• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.2
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• pp.171-178
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• 1998

Generally, the output matching circuit has the most influence to the output power of oscillator and existing method for output matching has difficulty for making the optimum output matching circuit because the matching has to be done nearby the infinite impedance area of the Smith Chart. In this paper, it is studied for the output matching circuit of the microwave oscillator to get the maximum output power. The maximum output point can be found by adjusting the position of moving short in the Tuner while the oscillator is operating after connect the 3-dB coupler Tuner to the oscillator without output matching circuit. To design the oscillator for the maximum output power can be done easily with the microstrip line which is realized from the measured S-parameters of Tuner. In compare the oscillator by the existing method with another one by the suggested method in this paper, the first one has 6.45 dBm output power and second one has 9.71 dBm which is 3.26 dBm higher than the first one at the oscillation frequency 1.0338 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.2
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• pp.137-144
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• 2008

In this paper, a novel voltage-controlled oscillator(VCO) using the output matching network based on the harmonic control circuit is presented for improving the phase noise property. The phase noise suppression is achieved through the harmonic control circuit having the short impedances for both second-harmonic and third-harmonic components, which has been connected at the output matching network. Also, we have used the microstrip square open loop multiple split-ring resonator(OLMSRR) having the high-Q property to further reduce the phase noise of VCO. Because the output matching network based on the harmonic control circuit has been used for reducing the phase noise property instead of the High-Q resonator, we can obtain the broad tuning range by the low-Q resonator. The phase noise of the proposed VCO using the output matching network based on the harmonic control circuit and the microstrip square OLMSRR has been $-127.5{\sim}126.33$ dBc/Hz @ 100 kHz in the tuning range, $5.744{\sim}5.839$ GHz. Compared with the reference VCO using the output matching network without the harmonic control circuit and the microstrip line resonator, the phase noise property of the proposed VCO has been improved in 26.66 dB.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.569-575
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• 2014

A highly efficient class E power amplifier is demonstrated for application to wireless power transfer system. The amplifier is designed with an L-type matching at the output for harmonic rejection and output matching. The power loss and the effect of each component in the amplifier with the matching circuit are analyzed with the current ratio transmitted to the output load. Inductors with a quality factor of more than 120 are used in a dc feed and the matching circuit to improve transmission efficiency. The single-ended amplifier with 20 V supply voltage shows 7.7 W output power and 90.8% power added efficiency at 6.78 MHz. The wireless power transfer (WPT) system with the amplifier shows 5.4 W transmitted power and 82.3% overall efficiency. The analysis and measurements show that high-Q inductors are required for the amplifier design to realize highly efficient WPT system.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.11
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• pp.1686-1696
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• 2022

The impedance matching circuit design technique based on the phasor plot introduced in this paper is based on the impedance triangle of electric circuit. It is a technique that designs through the construction of a phasor figure using the values given to the matching circuit design. The design pattern is based on L-type, inverted L-type, T-type, and 𝜋-type, and unknown reactance elements are determined through phasor shapes. In this paper, using a design by phasor plot, we design several cases, such as the case where the input and output ports are pure resistance and have reactance. It was confirmed that the design value was verified by serial-parallel equivalent conversion to achieve matching. This design technique can immediately grasp the phase or size of input/output power, so it is expected to be applied mainly in a low frequency band due to rapid design change and application.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.2
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• pp.141-146
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• 2009

In this paper, a novel harmonic control circuit has been proposed for the design of high-efficiency power amplifier with Si LDMOSFET. The proposed harmonic control circuit haying the short impedances for the second- and third-harmonic components has been used to design the in/output matching network. The efficiency enhancement effect of the proposed harmonic control circuit is superior to the class-F or inverse class-F harmonic control circuit. Also, when the proposed harmonic control circuit has been adapted to the input matching network as well as the output matching network, the of ficiency enhancement effect of the proposed power amplifier has increased all the more. The measured maximum power added efficiency (PAE) of the proposed power amplifier is 82.68% at 1.71GHz band. Compared with class-F and inverse class-F amplifiers, the measured maximum PAE of the proposed power amplifier has increased in $5.08{\sim}9.91%$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.4
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• pp.323-331
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• 1997

In this paper, the high efficiency balanced amplifier is presented as high efficiency power amplifier. This amplifier is basically composed of two FETs, an input power divider, output power combiner, input matching circuits, output matching circuits, second harmonic interconnection circuit and lowpass filter. The second harmonic interconnection circuit is composed of second harmonic frequency bandpass filter and transmission line. This circuit is inserted between the output terminals of the two FEF's output matching circuit, there is a second harmonic standing wave generated between two FET outputs. The electric wall termination is equivalent to the short circuit termination. As a result, the FET output termination condition needed to attain high efficiency is realized. Experimental high efficiency balanced amplifier is constructed to determine its practically attainable efficiency. The input VSWR is 1.27, and the output VSWR is 1.18. Power added efficiency of 75% is attained at 1.75 GHz band about 3W to balanced amplifier.

• ETRI Journal
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• v.28 no.3
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• pp.355-363
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• 2006

This paper presents a low-cost RF parameter estimation technique using a new RF built-in self-test (BIST) circuit and efficient DC measurement for 4.5 to 5.5 GHz low noise amplifiers (LNAs). The BIST circuit measures gain, noise figure, input impedance, and input return loss for an LNA. The BIST circuit is designed using $0.18\;{\mu}m$ SiGe technology. The test technique utilizes input impedance matching and output DC voltage measurements. The technique is simple and inexpensive.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2729-2734
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• 2011

In this paper, an active replica Low-dropout(LDO) regulator with DC voltage matching circuit is presented. In order to match the voltage between replica and output of regulator, DC voltage matching circuit is designed. The active replica low dropout regulator has higher Power Supply Rejection(PSR) than that of conventional regulator. The designed DC voltage matching circuit can reduce the drawback that may be occurred in replica regulator. And using fully active element in regulator can reduce the chip area and heat noise with resistor. As results of HSPICE simulation with 0.35um CMOS parameter, the designed active replica LDO regulator achieves Power Supply Rejection, -28@10Hz better than -17@10Hz of conventional replica regulator without DC matching circuit. And the output voltage is 3V.

• Proceedings of the Korean Information Science Society Conference
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• 2004.04a
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• pp.952-954
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• 2004

We've developed a Boolean circuit that finds a maximum matching in a convex bipartite graph. This circuit is designed in BC language that was created by K. Park and H. Park(1). The depth of the circuit is O(log$^2$nㆍlog b) and the size is O(bn$^3$). Our circuit gets a triple representation of a convex bipartite graph as its input and produces the maximum matching for its output. We developed some Boolean circuit design techniques that can be used for building other Boolean circuits.

• ETRI Journal
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• v.27 no.5
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• pp.569-578
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• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.