• 전기학회논문지P
• /
• 제51권3호
• /
• pp.137-141
• /
• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• 한국전자파학회논문지
• /
• 제23권6호
• /
• pp.706-715
• /
• 2012

전자-광학 시그마-델타 변조기는 안테나로부터 수신된 광대역 초고주파 신호를 직접 디지털 신호로 변환하는 디지털 수신기의 핵심 구성품이다. 전자-광학 시그마-델타 변조기는 펄스 레이저와 두 개의 마하-젠더 간섭계(Mach-Zehnder Interferometer: MZI)를 통하여 입력 신호를 초과 샘플링하고, 격자 섬유 누적기(Fiber-Lattice Accumulator: FLA)를 통하여 잡음을 감소시킨다. 고해상도의 출력 신호를 얻기 위해 양자화기 출력에는 데시메이션 필터링 과정이 추가된다. 변조기 설계시 지터는 변조기 입력 신호를 원 신호로 복원하는데 큰 영향을 미치는 요소이다. 본 논문에서는 전자-광학 1차 단일 비트 시그마-델타 변조기의 구현 과정 및 성능을 시뮬레이션을 통하여 분석한다. 전자-광학 시그마-델타 변조기 입력 신호와 출력 신호를 시간 영역에서 분석하고, 복원된 신호에 대하여 비동기 스펙트럼 평균화 방식을 사용하여 주파수 영역의 성능을 분석한다. 지터(Jitter)가 있는 레이저 신호와 지터가 없는 레이저 신호에 대하여 시그마-델타 변조기의 성능을 비교 및 분석하여, 시간 지터가 변조기 성능에 영향을 미치는 지터값을 참고치(펄스 반복 주파수가 100 GHz인 경우, 시간 지터는 100 fs 이하)로서 제시한다. 이러한 지터값은 레이저 생성기 제작시나 변조기 설계시 참고 규격치로 이용된다.

• 전기학회논문지P
• /
• 제58권4호
• /
• pp.451-454
• /
• 2009

The $\beta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $\beta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a\;=\;0.617\;{\AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $\beta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105\;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8\;{\times}\;10^{-2}\;{\Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.

• Journal of the Optical Society of Korea
• /
• 제17권3호
• /
• pp.262-268
• /
• 2013

We study the focusing properties of a two-dimensional square-lattice photonic crystal (PC) comprising silica and germanium partitioned cylinders in air background. The finite difference time domain (FDTD) method with periodic boundary condition is utilized to calculate the dispersion band diagram and the FDTD method incorporating the perfectly matched layer boundary condition is employed to simulate the image formation. In contrast to the common square PCs in which the negative refraction effect occurs in the first photonic band without negative phase propagation, in our suggested model system, the frequency with negative refraction exists in the second band and in near-infrared region. In this case, the wave propagates with a negative phase velocity and the evanescent waves can be supported. We also discuss the dependency of the image resolution and its location on surface termination, source location, and slab thickness. According to the simulation results, spatial resolution of the proposed PC lens is below the radiation wavelength.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제16권6호
• /
• pp.854-859
• /
• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

• 한국자기공명학회논문지
• /
• 제17권2호
• /
• pp.86-91
• /
• 2013

Detailed information about the structural nature of three-coordinate borons in ${\beta}-BaB_2O_4$ is obtained through $^{11}B$ MAS NMR and $^{11}B$ single-crystal NMR. The three-coordinate $BO_3$ of the two borons B(1) and B(2) in ${\beta}-BaB_2O_4$ were distinguished. The spin-lattice relaxation time in the laboratory frame $T_1$ for B(1) and B(2) slowly decreases with increasing temperature, whereas the spin-lattice relaxation time in the rotating frame $T_{1{\rho}}$ for B(1) and B(2), which differs from $T_1$, is nearly constant. The B(1) and B(2) of the two types were distinguished by $^{11}B$ MAS NMR and $^{11}B$ single-crystal NMR.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2002년도 하계학술발표회
• /
• pp.162-163
• /
• 2002

1-D photonic band-gap structure is identified in a cholesteric liquid crystal system. The optical transmission spectrum is measured and compared with the theoretical analysis. Nonlinear transmission is measured near the band edge. Also 3-D photonic band-gap structures are fabricated from dielectric colloidal polystyrene beads through a centrifuge method. The fabricated photonic crystals exhibit opalescent colors under white light and show a clear diffraction peak dependent on the incident angle of the light beam. Also the scanning electron microscope image was taken to verify the face-centered cubic crystal structure. Bragg's law and Snell's law are employed to describe the position of angle resolved diffraction peaks. It was shown that the optically deduced effective refractive index and lattice constants were in good agreement with the crystal structure identified by scanning electron microscope.

• 한국광학회지
• /
• 제13권1호
• /
• pp.27-31
• /
• 2002

본 논문에서는 광자 크리스탈로 구성된 1$\times$4 광 분배기를 설계하여 특성을 Finite-Difference Time-Domain 방법을 사용하여 고찰하였다. Simulation한 결과 bend에서의 4가지 광자 크리스탈 배열 구조와 입사파의 주파수에 따라 투과 특성이 변하는 것을 관찰하였다. 투과 특성이 가장 좋은 bend구조로 1$\times$4광 분배기를 설계하고 특정 주파수를 입사시킨 결과, 입사파의 파워가 4개로 균등히 나누어 짐과 전체 전송 효율이 약 93%임을 관찰하였다.

• 한국전기전자재료학회논문지
• /
• 제21권12호
• /
• pp.1057-1062
• /
• 2008

The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.

• 대한전자공학회논문지
• /
• 제25권4호
• /
• pp.402-406
• /
• 1988

The MgGa2Se4 single crystal for study of optical properties is for the first time grown by Bridgmna method. The crystal structure of grown MgGa2Se4 single crystal has the Rhomobohedral structure (R3m) and its lattice constant are a=3.950\ulcorner c=38.893\ulcornerin Hexagonal structure. The energy band structure of grown MgGa2Se4 single crystal structure has direct band gap and the optical energy gap measured from optical absorption in this crystal is 2.20eV at 290K. The temperature dependence of energy gap was given Eg(T)=Eg(O)-aT\ulcorner)B+T), from varshni equation, where Eg(O)=2.34eV, a=8.79x10**-4eV/and b=250K.