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http://dx.doi.org/10.5515/KJKIEES.2013.24.2.128

Fabrication of GaN Transistor on SiC for Power Amplifier  

Kim, Sang-Il (Samsung Thales)
Lim, Byeong-Ok (Samsung Thales)
Choi, Gil-Wong (Samsung Thales)
Lee, Bok-Hyung (Samsung Thales)
Kim, Hyoung-Joo (Samsung Thales)
Kim, Ryun-Hwi (Department of Electronic Engineering, Kyung-Pook National University)
Im, Ki-Sik (Department of Electronic Engineering, Kyung-Pook National University)
Lee, Jung-Hee (Department of Electronic Engineering, Kyung-Pook National University)
Lee, Jung-Soo (Agency for Defence Development)
Lee, Jong-Min (Agency for Defence Development)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.24, no.2, 2013 , pp. 128-135 More about this Journal
Abstract
This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density of 837 mA/mm and peak transconductance of 177 mS/mm. A unity current gain cutoff frequency was 45.6 GHz and maximum frequency of oscillation was 46.5 GHz. The reported output power density was 1.54 W/mm and A PAE(Power Added Efficiency) was 40.24 % at 9.3 GHz.
Keywords
GaN; MISHFET; MOCVD; Power Amplifier; SiC;
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