• Title/Summary/Keyword: Output power oscillation

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Diagnosis Method and Characteristic Analysis of Shorted Turns on Generator Rotor using Flux Sensorless (자속센서리스 회전자 층간단락 진단기법 및 특성해석)

  • Kim Sun-Ja;Jeon Ywun-Seok;Lee Seung-Hak;Jeong Byung-Hwan;Lee Myung-Un;Choe Gyu-Ha
    • The Transactions of the Korean Institute of Power Electronics
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    • v.10 no.3
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    • pp.257-263
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    • 2005
  • Short-circuit rotor windings on a generator causes unstable oscillation of unbalance of flux, asymmetrical heat. In order to prevent serious accidents of short-circuit rotor windings, it is important to study the shorted-turn diagnosis method for rotor windings of the generator. To improve the defects of the diagnosis with sensors, the new sensorless method for rotor shorted-turn diagnosis is proposed, which is to measure the electrical values of the voltage and current at the generator and then to detect if the shorted-turned phenomena would occurred. For the feasibility of the suggested method the theoretical results are shown in the aspects of the air-gap flux density, the flux leakage, the generated output voltage and the shorted field current through the digital simulation. Also the possibility of decision for the suggested sensorless method could be shown in this paper.

A study on the fabrication of semiconductor laser for optical sensor (광센서 광원용 반도체 레이저의 제작에 관한 연구)

  • Kim, Jeong-Ho;An, Se-Kyung;Hwang, Sang-Ku;Hong, Tchang-Hee
    • Journal of Navigation and Port Research
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    • v.26 no.2
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    • pp.235-243
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    • 2002
  • Theoretical analysis have been performed to design the high power semiconductor laser for an optical sensor at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest loss wavelength in optical fiber. The materials of active region and SCH were $Ln_{1-x}Ga_xAs_yP_{1-y}$. In order to use the light source of optical sensors, it has to satisfy wide spectral width and short coherence length. Therefore, in order to suppress lasing oscillation, we proposed laterally tilted PBH type with a window region. Also, tapered stripe structure was applied for high coupling efficiency into a single mode fiber. From these analyses, the devices of laterally tilted angled and bending structure were fabricated and their characteristics were measured. In the results of the measurement, the fabricated devices have sufficient output power and wide FWHM to apply to the light source of optical fiber sensors.

Design and Fabrication of CMOS Low-Power Cross-Coupled Voltage Controlled Oscillators for a Short Range Radar (근거리 레이더용 CMOS 저전력 교차 결합 전압 제어 발진기 설계 및 제작)

  • Kim, Rak-Young;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.6
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    • pp.591-600
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    • 2010
  • In this paper, three kinds of 24 GHz low-power CMOS cross-coupled voltage controlled oscillators are designed and fabricated for a short-range radar applications using TSMC 0.13 ${\mu}m$ CMOS process. The basic CMOS crosscoupled voltage controlled oscillator is designed for oscillating around a center frequency of 24.1 GHz and subthreshold oscillators are developed for low power operation from it. A double resonant circuit is newly applied to the subthreshold oscillator to improve the problem that parasitic capacitance of large transistors in a subthreshold oscillator can push the oscillation frequency toward lower frequencies. The fabricated chips show the phase noise of -101~-103.5 dBc/Hz at 1 MHz offset, the output power of -11.85~-15.33 dBm and the frequency tuning range of 475~852 MHz. In terms of power consumption, the basic oscillator consumes 5.6 mW, while the subthreshold oscillator does 3.3 mW. The subthreshold oscillator with the double resonant circuit shows relatively lower power consumption and improved phase noise performance while maintaining a comparable frequency tuning range. The subthreshold oscillator with double resonances has FOM of -185.2 dBc based on 1 mW DC power reference, which is an about 3 dB improved result compared with the basic oscillator.

The design of the high efficiency DC-DC Converter with Dynamic Threshold MOS switch (Dynamic Threshold MOS 스위치를 사용한 고효율 DC-DC Converter 설계)

  • Ha, Ka-San;Koo, Yong-Seo;Son, Jung-Man;Kwon, Jong-Ki;Jung, Jun-Mo
    • Journal of IKEEE
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    • v.12 no.3
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    • pp.176-183
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    • 2008
  • The high efficiency power management IC(PMIC) with DTMOS(Dynamic Threshold voltage MOSFET) switching device is proposed in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuits consist of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit as a block. The Saw-tooth generator is made to have 1.2 MHz oscillation frequency and full range of output swing from ground to supply voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on Voltage-mode PWM control circuits and low on-resistance switching device, achieved the high efficiency near 95% at 100mA output current. And DC-DC converter is designed with LDO in stand-by mode which fewer than 1mA for high efficiency.

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Study of Composite channel Structure of Metamorphic HEMT for the Improved Device Characteristics (기존의 MHEMT와 InP 합성 채널 MHEMT의 소자의 항복 특성 분석 및 비교 연구)

  • Choi, Seok-Gyu;Baek, Yong-Hyun;Han, Min;Bang, Seok-Ho;Yoon, Jin-Seob;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.12
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    • pp.1-6
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    • 2007
  • In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.

