• Title/Summary/Keyword: Oxidation time

Search Result 1,547, Processing Time 0.028 seconds

Effects of Oxidized Tallow on the Rabbit Serum Lipids and Antioxidant Activity of the In-vitro Lipids

  • Zeb, Alam;Rahman, Waheed Ur
    • Toxicological Research
    • /
    • v.28 no.3
    • /
    • pp.151-157
    • /
    • 2012
  • This paper describes the effects of thermally oxidized tallow on the serum lipids profile and radical scavenging activity (RSA) of the lipids extracted from the different tissues of the rabbits. Tallow was thermally oxidized at $130^{\circ}C$ for 9, 18, 27, 36 and 45 h respectively. Thermally oxidized tallow was fed to the local strain of Himalayan rabbits for one week. Results show that oxidation increases the formation of hydroperoxides and decrease the level of radical scavenging activity of the tallow. The rabbit serum lipids profile showed a dose dependent increase in triglyceride, total cholesterol and LDL-cholesterol. However, no statistically significant increase was observed in the HDL-cholesterol with an increase of oxidation time. Serum glucose and rabbits body weight decrease significantly (p < 0.05) and was highly correlated with the serum lipids profile. The percent RSA of the lipids extracted from the liver, brain and muscles tissues showed a significant decrease with respect to 0.5, 1.0 and 1.5 g/body weight as well as oxidation time. Data suggests that thermal oxidation and use of thermally oxidized beef tallow is harmful and therefore an alternative way of cooking should be used.

N-type Silicon Solar Cell Based on Passivation Layer Grown by Rapid Thermal Oxidation (Rapid Thermal Oxidation 기반의 표면 보호막을 이용한 n-type 실리콘 태양전지의 제작과 전기적 특성 분석)

  • Ryu, Kyungsun;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.26 no.1
    • /
    • pp.18-21
    • /
    • 2013
  • $SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

The Effects of Pseudotsuga menziesii Monoterpenoids on Nitrification (Pseudotsuga menziesii의 Monoterpenoid가 질화작용에 미치는 효과)

  • ;Jean H. Langenheim
    • The Korean Journal of Ecology
    • /
    • v.17 no.3
    • /
    • pp.251-260
    • /
    • 1994
  • Nitrification potential bioassay and terpenoid analyses were performed to determine the roles of terpenoid as an inhibitor of nitrification in the Douglas fir (Pseudotsuga menziesii) forests. The effect of terpenoids in the forest floor was also tested by adding $10{\mu}g/ml$ of four terpenoids(${\alpha}-pinene,{\beta}-pinene,{\gamma}-terpinene, and terpinolene) to mineral soils. The amount of terpenoids in the litter was higher than that in the soil and varied over time, but the amount of terpenoids in the soils was relatively constant. The correlation between the amount of terpenoids in the litter and ammonium oxidation was in inverse proportion to that in the mineral layers $(r^2=0.678)$. Inhibition of ammonium oxidation by terpenoids in the litter was always higher than in the mineral layer, but nitrite oxidation was different from the ammonium oxidation. The fact that there was greater nitrate production from ammonium in the mineral layer than in the forest floor layer seems to be due to the less amounts of terpenoids in the mineral layer. The result of the experiment in which four terpenoids were added to the mineral layer suggests that, after some lag time, the four terpenoids were effective in inhibiting ammonium oxidation. However, nitrite oxidation did not appear to be affected by the four terpenoids. Accordingly, all of our results suggested that terpenoids in Douglas fir forests apparently would act as a part of the inhibitors of nitrification.

  • PDF

A Study on Evaluation of Oxidation Degradation of Bidiesel and Biodiesel Blended Fuel Distributing in Domestic (국내 유통 바이오디젤 및 바이오디젤 혼합연료의 산화열화 연구)

  • Min, Kyong-Il;Yim, Eui Soon;Na, Byung-Ki;Jung, Choong-Sub
    • Transactions of the Korean Society of Automotive Engineers
    • /
    • v.21 no.4
    • /
    • pp.135-143
    • /
    • 2013
  • In this study, we suggested effective countermeasure of biodiesel oxidation problems by investigating the oxidation degradation of biodiesels derived from variable resources and the level of oxidation stability of current distributing biodiesel blended fuels (2%) in Korea, and oxidation stability change according to storage time (for 3 month) and biodiesel blending ratio (2, 5, 7, 10%). By the composition analysis results of biodiesel from various resources which are possible to distribute in Korea, the biodiesel from animal fat has poor oxidation stability and cold performance, while the biodiesel from coconut and palm kernel which are considered as future potential raw material showed good oxidation stability and cold performance. The oxidation stability level of current distributing biodiesel blended fuels in Korea was excellent with showing over 30 hours (average 68 hours) stability, but the oxidation stability of the blended fuel with animal fat biodiesel having poor oxidation property (1.22 hours) was rapidly decreased to below 32 hours by mixing only 2%. Therefore, we have to pay attention to quality control of oxidation property, because the oxidation stability problem can be caused by increasing biodiesel blending ratio and diversifying raw materials those have worse property.

