Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate
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김좌연
(호서대학교 신소재공학과)
조병철 (호서대학교 신소재공학과) 채상훈 (호서대학교 전자공학과) 김헌창 (호서대학교 화학공학과) 박경순 (세종대학교 신소재공학과) |
1 |
Properties of <TEX>$TaN_x$</TEX> Films as Diffusion Barrier in the Thermally Stable Cu/Si Contact Systems
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2 |
VLSI Thin-Film Technology
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3 |
The Formation of <TEX>$Cu_3Si$</TEX> : Marker Experiments
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DOI ScienceOn |
4 |
Diffusion Barrier Properties of TiW Between Si and Cu
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5 |
Evaluation of Cu Adhesive Energy on Barrier Metals by Means of Contact Angle Measurement
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DOI ScienceOn |
6 |
Tantalum-based Diffusion Barriers in Si/Cu VLSI Metallizations
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DOI |
7 |
Electrochemical Oxidation of ZrN Hard (PVD) Coating Studied by XPS
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DOI |
8 |
ZrN Barrier in Aluminum Metallization Scheme
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DOI |
9 |
Preparation of <TEX>$Cu_{10}Zr_7$</TEX> Intermetallic Compound Fild and its Application as a Diffusion Barrier in <TEX>$Cu/Cu_{10}Zr_7/ZrN/Si$</TEX> Contact System
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DOI |
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