• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.169-174
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• 2015

In this research, pristine graphene was synthesized using methane ($CH_4$) gas, and N-doped graphene was synthesized using pyridine ($C_5H_5N$) liquid source by chemical vapor deposition (CVD) method. Basic optical properties of both pristine and N-doped graphene were investigated by Raman spectroscopy and XPS (X-ray photoemission spectroscopy), and electrical transport characteristics were estimated by current-voltage response of graphene channel as a function of gate voltages. Results for CVD grown pristine graphene from methane gas show that G-peak, 2D-peak and C1s-peak in Raman spectra and XPS. Charge neutral point (CNP; Dirac-point) appeared at about +4 V gate bias in electrical characterization. In the case of pyridine based CVD grown N-doped graphene, D-peak, G-peak, weak 2D-peak were observed in Raman spectra and C1s-peak and slight N1s-peak in XPS. CNP appeared at -96 V gate bias in electrical characterization. These result show successful control of the property of graphene artificially synthesized by CVD method.

• Proceedings of the KAIS Fall Conference
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• 2000.10a
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• pp.226-229
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• 2000

일반적으로 안경집은 일회적으로 사용하고 버리는 것이라 생각하는 사람이 많다. 안경집을 주로 생산하고 있는 대동사출금형과의 공동 노력으로 다기능성 안경집을 개발한 것을 소개한다. 일상적인 고정관념을 버리면 편리하고 기능성이 높은 제품을 만들 수 있다는 신념으로 개발한 결과 어린이나 젊은이들이 졸아할 문방구 겸용 안경집을 개발할 수 있었다. 완구는 소비자가 일상적으로 많이 접촉하기 때문에 곰팡이나 세균이 서식하지 않도록 항균 세라믹을 이용하여 항균처리하였다. 또한 상온에서 인체에 이로운 원적외선이 방출될 수 있도록 고안하였다. 단순한 색상의 무료함을 줄이기 위하여 어린이나 젊은이들이 좋아하는 상용화된 캐릭터를 사용하여 제품의 다양화를 꾀하였고, 4개의 조각으로 만들어 어린이들이나 젊은이들이 조립할 수 있도록 하여 흥미를 더할 수 있도록 하였다. 또한 소비자들이 선호하는 색을 알아보기 위하여 기존의 안경집을 활용하여 색상성호도 조사를 실시하였다. 젊은층은 자극적이고 화려한 색깔을 선호하는 한편 기성세대는 무난한 색깔을 선호하였다. 또한 콘택트 렌즈를 착용하는 경우에도 안경을 사용하는 경우가 많다. 이 경우 콘택트 렌즈와 안경을 따로 가지고 다녀야 하는 불편이 있다. 이에 착안하여 안경과 콘택트 렌즈를 겸용으로 사용하는 소비자를 위하여 안경과 콘택트 렌즈를 동시에 담을 수 있는 안경집을 개발(실용신안 출원번호:8928)하였다. 이 고안은 콘택트 렌즈를 안경집에 보관하기 위한 것으로 콘택트렌즈가 식염수에 잠겨 보관된 렌즈캡을 안경집내에 별도로 삽입되는 케이스에 수납하도록 구성하여 안경과 함께 콘택트 렌즈를 보관해 휴대하는 안경집 보관용 콘택트 렌즈 케이스에 관한 것으로 이것의 특징은 뚜껑이 열리고 닫히도록 구성된 안경집에 있어서 뚜껑 안쪽에 거울이 마련되고 뚜껑이 연결되는 선단부 안쪽에 끼움홈과 체결홈이 형성된 체결부를 갖는 안경집과 이것에 결합되는 체결구가 마련되어 개폐되는 커버가 형성된 케이스로 구성된다.로 금형설계 및 제작기간을 단축하고자 한다.ere demonstrated in rats after i.c.v., intraperitoneally and orally administration, respectively. The antiepileptical effects by the combination of compounds from ginseng; were compared with the iuluence of Rg1, Rb1, Rc and with the well known antiepileptical drugs such as carbamazepine, valproic acid. The base for the research is obtained by using the WAG/Rij strain (Luijtelaar, Coenen, Kuznetcova), an excellent genetic model for human generalized absence epilepsy. The improving action of gensinosides was effectively demonstrated on the model of electrical kindling of amygdala of WAG/Rij rats with genetically determined absences, and the influences of ginsenosides on the slow wave discharges have also been being investigated. The different characteristics of a kindling process exerted in the sex-different region of the amygdala and demonstrated that the level of sex steroids and content of neurosteroids in amygdaloid tissue ca

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.2C
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• pp.132-140
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• 2007

In this paper, we proposed a new technique to encode and decode the digital hologram. Since the digital hologram (or fringe pattern) is generated by interference of light, it has much different property from natural 2D (2 dimensional) images. First, we acquisite optical-sensed or computer-generated hologram by digital type, and then extract a chrominance component. The extracted digital hologram for coding is separated into segments to use multi-view properties. The segmented hologram shows the similar characteristics with picturing an object with 2D cameras in various point of view. Since fringe pattern is visually observed like as noise, we expect that the fringe pattern has poor coding efficiency. To obtain high efficiency, the segment is transformed with DCT (Discrete Cosine Transform) which resembles hologram generation process with high performance. Each transformed segment passes the 3D scanning process according to time and spatial correlation, and is organized into a video stream. Since the segment which correspond to frame of a video stream consists of the transformed coefficients with wide range of value, it is classified and re-normalized. Finally it is compressed with coding tools. The proposed algorithm illustrated that it has better properties for reconstruction of 16 times higher compression rate than the previous researches.

