• Journal of the Computational Structural Engineering Institute of Korea
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• v.27 no.5
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• pp.345-352
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• 2014

In this paper, the CAD data for the optimal shape design obtained by isogeometric shape optimization is directly used to fabricate the specimen by using 3D printer for the experimental validation. In a conventional finite element method, the geometric approximation inherent in the mesh leads to the accuracy issue in response analysis and design sensitivity analysis. Furthermore, in the finite element based shape optimization, subsequent communication with CAD description is required in the design optimization process, which results in the loss of optimal design information during the communication. Isogeometric analysis method employs the same NURBS basis functions and control points used in CAD systems, which enables to use exact geometrical properties like normal vector and curvature information in the response analysis and design sensitivity analysis procedure. Also, it vastly simplify the design modification of complex geometries without communicating with the CAD description of geometry during design optimization process. Therefore, the information of optimal design and material volume is exactly reflected to fabricate the specimen for experimental validation. Through the design optimization examples of elasticity problem, it is experimentally shown that the optimal design has higher stiffness than the initial design. Also, the experimental results match very well with the numerical results. Using a non-contact optical 3D deformation measuring system for strain distribution, it is shown that the stress concentration is significantly alleviated in the optimal design compared with the initial design.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.298-304
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• 2007

We have studied the effect of $N_2$ flow rate on the structural and optical properties of GaN nanorods grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shape nanorods with lateral diameters from 80 to 190 nm with increasing $N_2$ flow rate from 1.1 to 2.0 sccm are obtained. However, the ratio of length (thickness) and compact region increases with increasing $N_2$ flow rate up to 1.7 sccm and then saturate. From the photoluminescence, free exciton transition is clearly observed for GaN nanorods with low $N_2$ flow rate. And the PL peak energies are blue-shifted with decreasing diameter of the GaN nanorods due to size effect. Temperature-dependent photoluminescence spectra for the nanorods with $N_2$ flow rate of 1.7 sccm show an abnormal behavior like "S-shape" with increasing temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.252-257
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• 2000

To investigate the thermal preheating effect of the GaAs substrate exerted on the ZnS epilayers for the first time, ZnS epilayers were grown on the GaAs (100) substrate by hot wall epitaxy. The thermal preheating temperature was $450^{\circ}C$~$660^{\circ}C$. The full width at half maximum values of double crystal rocking curve were the smallest for the ZnS epilayers grown on the GaAs thermally preheated at around both $500^{\circ}C$ and $600^{\circ}C$. However, photoluminescence characteristics of ZnS epilayers were better at $600^{\circ}C$ than at $500^{\circ}C$. Therefore, it was shown that the optimum preheating temperature of the GaAs substrate for the growth of high quality ZnS epilayer was around $600^{\circ}C$. From these experimental results, it was shown that the crystal quality and the PL properties of ZnS epilayers were enhanced for the GaAs substrates thermally preheated at $600^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.186-191
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• 2016

The effects of $Eu^{3+}$ doping on the structural, morphological, and optical properties of $MgMoO_4:Dy^{3+},Eu^{3+}$ phosphors prepared by solid-state reaction technique were investigated. XRD patterns exhibited that all the synthesized phosphors showed a monoclinic system with a dominant (220) diffraction peak, irrespective of the content of $Eu^{3+}$ ions. The surface morphology of $MgMoO_4:Dy^{3+},Eu^{3+}$ phosphors was studied using scanning electron microscopy and the grains showed a tendency to agglomerate as the content of $Eu^{3+}$ ions increased. The excitation spectra of the phosphor powders were composed of a strong charge transfer band centered at 294 nm in the range of 230~340 nm and two intense peaks at 354 and 389 nm, respectively, arising from the $^6H_{15/2}{\rightarrow}^6P_{7/2}$ and $^6H_{15/2}{\rightarrow}^4M_{21/2}$ transitions of $Dy^{3+}$ ions. The emission spectra of the $Mg_{0.85}MoO_4$:10 mol% $Dy^{3+}$ phosphors without incorporating $Eu^{3+}$ ions revealed a strong yellow band centered at 573 nm resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$. As the content of $Eu^{3+}$ was increased, the intensity of the yellow emission was gradually decreased, while that of red emission band located at 614 nm began to appear, approached a maximum value at 10 mol%, and then decreased at 15 mol% of $Eu^{3+}$. These results indicated that white light emission could be achieved by controlling the contents of the $Dy^{3+}$ and $Eu^{3+}$ ions incorporated into the $MgMoO_4$ host crystal.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.7
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• pp.1285-1290
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• 2017

