• Title/Summary/Keyword: Oscillation frequency

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Implementation of High Stable Phase-Locked Oscillator for X-Band Satellite Communication (X-Band 위성통신을 위한 고안정 위상 동기 발진기 구현)

  • Lim, Jin-Won;Joung, In-Ki;Rhee, Young-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.9
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    • pp.967-973
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    • 2009
  • In this paper, X-band satellite communication oscillator of double phase locked is implemented by constructing a couple of phased-locked loop, and then we have analyzed the phase noise of designed PLL-DRO. The designed phase-locked oscillator is consist of series feedback DRO, frequency divider, phase detector, loop filter and programmable PLL-IC. By dividing oscillation frequency of 12.6 GHz into two frequencies, it exhibits output power of 15.32 dBm at 6.3 GHz. Phase noises of implemented oscillator are -81 dBc/Hz@100Hz, -100.86 dBc/Hz@1 kHz, -111.12 dBc/Hz@10 kHz, -116 dBc/Hz@100 kHz and -140.49 dBc/Hz@1 MHz respectively. These indicate excellent stable operation of oscillator and very good phase noise characteristics.

Fabrication and characterization of the SiGe HBTs using an RPCVD (RPCVD를 이용한 실리콘 게르마늄 이종 접합 바이폴라 트랜지스터 제작 및 특성 분석)

  • 한태현;서광열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.823-829
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    • 2004
  • In this paper, non-self-aligned SiGe HBTs with ${f}_\tau$ and${f}_max $above 50 GHz have been fabricated using an RPCVD(Reduced Pressure Chemical Vapor Deposition) system for wireless applications. In the proposed structure, in-situ boron doped selective epitaxial growth(BDSEG) and TiSi$_2$ were used for the base electrode to reduce base resistance and in-situ phosphorus doped polysilicon was used for the emitter electrode to reduce emitter resistance. SiGe base profiles and collector design methodology to increase ${f}_\tau$ and${f}_max $ are discussed in detail. Two SiGe HBTs with the collector-emitter breakdown voltages ${BV}_CEO$ of 3 V and 6 V were fabricated using SIC(selective ion-implanted collector) implantation. Fabricated SiGe HBTs have a current gain of 265 ∼ 285 and Early voltage of 102 ∼ 120 V, respectively. For the $1\times{8}_\mu{m}^2$ emitter, a SiGe HBT with ${BV}_CEO$= 6 V shows a cut-off frequency, ${f}_\tau$of 24.3 GHz and a maximum oscillation frequency, ${f}_max $of 47.6 GHz at $I_c$of 3.7 mA and$V_CE$ of 4 V. A SiGe HBT with ${BV}_CEO$ = 3 V shows ${f}_\tau$of 50.8 GHz and ${f}_max $ of 52.2 GHz at $I_c$ of 14.7 mA and $V_CE$ of 2 V.

Growth of AlN/GaN HEMT structure Using Indium-surfactant

  • Kim, Jeong-Gil;Won, Chul-Ho;Kim, Do-Kywn;Jo, Young-Woo;Lee, Jun-Hyeok;Kim, Yong-Tae;Cristoloveanu, Sorin;Lee, Jung-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.5
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    • pp.490-496
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    • 2015
  • We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to $1070^{\circ}C$, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of $800^{\circ}C$ exhibited best Hall measurement results; such as sheet resistance of $215{\Omega}/{\Box}$electron mobility of $1430cm^2/V{\cdot}s$, and two-dimensional electron gas (2DEG) density of $2.04{\times}10^{13}/cm^2$. The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of $0.2{\mu}m$ exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.

Analysis of PHEMT's Characteristics by Gate Recesses (게이트 리세스 식각 방법에 따른 PHEMT 특성 분석)

  • 임병옥;이성대;김성찬;설우석;신동훈;이진구
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.644-650
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    • 2003
  • In this paper, we have studied characteristics of PHEMT's fabricated by two difference types of gate recess for improving performance of the device in millimeter wave applications. PHEMT's were fabricated using wide and narrow recesses. Maximum transconductance(g$_{m}$) of PHEMT's using the wide recess was 332.7 mS/mm, and that of PHEMT's using narrow recess was 504.6 mS/mm. From small signal performance measurements, cutoff frequency(f$_{T}$) and maximum stable oscillation frequency(f$_{max}$) of PHEMT's using wide recess were 113 GHz and 172 GHz, respectively. f$_{T}$ and f$_{max}$ of PHEMT using narrow recess were 101 GHz and 142 GHz, respectively. The measured data of the fabricated PHEMTs' were carefully studied and analyzed.d.tudied and analyzed.

On Implementation of the Finite Difference Lattice Boltzmann Method with Internal Degree of Freedom to Edgetone

  • Kang, Ho-Keun;Kim, Eun-Ra
    • Journal of Mechanical Science and Technology
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    • v.19 no.11
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    • pp.2032-2039
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    • 2005
  • The lattice Boltzman method (LBM) and the finite difference-based lattice Boltzmann method (FDLBM) are quite recent approaches for simulating fluid flow, which have been proven as valid and efficient tools in a variety of complex flow problems. They are considered attractive alternatives to conventional finite-difference schemes because they recover the Navier-Stokes equations and are computationally more stable, and easily parallelizable. However, most models of the LBM or FDLBM are for incompressible fluids because of the simplicity of the structure of the model. Although some models for compressible thermal fluids have been introduced, these models are for monatomic gases, and suffer from the instability in calculations. A lattice BGK model based on a finite difference scheme with an internal degree of freedom is employed and it is shown that a diatomic gas such as air is successfully simulated. In this research we present a 2-dimensional edge tone to predict the frequency characteristics of discrete oscillations of a jet-edge feedback cycle by the FDLBM in which any specific heat ratio $\gamma$ can be chosen freely. The jet is chosen long enough in order to guarantee the parabolic velocity profile of a jet at the outlet, and the edge is of an angle of $\alpha$=23$^{o}$. At a stand-off distance w, the edge is inserted along the centerline of the jet, and a sinuous instability wave with real frequency is assumed to be created in the vicinity of the nozzle exit and to propagate towards the downstream. We have succeeded in capturing very small pressure fluctuations resulting from periodic oscillation of the jet around the edge.

