• 한국결정성장학회지
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• 제12권6호
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• pp.283-287
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• 2002

초고집적 반도체 회로에서 Cu를 배선으로 쓰이기 위한 Cu 금속과 Si 기판사이의 확산방지막으로써 Zr(Si)N 박막을 연구하였다. Zr(Si)N 박막증착은 DC magnetron sputter으로 $Ar/N_2$의 혼합 gas를 사용한 reactive sputtering 방법을 이용하였다. 상온에서 ZrN 박막 증착시 Ar gas와 NE gas 비율이 48 : 2일 때 가장 낮은 비저항값을 가졌으며, 증착시 기판의 온도의 증가에 따라서 비저항값이 낮아졌다. 비저항값이 감소된 ZrN 박막일수록 (002)면의 방향성을 갖는 결정이 성장되었다. ZrN 박막의 Cu 확산방지 특성은 ZrN 박막에 Si을 첨가함으로써 개선될 수 있으며 지나치게 첨가될 경우에는 오히려 확산방지 특성이 감소되었다. 접착력 특성에서는 ZrN에 Si의 함유량이 증가함에 파라 개선되었다. 증착막의 특성은 XRD, 광학 현미경, scretch tester 그리고 $\alpha$-step 등을 사용하여 분석하였다.

• 한국재료학회지
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• 제31권8호
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• pp.471-479
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• 2021

The electrochemical reaction between lead borate glass frit doped with Sn metal filler and Ni-Cr wire of a J-type resistor during a term of Joule heating is investigated. The fusing behavior in which the Ni-Cr wire is melted is not observed for the control group but measured for the Sn-doped specimen under 30 V and 500 mA. The Sn-doped lead borate glass frit shows a fusing property compared with other metal-doped specimens. Meanwhile, the redox reaction significantly contributes to the fusing behavior due to the release of free electrons of the metal toward the glass. The electrons derived from the glass, which used Joule heat to reach the melting point of Ni-Cr wire, increase with increasing corrosion rate at interface of metal/glass. Finally, the confidence interval is 95 ± 1.95₉ %, and the adjusted regression coefficient, R in the optimal linear graph, is 0.93, reflecting 93% of the data and providing great potential for fusible resistor applications.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• 한국안광학회지
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• 제12권1호
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• pp.17-22
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• 2007

Ti-나프텐산염과 금속을 출발원료로 사용하고, 스핀코팅-열분해법을 이용하여 실리카 유리위에 박막을 제조하였다. 도포된 박막은 $500^{\circ}C$ 공기에서 10min동안 열처리하였다. 이를 5회 코팅한 박막은 마지막으로 공기에서 $600^{\circ}C$에서 30min으로 하였다. 박막의 특성을 분석하기 위하여 X-선 회절 분석, 전자현미경, UV스펙트럼을 이용하여 분석하였다. 밴드갭에서 가장 큰 장파장 쪽으로 이동은 Fe을 도핑한 $TiO_2$ 박막이었다.

• 한국재료학회지
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• 제15권3호
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• pp.189-194
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• 2005

[ $SiO_2$ ] nanowires were synthesized using the catalyst evaporation method. Grown nanowires had different shapes by kind of used metal catalyst. Mean diameters of grown $SiO_2$ nanowire were about 30 nm. The kind of catalysts affected microstructure of grown $SiO_2$ nanowire because of its typical growth reactions through the liquid state metal catalysts. Optical property were measured by photoluminescence spectroscopy. Relatively broad peak was obtained and mean peak positioned at 450 nm.

• Corrosion Science and Technology
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• 제20권6호
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• pp.361-366
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• 2021

Localized corrosion behavior of Ni-based Inconel 718 alloy was investigated by electrochemical anodic polarization techniques in NACE TM 0177 A solution of 5 wt% NaCl + 0.5 wt% acetic acid at room temperature. After the solution heat treated at 1080 ℃ for 2.5 h, Inconel 718 was age-hardened at 780 ℃ for 8 h. The microstructure of the alloy surface was investigated by optical microscopic or scanning electron microscopic technique. The austenitic phase with the presence of metal carbides was observed on the surface of Inconel 718. Metal-carbides such as Nb-Mo and Ti-carbide with diameters of approximately 10 and 3 ㎛, respectively, were formed in Inconel 718. Anodic polarization results revealed that localized corrosion was observed at the interface between austenitic phase of a substrate and metal carbides. Difference in electrochemical property between a metal carbide and an austenitic substrate could provide an initiation site for localized corrosion of Inconel 718 surface.

• 한국압력기기공학회 논문집
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• 제10권1호
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• pp.82-89
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• 2014

In this study, the metallurgical analysis and mechanical property measurement have been performed to investigate the effect of long-term thermal aging on the microstructural evolution in the fusion boundary region between weld metal and low alloy steel in dissimilar metal welds. A representative dissimilar weld mock-up made of Alloy 690-Alloy 152-A533 Gr. B was fabricated and aged at $450^{\circ}C$ for 2,750 hours. The microstructural characterization was conducted mainly near in a weld root region by using optical microscopy, scanning electron microscopy, transmission electron microscopy. And the mechanical properties were measured with Vickers microhardness test and nanoindentation method. A steep gradient was shown in the chemical composition profile across the interface between A533 Gr. B and Alloy 152. Type-II boundaries were found in weld side of DMW and the hardness was the highest at the narrow zone between Type-II boundary and fusion boundary.

• 한국안광학회지
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• 제7권2호
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• pp.163-167
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• 2002

$Ni(OH)_2/Ni$ Glass 박막에서 전기변색 속도 개선에 대한 연구를 수행하였다. 이는 선글라스의 변색속도가 수분 이상 소요되는 단점을 해결하고자 e-beam evaporator를 이용하여 니켈 금속 박막을 증착시킨 후, 전기화학적 산화-환원 반응으로 $Ni(OH)_2$에 대한 전기변색 특성을 연구하였다. 전기전도성을 갖는 ITO 에서보다 Glass 위에서의 $Ni(OH)_2$의 변색 속도가 오히려 빠르다. 이는 전위와 투과율을 측정함으로서 알 수 있다. XPS를 이용하여 Glass와 $Ni(OH)_2$ 사이의 초박막(${\sim}10{\AA}$) Ni 금속의 존재를 확인하였고, 이 나노 박막은 전기변색 장치의 응답 속도에 영향을 마쳤다. 기존의 선글라스가 5분 정도 소요되는 반면 니켈 나노 박막을 이용한 변색소자에서는 1~2초 정도 소요된다. 이론적으로는 수 ms 이내이지만 전기적 저항으로 인해 초 단위의 응답속도를 보이고 있다.

• 한국레이저가공학회지
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• 제2권2호
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• pp.27-33
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• 1999

Electron beam was applied on the low carbon steel in order to fabricate Metal/Metal GBM(Graded Boundary Material). Ni sheet was placed on the steel substrate. The electron beam was irradiated on the surface and produced a homogeous alloyed layer. Sequential repetition of electron beam treatments for 4 times resulted in 8mm thick graded layer. To determine each layers property, optical microscopy, XRD, microhardness tester and EDS were used. The residual stress was measured by the low angle x-ray diffraction method. The graded boundary layer was stepwise profile, but Ni content incresed up to 80 wt% and Fe content decreased 20 wt% near surface. Each layers microstructure and hardness varied by different Fe/Ni composition. The compressive residual stress was induced by martensite transformation in the 1st and End layers and the shrinkage cracks were formed in graded layer by rapid cooling.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.