HIGH TEMPERATURE OXIDATION OF NB-CONTAINING ZR ALLOY CLADDING IN LOCA CONDITIONS

  • Chuto, Toshinori;Nagase, Fumihisa;Fuketa, Toyoshi
    • Nuclear Engineering and Technology
    • /
    • v.41 no.2
    • /
    • pp.163-170
    • /
    • 2009
  • In order to evaluate high-temperature oxidation behavior of the advanced alloy cladding under LOCA conditions, isothermal oxidation tests in steam were performed with cladding specimens prepared from high burnup PWR fuel rods that were irradiated up to 79 MWd/kg. Cladding materials were $M5^{(R)}$ and $ZIRLO^{TM}$, which are Nb-containing alloys. Ring-shaped specimens were isothermally oxidized in flowing steam at temperatures from 1173 to 1473 K for the duration between 120 and 4000s. Oxidation rates were evaluated from measured oxide layer thickness and weight gain. A protective effect of the preformed corrosion layer is seen for the shorter time range at the lower temperatures. The influence of pre-hydriding is not significant for the examined range. Alloy composition change generally has small influence on oxidation in the examined temperature range, though $M5^{(R)}$ shows an obviously smaller oxidation constant at 1273 K. Consequently, the oxidation rates of the high burnup $M5^{(R)}$ and $ZIRLO^{TM}$ cladding are comparable or lower than that of unirradiated Zircaloy-4 cladding.

Glucose Oxidation on Gold-modified Copper Electrode

  • Lim, Ji-Eun;Ahn, Sang Hyun;Pyo, Sung Gyu;Son, Hyungbin;Jang, Jong Hyun;Kim, Soo-Kil
    • Bulletin of the Korean Chemical Society
    • /
    • v.34 no.9
    • /
    • pp.2685-2690
    • /
    • 2013
  • The activities of Au-modified Cu electrodes toward glucose oxidation are evaluated according to their fabrication conditions and physico-chemical properties. The Au-modified Cu electrodes are fabricated by the galvanic displacement of Au on a Cu substrate and the characteristics of the Au particles are controlled by adjusting the displacement time. From the glucose oxidation tests, it is found that the Au modified Cu has superior activity to the pure Au or Cu film, which is evidenced by the negative shift in the oxidation potential and enhanced current density during the electrochemical oxidation. Though the activity of the Au nanoparticles is a contributing factor, the enhanced activity of the Au-modified Cu electrode is due to the increased oxidation number of Cu through the electron transfer from Cu to more electronegative Au. The depletion of electron in Cu facilitates the oxidation of glucose. The stability of the Au-modified Cu electrode was also studied by chronoamperometry.

The effects of pile dup Ge-rich layer on the oxide growth of $Si_{1-x}Ge_{x}$/Si epitaxial layer (축적된 Ge층이 $Si_{1-x}Ge_{x}$/Si의 산화막 성장에 미치는 영향)

  • 신창호;강대석;박재우;송성해
    • Proceedings of the IEEK Conference
    • /
    • 1998.06a
    • /
    • pp.449-452
    • /
    • 1998
  • We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

  • PDF

Oxidation Behavior of Ti1-xAlxN Barrier Layer for Memory Devices (메모리소자를 위한 Ti1-xAlxN 방지막의 산화 거동)

  • Park, Sang-Shik
    • Korean Journal of Materials Research
    • /
    • v.12 no.9
    • /
    • pp.718-723
    • /
    • 2002
  • $Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

A Study on Mechanical Properties of Oxygenated SiC Material (산화된 탄화규소재료의 기계적 특성에 대한 연구)

  • Sang Pill Lee;Jae Hwan Kwak;Jin-Kyung Lee
    • Journal of the Korean Society of Industry Convergence
    • /
    • v.27 no.2_2
    • /
    • pp.397-402
    • /
    • 2024
  • Silicon carbide materials undergo an oxidation reaction in a high-temperature oxidizing environment and show different characteristics depending on the test temperature and time. In particular, the added oxides form a secondary phase within the sintering process and exhibit different oxidation characteristics depending on the added sintering materials. Therefore, to evaluate the oxidation characteristics, the weight of the test piece and the thickness of the oxidation layer were observed, and the structure and oxidation characteristics of the material were analyzed using SEM. SEM observation showed that an oxide layer was formed on the surface of the liquid sintered silicon carbide material after it was oxidized at 1200 ℃, 1300 ℃, and 1400 ℃ for 10 hours, respectively. Then, a bending test was performed at each temperature on the test piece with the oxidation layer formed to evaluate the change in flexural strength. The strength was 466.6 MPa at 1200 ℃, 363.1 MPa at 1300 ℃, and 350.8 MPa at 1400 ℃. Al2O3-SiO2 oxidized at 1200 ℃ for 10 hours showed an increase in strength of about 21.0 MPa compared to the data before the oxidation test.

Effects on the Oxidation Rate with Silicon Orientation and Its Surface Morphology (실리콘배향에 따른 산화 속도 영향과 표면 Morphology)

  • Jeon, Bup-Ju;Oh, In-Hwan;Um, Tae-Hoon;Jung, Il-Hyun
    • Applied Chemistry for Engineering
    • /
    • v.8 no.3
    • /
    • pp.395-402
    • /
    • 1997
  • The $SiO_2$ films were prepared by ECR(electron cyclotron resonance) plasma diffusion method, Deal-Grove model and Wolters-Zegers-van Duynhoven model were used to estimate the oxidation rate which was correlated with surface morphology for different orientation of Si(100) and Si(111). It was seen the $SiO_2$ thickness increased linearly with initial oxidation time. But oxidation rate slightly decrease with oxidation time. It was also shown that the oxidation process was controlled by the diffusion of the reactive species through the oxide layer rather than by the reaction rate at the oxide interface. The similar time dependency has been observed for thermal and plasma oxidation of silicon. From D-G model and W-Z model, the oxidation rate of Si(111) was 1.13 times greater than Si(100) because Si(111) had higher diffusion and reaction rate, these models more closely fits the experimental data. The $SiO_2$ surface roughness was found to be uniform at experimental conditions without etching although oxidation rate was increased, and to be nonuniform due to etching at experimental condition with higher microwave power and closer substrate distance.

  • PDF