The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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Fabrication of GaN Transistor on SiC for Power Amplifier

전력증폭기용 SiC 기반 GaN TR 소자 제작

  • Received : 2012.12.26
  • Accepted : 2013.01.22
  • Published : 2013.02.28
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Abstract

This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density of 837 mA/mm and peak transconductance of 177 mS/mm. A unity current gain cutoff frequency was 45.6 GHz and maximum frequency of oscillation was 46.5 GHz. The reported output power density was 1.54 W/mm and A PAE(Power Added Efficiency) was 40.24 % at 9.3 GHz.

본 논문에서는 Si가 도핑된 Modulation-doped AlGaN/GaN 이종 접합 구조를 가지는 전력증폭기용 MISHFET 소자를 제작하였다. 제작된 GaN TR 소자는 6H-SiC(0001)의 Substrate 위에 성장시켰으며, 180 nm의 gate length를 가진다. 제작된 소자를 측정한 결과, 837 mA/mm의 최대 드레인 전류 특성, 177 mS/mm의 $g_m$(Tranconductance)을 가지며, $f_T$는 45.6 GHz, $f_{MAX}$는 46.5 GHz로 9.3 GHz에서 1.54 W/mm의 전력 밀도와 40.24 %의 PAE를 가지는 것으로 확인되었다.

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References

  1. 문재경, 배성범, 장우진, 임종원, 남은수, "GaN 전자소자 글로벌 연구개발 동향", 전자통신동향 분석, 27(1), pp. 74-85, 2012년 2월.
  2. V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. AsifKhan, and Ilesanmi Adesida, "AlGaN/GaN HEMTs on SiC with fT of over 120 GHz", IEEE Electron Device Letters, vol. 23, No. 8, Aug, 2002.
  3. 문재경, 민병규, 김동영, 장우진, 김성일, 강동민, 남은수, "차세대 고효율/고출력 반도체: GaN 전력소자 연구개발 현황", 전자통신동향분석, 27 (4), pp. 96-106, 2012년 8월.
  4. Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, Eric Feltin, Jean-Francois Carlin, Marcus Gonschorek, Nicolas Grandjean, and C. R. Bolognesi, "100-nm-Gate(Al, In) N/GaN HEMTs Grown on SiC with fT=144 GHz", IEEE Electron Device Letters, vol. 31, no. 4, Apr. 2010.
  5. P. Waltereit, O. Brandt, A. Trampert, M. Ramsteiner, M. Reiche, M. Qi, and K. H. Ploog, "Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H-SiC(0001)", Appl. Phys. Lett., vol. 74, pp. 3660-3662, 1999. https://doi.org/10.1063/1.123214
  6. R. Gaska, M. S. Shur, A. D. Bykhovski, A. O. Orliv, and G. L. Snider, "Electron mobility in modulation- doped AlGaN-GaN heterostructures", Appl. Phys. Lett., vol. 74, pp. 287-289, 1999. https://doi.org/10.1063/1.123001
  7. L. F. Lester, J. M. Brown, J. C. Ramer, L. Zhang, and S. D. Hersee, "Non alloyed Ti/Al ohmic contacts to n-type GaN using high-temperature premetallization anneal", Appl. Phys. Lett., vol. 69, pp. 2737-2739, 1996. https://doi.org/10.1063/1.117695
  8. B. P. Luter, S. E. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Yang, "Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN", Appl. Phys. Lett., vol. 70, pp. 57, 1997. https://doi.org/10.1063/1.119305
  9. Y. F. Wu, W. N. Jiang, B. P. Keller, S. Keller, D. Kapolnek, S. P. Denbaars, U. K. Mishra, and B. Wilson, "Low resistance ohmic contact to n-GaN with a separate layer method", Solid-State Electron, vol. 41, pp. 165-168, Feb, 1997. https://doi.org/10.1016/S0038-1101(96)00151-7
  10. V. Desmaris, J. Eriksson, N. Rorsman, and H. Zirath, "Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contact to undoped AlGaN/GaN heterosturctures", Electrochemical and Solid-state Lett., vol. 7, pp. 72-74, 2004. https://doi.org/10.1149/1.1649399
  11. V. Desmaris, J. Y. Shiu, C. Y. Lu, N. Rorsman, H. Zirath, and E. Y. Chang, "Transmission electron microscopy assessment of the Si enhancement of Ti/Al/ Ni/Au ohmic contacts to undoped AlGaN/ GaN heterostructures", Journal of Applied Physics, 100, 034904, 2006. https://doi.org/10.1063/1.2218262