Fabrication and characterization of the SiGe HBTs using an RPCVD |
한태현
(광운대학교 전자재료공학과)
서광열 (광운대학교 전자재료공학과) |
1 |
A 200 mm SiGe-HBT technology for wireless and mixed-siganl applications
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2 |
Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
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3 |
SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems
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DOI ScienceOn |
4 |
A high-per-formance epitaxial SiGe-base ECL BiCMOS technology
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5 |
Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter ans rapid vapor-phase doping base
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DOI ScienceOn |
6 |
Interface controlled IDP processes technology for 0.3<TEX>${\mu}m$</TEX> high-speed bipolar and BiCMOS LSIs
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7 |
Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBTs
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DOI ScienceOn |