We prepared ITZO thin films with various thicknesses on glass substrates using RF magnetron sputtering and investigated electrical, optical and structural properties of the thin film. Sheet resistance of ITZO thin film showed a decreasing trend on the increase of film thickness, but its resistivity exhibited a substantially constant value of $5.06{\pm}1.23{\times}10^{-4}{\Omega}-cm$. Transmittance of ITZO thin film moved to the long-wavelength with the increase of film thickness. Figure of merit in a visible light and an absorption area of P3HT:PCBM organic active layer of the 360nm-thick IZTO thin film was $8.21{\times}10^{-3}{\Omega}^{-1}$ and $9.29{\times}10^{-3}{\Omega}^{-1}$, respectively. Through XRD and AFM measurements, it was confirmed that all the ITZO thin films have amorphous structure and the surface roughness of films are very smooth in the range of 0.561 to 0.263 nm. In this study, it was found that amorphous ITZO thin film is a very promising material for organic solar cell.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.3
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• pp.578-584
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• 2017

$SiO_2$ buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on $SiO_2$/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was $4.53{\times}10^{-3}{\Omega}^{-1}$, resistivity, $4.42{\times}10^{-4}{\Omega}-cm$, sheet resistance, $27.63{\Omega}/sq.$, average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on $SiO_2$/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.

• Applied Chemistry for Engineering
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• v.33 no.3
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• pp.309-314
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• 2022

Carbon dots (CDs) are few nanometer-sized carbon-based nanoparticles and emerging candidate materials in various fields such as biosensors and bioimaging due to their excellent optical properties and high biocompatibility. However, most CDs, emitting blue light, have limited their application in biomedical fields due to the low penetration of short-wavelength lights into the biological system. Therefore, there has been enormous need to develop long-wavelength emitting CDs. In this study, red-emitting CDs were successfully synthesized through the hydrothermal reaction of p-phenylenediamine with hydrochloric acid. In addition, the effect of the amount of hydrochloric acid on the formation of carbon dots, resulting in the variation of the chemical structures of CDs, were investigated, which was confirmed with the intensive structural analyses using infrared and X-ray photoelectron spectroscopy. It was found that the chemical structure of CDs governed their optical properties and quantum yield. Therefore, this study provides an insight into the role of acid in forming red-emitting CDs as the optimal probe for biomedical application.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.348-353
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• 1997

Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.197-203
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• 2002

The TiO$_2$ coating solutions were synthesized with different concentrations (T1-0.7N, T2-2.0N) of hydrochloric acid used as catalyst. and TiO$_2$ thin films were prepared by sol-gel dip coating. Their structural and optical properties were examined as a function of calcination temperature. XRD results showed that T1 thin films calcined at 400~80$0^{\circ}C$ had the anatase phase, while those calcined at 100$0^{\circ}C$ had the rutile phase. T2 thin films calcined at 40$0^{\circ}C$ and $600^{\circ}C$ had the anatase phase, with the rutile phase for calcination at 80$0^{\circ}C$. Crystallinity of T2 thin films was superior to that of T1 thin films. The crystallite size of TiO$_2$ thin films increased with increasing calcination temperature, and the crystallite size of anatase phase in T2 thin films was larger than that in T1 thin films, but the crystallite size of rutile phase in T2 thin films was smaller. The surface morphology of the films showed that the films were formed more densely in the rutile phase than in the anatase phase, this phenomenon appeared conspicuously in T2 thin films. The transmittance of the samples with thin films on quartz glass calcined at 100$0^{\circ}C$ was significantly reduced at wavelength range about 300-700 nm due to the increased absorption originating from the change of crystallite phase and composition of the films and the scattering effect originating from increasing crystallite size. The refractive index of TiO$_2$ thin films increased, and hence the film thickness as well as the porosity of TiO$_2$ thin films decreased with increasing calcination temperature. Furthermore, the refractive index of T2 thin films was higher than T1 thin films, and porosity of T2 films was lower.