JSTS:Journal of Semiconductor Technology and Science

  • 제15권5호
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  • Pages.490-496
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  • 2015
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
The Institute of Electronics and Information Engineers (대한전자공학회)
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Growth of AlN/GaN HEMT structure Using Indium-surfactant

  • Kim, Jeong-Gil (School of Electronics Engineering, Kyungpook National University) ;
  • Won, Chul-Ho (School of Electronics Engineering, Kyungpook National University) ;
  • Kim, Do-Kywn (School of Electronics Engineering, Kyungpook National University) ;
  • Jo, Young-Woo (School of Electronics Engineering, Kyungpook National University) ;
  • Lee, Jun-Hyeok (School of Electronics Engineering, Kyungpook National University) ;
  • Kim, Yong-Tae (Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology) ;
  • Cristoloveanu, Sorin (Institute of Microelectronics, Electromagnetism and Photonics, Grenoble Polytechnic Institute) ;
  • Lee, Jung-Hee (School of Electronics Engineering, Kyungpook National University)
  • 투고 : 2015.04.17
  • 심사 : 2015.06.26
  • 발행 : 2015.10.30
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초록

We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to $1070^{\circ}C$, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of $800^{\circ}C$ exhibited best Hall measurement results; such as sheet resistance of $215{\Omega}/{\Box}$electron mobility of $1430cm^2/V{\cdot}s$, and two-dimensional electron gas (2DEG) density of $2.04{\times}10^{13}/cm^2$. The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of $0.2{\mu}m$ exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.

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참고문헌

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