• Journal of Pharmacopuncture
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• v.4 no.2
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• pp.5-15
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• 2001

This study was carried out for production of neutral antibody to bee venom $(anti-phospholipase\;A_2IgY)$. Hen layings were injected repeatedly with bee venom and phospholipase $A_2$ with Freund's adjuvant. Specific antibody in egg yolk from immunized hen laying was separated, and purified, also immunological characteristics of anti phospholipase $A_2\;IgY$ was invested. The results were summarized as follows: 1. Phospholipase $A_2$ was showed single band at molecular weight 17,000 in SDS-PAGE and bee venom was showed two band at molecular weight 17,000 and under molecular weight 6,500 in SDS-PAGE. 2. During 70 days after hen immunized with bee venom and phospholipase $A_2$, antibodies(anti-bee venom IgY) to bee venom were showed poor ELISA value in egg yolk, but antibodies$(anti-Phospholipase\;A_2IgY)$ to phospholipase $A_2$ in egg yolk were increased ELISA value from 8 days or 15 days and found maximum ELISA value at 42 days. Also after booster at 49 days, ELISA value of anti Phospholipase $A_2\;IgY$ in egg yolk was supported at optical density(O.D) 1.0 level, continuously. 3. Titer of phospholipase $A_2\;IgY$ was showed 1: 32,000. 4. In double immunodiffusion test to phospholipase $A_2$ after double dilution of anti-phospholipase $A_2\;IgY$, only precipitation line was made in 1:1 dilution well of anti-Phospholipase $A_2\;IgY$. But In immunodiffusion test to anti-phospholipase $A_2\;IgY$ after double dilution of phospholipase $A_2$, Precipitation line to 250ul/ml well of phospholipase $A_2$ was showed. In double immunodiffusion test to bee venom(1mg/ml) after double dilution anti-phospholipase $A_2\;IgY$, all well without 1:32 dilution well were showed strong precipitation line. 5. In dot bloting test to anti-phospholipase $A_2\;IgY$ after diluting bee venom(0.5mg/ml), dot bloting color was showed clearly to $1/100(5{\mu}g/ml)$ in bee venom.

• Journal of Conservation Science
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• v.28 no.4
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• pp.343-351
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• 2012

Excavated archaeological iron objects are prevented from being corroded going through desalination which slow down being corroded. However archaeological iron objects are liable to be corroded due to the high ionization tendency even though they are stored in environment restricted from corrosion factors. Iron objects could be deteriorated more than just excavated. Therefore this study investigated about the characteristic of re-corrosion and the effect on objects. In study, archaeological iron nails in storage for 4 years after conservation treatments were tested. Optical microscopy and X-ray photography for appearance, XRD, SEM-EDS, Raman spectroscopy for chemical composition, IC for chloride ions concentration inside iron nails were used. As results, iron nails carried out conservation treatments measured a high concentration of chloride ions after the long storage period. The form of objects were not in good condition such as broken or destroyed when the high chloride ions concentration was detected. In addition, the yellow and red powdery corrosion product were detected on the boundary between corrosion products and substrates and they were identified as akaganeite which is symptom of active corrosion.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.3-10
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• 1993

Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Analytical Science and Technology
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• v.15 no.6
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• pp.502-508
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• 2002

See-through hollow cathode glow discharge cell has been developed for the trace analysis of metal ions. The systems consists of new glow discharge cell improved the cooling system. In the case of previous type of hollow cathode glow discharge cell, it had been utilized for the trace analysis of metal ions but it had a problem that the plasma becomes unstable by air-cooled device. In this study, the modified hollow cathode glow discharge cell has been developed in order to minimize the problem associated with the air-cooled device. thus the stability of the plasma with water-cooling device has been improved and also the higher plasma temperature has been measured. The fundamental characteristics of modified systems have been investigated. And the discharge parameters, such as discharge pressure, material, and diameter of cathode, have been studied to find optimum discharge conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.182-187
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• 2011

In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.442-448
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• 2011

Self-assembled InAs/InAlGaAs quantum dots (QDs) grown on an InP (001) substrate have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The single layer (QD1) and seven stacks (QD2) of InAs/InAlGaAs QDs grown by the conventional S-K growth mode were used. The PL peak at 10 K was 1,320 nm for both QD1 and QD2. As the temperature increases from 10 to 300 K, the PL peaks for QD1 and QD2 were red-shifted in the amount of 178 and 264 nm, respectively. For QD1, the PL decay increased with increasing emission wavelength from 1,216 to 1,320 nm, reaching a maximum decay time of 1.49 ns at 1,320 nm, and then decreased as the emission wavelength was increased further. However, the PL decay time for QD2 decreased continuously from 1.83 to 1.22 ns as the emission wavelength was increased from 1,130 to 1,600 nm, respectively. These PL and TRPL results for QD2 can be explained by the large variation in the QD size with stacking number caused by the phase separation of InAlGaAs.