Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 3 Issue 4
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- Pages.426-433
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- 1994
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- 1225-8822(pISSN)
Characteristics of Oxide Films Deposited with Remote Plasma Enhanced Chemical Vapor Deposition at Low Temperatures From $SiH_4-N_2O$
원거리 플라즈마 화학증착에 의한 실리콘 산화막의 물성
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