다. 착색성을 나타낸 텅스텐 산화물박막들 중에서 기판 온도가 $150^{\circ}C$에서 제작된 막의 내구성이 가장 안정되었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.406-407
• /
• 2007

We prepared indium zinc oxide (IZO) thin film for cathode electrode such as an application of flat panel display by using the facing targets sputtering (FTS) method at room temperature. The effects of input power and film thickness were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, microstructure and transmittance. We could obtain properties of IZO thin films of under $10^{-3}\;{\Omega}-cm$ in resistivity and the thin films of over 90% in transmittance. Also, we obtained IZO thin films which were an amorphous structure.

• 한국표면공학회지
• /
• 제33권4호
• /
• pp.229-232
• /
• 2000

C-axis oriented zinc oxide thin films were deposited on glass substrate by reactive Facing Targets Sputtering (FTS) system. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alphastep (Tencor) analyses. The Facing Targets Sputtering system can deposit thin film in plasma-free situation and change the deposition condition in wide range. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature $300^{\circ}C$, inter targets distance 100mm. In the conditions, the rocking curve of zinc oxide thin films deposited on ZnO/Glass was $3.9^{\circ}$.

• 한국표면공학회지
• /
• 제42권6호
• /
• pp.260-266
• /
• 2009

The anodic oxidation behaviour of a cast component of AC2A Al alloy with machined surface and ascast surface was investigated in sulfuric acid solution. The anodized specimen showed relatively uniform and thick anodic oxide films on the as-cast surface, while non-uniform and very thin oxide films were formed on the machined surface. Non-anodized as-cast surface was observed to be covered with thick oxide scales and showed a number of second-phase particles containing Si, while non-anodized machined surface showed no oxide scales and relatively very small number of Si particles. Thus, the very limited growth of anodic oxide films on the as-cast surface was attributed to the presence of thick oxide scales and Si-containing second-phase particles on its surface.