Characteristics of Oxide Films Deposited with Remote Plasma Enhanced Chemical Vapor Deposition at Low Temperatures From $SiH_4-N_2O$
(원거리 플라즈마 화학증착에 의한 실리콘 산화막의 물성)
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- Journal of the Korean Vacuum Society
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- v.3 no.4
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- pp.426-433
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- 1994