L-band Voltage Controlled Oscillator for Ultra-Wideband System Applications (초광대역 응용 시스템을 위한 L밴드 전압제어발진기 설계)

  • Koo Bonsan;Shin Guem-Sik;Jang Byung-Jun;Ryu Keun-Kwan;Lee Moon-Que
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.9
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    • pp.820-825
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    • 2004
  • In this paper an octave tuning voltage controlled oscillator which is used in set-top TV tuner was designed. Oscillation frequency range is 0.9 GHz~2.2 GHz with 1.3 GHz bandwidth. By using 4 varactor diodes in base and emitter of transistor, wide-band tuning, sweep linearity and low phase noise could be achieved. Designed VCO requires a tuning voltage of 0 V ~ 20 V and DC consumption of 10 V and 15 mA. Designed VCO exhibits an output power of 5.3 dBm $\pm$1.1 dB and a phase noise below -94.8 dBc/Hz @ 10 kHz over the entire frequency range. The sweep linearity shows 65 MHz/V with a deviation of $\pm$10 MHz.

Fabrication of GaN Transistor on SiC for Power Amplifier (전력증폭기용 SiC 기반 GaN TR 소자 제작)

  • Kim, Sang-Il;Lim, Byeong-Ok;Choi, Gil-Wong;Lee, Bok-Hyung;Kim, Hyoung-Joo;Kim, Ryun-Hwi;Im, Ki-Sik;Lee, Jung-Hee;Lee, Jung-Soo;Lee, Jong-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.2
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    • pp.128-135
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    • 2013
  • This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density of 837 mA/mm and peak transconductance of 177 mS/mm. A unity current gain cutoff frequency was 45.6 GHz and maximum frequency of oscillation was 46.5 GHz. The reported output power density was 1.54 W/mm and A PAE(Power Added Efficiency) was 40.24 % at 9.3 GHz.

Spectral analysis of brain oscillatory activity (뇌파의 주파수축 분석법)

  • Min, Byoung-Kyong
    • Korean Journal of Cognitive Science
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    • v.20 no.2
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    • pp.155-181
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    • 2009
  • Psychophysiologists are often interested in the EEG signals that accompany certain psychological events. When one is interested in a time series of event-related changes in EEG, one focuses on examining how the waveforms recorded at individual electrode sites vary over time across one or more experimental conditions. This is an analysis of event-related potentials (ERPs). In addition to such a classical EEG analysis in the time domain, the EEG measures can be investigated in the frequency domain. Moreover, it has been demonstrated that spectral analyses can often yield significant insight into the functional cognitive correlations of the signals. Therefore, this review paper tries to summarize essential concepts (e.g. phase-locking) and conventional methods (e.g. wavelet transformation) for understanding spectral analyses of brain oscillatory activity. Phase-coherence is also introduced in relation to functional connectivity of the brain.

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An Experimental Study on Convection Heat Transfer in an Oscillating Flow of a Heater Tube for Stirling Cycle Machines (스터링 사이클기기용 가열기 원관내부 왕복유동에서의 열전달에 관한 실험적 연구)

  • 강병하;이건태;이춘식;이재헌
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.17 no.6
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    • pp.1547-1555
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    • 1993
  • An experimental study on convection heat transfer characteristics from a heated tube to an oscillating flow has been carried out, . This problem is of particular interest in the design of heat exchangers in Stirling cycle machines. Experimental system has been developed to measure temporal variations of temperature inside a heater tube during oscillating modes in a Stirling cycle machine. The dependence of temperature distributions and heat transfer rates on the oscillating frequency as well as the swept volume ratio and the mean pressure of a Stirling cycle machine is investigated in detail. The experimental results indicate that the measured temporal variations of temperature become nearly sinusoidal. The amplitude of temperature variation in the core of the tube is much more substantial than that near the tube wall, whereas the reverse is true for pulsating flows. It is also found that the heat transfer rate is increased significantly as the oscillating frequency or oscillating amplitude or the mean pressure in a tube is increased.

A Combustion Characteristics of Attached Jet Flame under the Regular Oscillation (규칙적인 진동 하에서 노즐 부착된 제트화염의 연소특성)

  • Kim, Dae-Won;Lee, Kee-Man
    • Fire Science and Engineering
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    • v.23 no.1
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    • pp.55-62
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    • 2009
  • A general combustion characteristics of forcing nonpremixed jet in laminar flow rates have been conducted experimentally to investigate the effect of forcing amplitude with the resonant frequency of fuel tube. There are two patterns of the flame lift-off feature according to the velocity increasing; one has the decreasing values of forcing amplitude on the lift-off occurrence when a fuel exit velocity is increasing, while the other has the increasing values. These mean that there are the different mechanisms in the lift-off stability of forced jet diffusion flame. Especially, the characteristics of attached jet flame regime are concentrically observed with flame lengths, shapes, flow response and velocity profiles at the nozzle exit as the central figure. The notable observations are that the flame enlogation, in-homing flame and the occurrence of a vortical motion turnabout have happened according to the increase of forcing amplitude. It is understood by the velocity measurements and visualization methods that these phenomena have been relevance to an entrainment of surrounding oxygen into the fuel nozzle as the negative part of the fluctuating velocity has begun at the inner part of the fuel nozzle.