• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.631-636
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• 2012

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

• Current Photovoltaic Research
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• v.7 no.4
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• pp.97-102
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• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.506-514
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• 2007

To select the best oxygen carrier particle for syngas fueled chemical-looping combustor, the reduction reactivity and carbon deposition characteristics were determined in a thermogravimetric analyzer. Four kinds of oxygen carrier particles (NiO/bentonite, $NiO/LaAl_{11}O_{18}$, $Co_xO_y/CoAl_2O_4$, $NiO/NiAl_2O_4$) were tested with the simulated syngas (30% $H_2$, 10% $CO_2$, 60% CO) as a reduction gas. With each of these particles, the maximum conversion and oxygen transfer capacity increase with increasing the reduction temperature At the given experimental range, the optimum operating temperature to maximize oxygen transfer rate is found to be $900^{\circ}C$ and carbon deposition on the particles could avoid at the temperature above $800^{\circ}C$. Among four kinds of oxygen carrier particles, the NiO-based particles exhibits better reactivity than the CoO-based particle. Moreover, the NiO/bentonite particle produces the best reactivity based on the oxygen transfer rate and the degree of carbon deposition. The measured oxygen transfer rate increases as the metal oxide content in NiO/bentonite particle is increased thereby higher metal oxide contents could provide stable operation of chemical-looping combustor.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.159-162
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• 2016

We studied an electrolyte-dielectric metal (EDM) device based on a Si₃N₄ layer-coated anodic aluminium oxide (AAO) template for chemical sensors. The AAO templates were fabricated using a two-step anodization procedure at 0℃ and 70 V in 0.3 M oxalic acid, after which the Si₃N₄ was deposited on them using plasma enhanced chemical vapor deposition (PECVD). The average pore size was approximately 106 nm and the depth of the AAO templates was 24.6 nm to 86.5 nm. The Si₃N₄ layer-coated AAO is more stable than a single AAO template.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.248-248
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• 2016

We have investigated the crystallinity, preferential ordering, and interfacial stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin film interconnected with organic/inorganic multilayer. At the region close to the organic-organic interface, HATCN formed low crystalline order with substantial amorphous phase. As film growth continued, HATCN stacked with high crystalline phase. After a sputtering deposition of the indium zinc oxide (IZO) layer on top of HATCN/organic layer, the volume fraction of preferentially ordered HATCN crystals increased without any structural deterioration. In addition, the HATCN surface was kept quite stable by preserving the sharp interface between HATCN and sputtering deposited IZO layers.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.2-62
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• 2003

Material Characteristics of zirconium oxide thin films obtained by plasma enhanced chemical vapor deposition on p-type Si(100) substrates were investigated to explain their unable electrical properties. The films obtained without heating had polycrystalline nanograins that are mostly of a tetragonal phase under oxygen-deficient plasma conditions but transformed into a monoclinic phase with increasing $O_2$ addition in the plasma. Mostly amorphous bulk $ZrO_2$ with a relatively thicker and smoother interfacial layer was obtained from oxygen-rich plasmas, resulting in a decrease in both the overall dielectric constant and the leakage current density. the interfacial layer formed between the bulk $ZrO_2$ and Si substrate was analyzed to be zirconium silicate, which approached $SiO_2$ as its zirconium content decreased with the increasing gas phase $O_2$ content.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.25-29
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• 1999

We have developed a laser molecular beam epitaxy system for the layer-by-layer growth of oxide thin films. Using this system, we could grow and control oxide thin films of LaAlO$_3$in a molecular layer epitaxy mode on the atomically flat SrTiO$_3$ substrate with a LaAlO$_3$single crystal target. Very clear RHEED oscillations were observed during to growth of a LaAlO$_3$ film for a long period under the optimized conditions of substrate temperature at $650^{\circ}C$, oxygen pressure at 1$\times$10\ulcorner torr, and an incident laser fluence of 4.6J/$\textrm{cm}^2$. The height of mono-layer-LaAlO$_3$ film grown during one period of RHEED intensity oscillation was 3.8$\AA$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.123-123
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• 2003

나노튜브는 반도체 재료로서 뿐만 아니라 다른 분야로까지 다양한 응용범위를 가진 물질로서 기존에는 주의 탄소를 사용하여 제작, 사용되어지고 있으나 게이트옥사이드(Gate Oxide) 물질인 지르코니아(ZrO$_2$), 타이타니아(TiO2$_2$) 등을 이용한 나노튜브는 많이 제작되어지고 있지 못하다. 따라서 보다 나은 성질을 갖는 물질로서 나노튜브를 제작할 시 반도체 재료에서의 고집적화를 통해 좋은 성질을 갖게 할 수 있으며 여러 분야로까지 확대가 가능한 재료를 사용하여 광학 및 환경분야 등 응용범위를 넓힐 수 있다. 본 실험은 나노튜브 제작에 있어서 템플레이트의 구멍 내부를 ALD 기술을 이용하여 균일한 두께를 갖는 금속 산화물층을 성장시킨 후 템플레이트 재료의 식각을 통해 금속산화물 나노튜브가 남아있게 하여 제작하는 방법이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.321-324
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• 2013

In this study, The RF magnetron sputter and evaporator was on glass substrates 30 mm ${\times}$ 30 mm OMO multilayer thin film structure is applied to the low-e. Structural and optical properties, a thin film was produced, the variable was placed into a variable deposition time of the oxide layer. According to the XRD measurement results there is no peak that satisfies the Bragg's law ($2dsin{\theta}=n{\lambda}$) which confirmed that it is an amorphous structure. RMS value of the results of the AFM measurement, has a roughness of less than 2 nm. transmittance measurements results, visible light region an average 80%, IR region 40% showed.