Design and Fabrication of Wide Electrical Tuning Range DRO Using Open-Loop Method (개루프 방법에 의한 확장된 전기적주파수조정범위를 갖는 유전체공진기발진기의 설계 및 제작)

  • Jeong, Hae-Chang;Oh, Hyun-Seok;Yang, Seong-Sik;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.6
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    • pp.570-579
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    • 2009
  • In this paper, we presented a Vt-DRO with a wide electrical frequency tuning range, using open-loop gain method. The Vt-DRO was composed of 3-stages, resonator, amplifier and phase shifter. In order to satisfy an oscillation condition, we determined magnitude and phase of each stage. The measured S-parameter of cascaded 3-stages shows open-loop oscillation condition. Also, using measured open loop group delay, we derived the relation for electrical frequency tuning range. The Vt-DRO was implemented by connecting the input and the output of the designed open-loop and resulted in closed-loop. As a results, tuning-range of Vt-DRO is 82 MHz, which is close to the predicted results for tuning voltage 0${\sim}$10 V and shows linear frequency tuning at the center frequency of 5.3 GHz. The phase noise is -104 ${\pm}$1 dBc/Hz at 100 kHz offset frequency and power is 5.86${\pm}$1 dBm respectively.

Wavelength Interrogation Technique for Bragg Reflecting Strain Sensors Based on Arrayed Waveguide Grating (도파로 어레이 격자를 이용한 광섬유 브래그 스트레인 센서의 반사파장 신호 복원 기술)

  • Seo, Jun-Kyu;Kim, Kyung-Jo;Oh, Min-Cheol;Lee, Sang-Min;Kim, Young-Jae;Kim, Myung-Hyun
    • Korean Journal of Optics and Photonics
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    • v.19 no.1
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    • pp.68-72
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    • 2008
  • Fiber-optic strain sensors based on Bragg reflection gratings produce the change of reflection spectrum when an external stress is applied on the sensor. To measure the Bragg reflection wavelength in high speed, an arrayed waveguide grating device is incorporated in this work. By monitoring the output power from each channel of the AWG, the peak wavelength corresponding to the applied strain could be obtained. To enhance the accuracy of the AWG wavelength interrogation system, a chirped fiber Bragg grating with a 3-dB bandwith of 5.4 nm is utilized. The high-speed response of the proposed system is demonstrated by measuring a fast varying strain produced by the damped oscillation of a cantilever. An oscillation frequency of 17.8 Hz and a damping time constant of 0.96 second are obtained in this measurement.

Design of X-Band SOM for Doppler Radar (도플러 레이더를 위한 X-Band SOM 설계)

  • Jeong, Sun-Hwa;Hwang, Hee-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.12
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    • pp.1167-1172
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    • 2013
  • This paper presents a X-band doppler radar with high conversion gain using a self-oscillating-mixer(SOM) that oscillation and frequency mixing is realized at the same time. To improve phase noise of the SOM oscillator, a ${\lambda}/2$ slotted square patch resonator(SSPR) was proposed, which shows high Q-factor of 175.4 and the 50 % reduced circuit area compared to the conventional resonator. To implement the low power system, low biasing voltage of 1.7 V was supplied. To enhance the conversion gain of the SOM, bias circuit is configured near the pinch-off region of transistor, and the conversion gain was optimized. The output power of the proposed SOM was -3.16 dBm at 10.65 GHz. A high conversion gain of 9.48 dB was obtained whereas DC Power consumption is relatively low about 7.65 mW. The phase noise is -90.91 dBc/Hz at 100 kHz offset. The figure-of-merit(FOM) of the proposed SOM was measured as -181.8 dBc/Hz, which is supplier to other SOMs by more than about 7 dB.

A 70/140 GHz Dual-Band Push-Push VCO Based on 0.18-㎛ SiGe BiCMOS Technology (0.18-㎛ SiGe BiCMOS 공정 기반 70/140 GHz 듀얼 밴드 전압 제어 발진기)

  • Kim, Kyung-Min;Kim, Nam-Hyung;Rieh, Jae-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.2
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    • pp.207-212
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    • 2012
  • In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

Low Phase Noise VCO Using Complimentary Bifilar Archimedean Spiral Resonator(CBASR) (Complimentary Bifilar Archimedean Spiral Resonator(CBASR)를 이용한 저위상 잡음 전압 제어 발진기)

  • Lee, Hun-Sung;Yoon, Won-Sang;Lee, Kyoung-Ju;Han, Sang-Min;Pyo, Seong-Min;Kim, Young-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.6
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    • pp.627-634
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    • 2010
  • In this paper, a novel voltage-controlled oscillator(VCO) using the complimentary bifilar archimedean spiral resonator(CBASR) is presented for reducing the phase noise characteristic. A CBASR has compact dimension, a sharp skirt characteristic in stopband, a low insertion loss in passband, and a large coupling coefficient value, which makes a high Q value and improve the phase noise of VCO. The proposed VCO has the oscillation frequency of 2.396~2.502 GHz in the tuning voltage of 0~5 V, the output power of 7.5 dBm and phase noise of -119.16~-120.2 dBc/㎐ at the offset frequency of 100 kHz in tuning range.