• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.358-364
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• 2009

We investigated the growth of ZnO thin films with prominent emission characteristics through minimizing the formation of defects by using pulsed laser deposition (PLD). To do so, the ZnO films were deposited on sapphire(0001) substrates at the substrate temperature of $400-850^{\circ}C$ and then the variation of their structural and optical properties were analyzed by x-ray diffraction, atomic force microscope and photoluminescence. As a result, all ZnO films were grown with c-axis preferential orientation irrespective of the substrate temperature. However, the crystallinity and stress state were dependent on the substrate temperature and the ZnO film deposited at $600^{\circ}C$ showed the best surface morphology and crystallinity with nearly no strain. And also this film exhibited outstanding emission characteristics from the viewpoint of full width half maximum of UV emission peak as well as visible emission due to defects. These results indicate that the emission characteristics of the ZnO films are strongly related to their structural characteristics influenced by substrate temperature. Consequently, ZnO films with strong UV emission and nearly no visible emission, which are applicable to UV emission devices, could be grown at the substrate temperature of $600^{\circ}C$ by PLD.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.489-492
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• 2005

We report new polymer stabilized ferroelectric liquid crystal (PSFLC) cells with mechanical stability which is achievable by introducing photospacers in the cells. It was found that the mechanical st ability of the PSFLC cell was effected by introduction of photo spacers. We analyzed the dependence of mechanical stability and memory property on the density of photospacers in the PSFLC cell. The stability and memory properties of PSFLC Cells depending on photospacer density are discussed. 1. Introduction Recently, flexible displays have attracted much attention because they have remarkable advantages: thinner, lighter, non-breakable and conformable features. Flexible displays have various potential applications such as e-book and e-paper displays utilizing the distinct features. E-book and E-paper displays demand very low power consumption, so that bistable memory liquid crystal modes are required in case of flexible plastic LCDs for those application. Three kinds of memory LC modes have been developed; bistable nematic, bistable cholesteric and bistable FLC. Among them SSFLC as one of bistable FLC has big advantages such as low driving voltage, wide view angle and fast response time, SSFLC cells are, however, very weak against mechanical shock. Polymer stabilized FLC (PSFLC) has been developed to overcome the poor mechanical stability of SSFLC. PSFLC was known to have network structure that FLCs are oriented with smectic layer ordering in polymer network. The polymer network stabilizes the FLC orientation, which leads to improvement of mechanical stability of PSFLCD. A lot of studies have been done for the application of PSFLC to flexible $LCDs.^{[1{\sim}12]}$ However, it should be noted that PSFLC does not have sufficient mechanical stability for the particular applications such as smart card LCD, where LCD is highly bendable.Bead spacer was mainly used to maintain cell gap of conventional PSFLCDs. But the spacer density of it is not locally uniform in the cell, so that it is generally difficult that the PSFLCDs with bead spacers show sufficient mechanical stability. In order to more improve the mechanical stability of PSFLCDs, we introduced photospacers into PSFLCDs. In this paper, we describe the improvement of mechanical stability by introducing photospacers into PSFLCDs.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• The Journal of the Petrological Society of Korea
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• v.16 no.1 s.47
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• pp.12-26
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• 2007

We have studied orientational characteristics of vertical rift and grain planes developing in 108 quarries for Mesozoic granites. Orientations of these planes vary in different localities. In general, orientations of these planes are predominantly NNE in South Korea. From the regional distribution chart, orientations of these planes show three dominant sets in terms of frequency orders: (1) $N2{\sim}10^{\circ}E(1st-order),\;(2)\;N15{\sim}25^{\circ}E(2nd-order),\;(3)\;N45{\sim}70^{\circ}E,\;N10{\sim}30^{\circ}W\;and\;N70{\sim}80^{\circ}W(3rd-order)$. These granite quarries are classified by the relative difference in the easiness of rock splitting between horizontal and vertical quarrying planes into: R-type, G-type, and H-type. The results showed that quarries for Triassic granites belong to R and G-types;those for Jurassic granites belong to R, G and H-types. In addition, quarries for Cretaceous granites belong mainly to R-type. Among these quarry types, the most diverse type was identified in the quarries for Jurassic granites. R-type (77.8%) shows a higher distribution ratio compared with G and H-types (22.2%). In general, anisotropy of physical properties is found in granitic rocks and there exists close correlation between orientations of granitic rock splitting planes and those of the open microcracks. Meanwhile, it has been reported that preferred orientations of open microcracks suggest maxinum principal stress orientations.

