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http://dx.doi.org/10.4313/JKEM.2005.18.10.945

A Study of Properties of GaN and LED Grown using In-situ SiN Mask  

Kim, Deok-Kyu (원광대학교 전기전자 및 정보공학부)
Yoo, In-Sung (원광대학교 전기전자 및 정보공학부)
Park, Choon-Bae (원광대학교 전기전자 및 정보공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.10, 2005 , pp. 945-949 More about this Journal
Abstract
We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.
Keywords
SIN mask; Metal organic chemical vapor deposition (WOCVD); (102) FWHM; TD density; Output power;
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