Browse > Article

Optical and Electrical Property of $\beta$-Phases $In_2Te_3$ Single Crystal by Vertical Bridgman Method  

Kim, Nam-Oh (조선이공대학 전기과)
Lee, Kang-Yeon (조선대학교 전기공학과)
Jeong, Byeong-Ho (남부대학교)
Choi, Youn-Ok (조선대학교 전기공학과)
Shin, Hwa-Young (한국전력기술인협회)
Cho, Geum-Bae (조선대학교 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers P / v.58, no.4, 2009 , pp. 451-454 More about this Journal
Abstract
The $\beta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $\beta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a\;=\;0.617\;{\AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $\beta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105\;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8\;{\times}\;10^{-2}\;{\Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.
Keywords
Raman Spectra; Activation Energy; Lattice Constants; Vertical Bridgman Method; $\beta-In_2Te_3$ Single Crystal;
Citations & Related Records
연도 인용수 순위
  • Reference
1 M.A.M. Seyam, "Dielectric relaxation in polycrystalline thin film of $In_2Te_3$", App. Sur. Sci., 181, p.128. 1980
2 R. R. Desai, D. Lakshminarayana, P. B. Patel, P. K. Patel, and C. J. Panchal, "Growth and structural properties of indium sesquitelluride $In_2Te_3$ thin films", Mater. Chemi. Phys., 94, p.308, 2005   DOI   ScienceOn
3 R. Goto, F. Shimojo and K. Hoshino, "Temperature dependence of the microscopic structure of liquid In2Te3 : Ab Initio molecular-dynamics simulation", J. Phys. Soc. Japan, 72, p.320, 2003   DOI   ScienceOn
4 J. J. Pankove, "Optical process in semiconductors" (Dover, NY, 1971), 39
5 M. Emziane, J. C. Berned, J. Ourfelli, H. Essaide, and A. Barreau, "A novel method for preparing $\alpha$-$In_2Te_3$ polycrystalline thin films", Mater. Chemi. Phys. 61, pp.229-236, 1999   DOI   ScienceOn
6 I. J. No, J. S. Lim, P. K. Shin and C. Lee, "Structural, optical and electrical properties of Al doped ZnO thin films prepared by Nd:YAG-PLD technology", Trans. KIEE. 56, 9, 2007
7 N. A. Hegab, M. A. Afifi, A. E. El-Shazly, and A. E. Bekheet, "Effect of annealing on the structure and electrical properties of $In_2Te_3$", J. Mater. Sci., 33, p.2441, 1998
8 J. Nagao and M. Ferhat, "Low temperature electrical properties of $\beta$semiconductors", AIST, MITI, 73. p.14, 1999
9 S. N. Chu. J. C. Park, J. Y. Kwon and H. Y. Lee, " Electrical conduction mechanism of AlN insulator thin film fabricated by reactive sputtering method for the application of MIS device", Trans. KIEE. 56, 4, 2007
10 M. A. Afifi, N. A. Hegab and A. E. Bekheet, "The switching phenomenon in amorphous $In_2Te_3$ thin films", Vacuum, 47, p.265, 1996   DOI   ScienceOn