• The Korean Journal of Physiology
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• v.20 no.2
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• pp.225-235
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• 1986

Effects of anions on p-Aminohippurate (PAH) transport across the basolateral membrane (BLM) were studied. Basolateral membrane vesicles were isolated from rabbit renal cortex by using a self-orienting Percoll-gradient centrifugation and $Mg^{2+}-precipitation$. The characteristics of the membrane vesicles was examined by marker enzyme activity, membrane orientation and transport studies. The Na-K-ATPase activity in the fraction containing BLM vesicles was enriched 9·fold, and the alkaline phosphatase activity in the fraction containing BBM vesicles was increased 9-fold, compared with those of the homogenate. The transport properties of the two membrane preparations were studied by a rapid filtration technique. The uptake of PAH by BLM was sensitive to changes in medium osmolarity and inhibited by probenecid. When the uptake of $50{\mu}M$ PAH in voltage-clamped BLM vesicles was determined in the presence of various anions in the incubation medium, cis inhibitions by $SO_4\;and\;SSO_3$ were observed in the presence of sodium gradient (out>in). Sodium-dependent PAH uptake was inhibited competitively by external $SO_4$ PAH uptake in BLM vesicles loaded with 20 mM acetate and $SO_4\;or\;200\;{\mu}M$ PAH was significantly stimulated as compared with unloaded vesicles. The extent of trans-stmulation of PAH uptake by $SO_4$. was increased with the inside concentration of $SO_4$. This trans-stimulatory effect by $SO_4$, was observed to be additive in the presence of Na gradient and completely inhibited by 2 mM probenecid and 1 mM SITS. These results demonstrate that PAH/anion exchange is present in BLM of renal cortex and in this exchange mechanism inorganic as well as organic anions are involved as substrates.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.1-6
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• 2010

We report on the electrical properties of Ti/Al/Ni/Au (20 nm/ 150 nm/ 30 nm/ 100 nm) Ohmic contacts and the anisotropic conductivity of n-type ${\alpha}$-plane ([11-20]) GaN grown on $\gamma$-plane ([1-102]) sapphire substrates. The Ti/Al/Ni/Au Ohmic contacts and their sheet resistances are characterized by using the transfer length method (TLM) as a function of azimuthal angles. It is found that the specific contact resistance does not depend on the axis orientation and there are significant electrical anisotropy in ${\alpha}$-plane GaN films on $\gamma$-plane sapphire substrates, and the sheet resistance varies with azimuthal angles. The sheet resistance values in the direction parallel to m-axis [1-100] are 25% ~ 75% lower than those parallel to c-axis [0001] directions. Thus, Basal stacking faults (BSFs) are offered as a feasible source of the anisotropic mobility in defected m-axis direction because the band-edge discontinuities owing to the differential band gap structure.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.30 no.3 s.47
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• pp.295-305
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• 2004

Colloid and surface chemistry have been focused on surface area and surface energy. Local surface properties such as surface density, interaction, molecular orientation and reactivity have been one of interesting subjects. Systems of such surface energy being important would be listed as association colloid, emulsion, particle dispersion, foam, and 2-D surface and film. Such nanoparticle systems would be applied to drug delivery systems and functional cosmetics with biocompatible and degradable materials, while nanoparticles having its size of several nm to micron, and wide surface area, have been accepted as a possible drug carrier because their preparation, characteristics and drug loading have been inves-tigated. The biocompatible carriers were also used for the solubilization of insoluble drugs, the enhancement of skin absorption, the block out of UV radiation, the chemical stabilization and controlled release. Nano/micro emulstion system is classified into nano/microsphere, nano/microcapsule, nano/microemulsion, polymeric micelle, liposome according to its prep-aration method and size. Specially, the preparation method and industrial applications have been introduced for polymeric micelles self-assembled in aqueous solution, nano/microapsules controlling the concentration and activity of high concen-tration and activity materials, and monolayer or multilayer liposomes carrying bioactive ingredients.