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http://dx.doi.org/10.6109/jkiice.2017.21.7.1285

Thickness Dependence of Electrical and Optical Properties of ITZO (In-Sn-Zn-O) Thin Films  

Kang, Seong-Jun (Department of Electrical & Semiconductor Engineering, Chonnam National University)
Joung, Yang-Hee (Department of Electrical & Semiconductor Engineering, Chonnam National University)
Abstract
We prepared ITZO thin films with various thicknesses on glass substrates using RF magnetron sputtering and investigated electrical, optical and structural properties of the thin film. Sheet resistance of ITZO thin film showed a decreasing trend on the increase of film thickness, but its resistivity exhibited a substantially constant value of $5.06{\pm}1.23{\times}10^{-4}{\Omega}-cm$. Transmittance of ITZO thin film moved to the long-wavelength with the increase of film thickness. Figure of merit in a visible light and an absorption area of P3HT:PCBM organic active layer of the 360nm-thick IZTO thin film was $8.21{\times}10^{-3}{\Omega}^{-1}$ and $9.29{\times}10^{-3}{\Omega}^{-1}$, respectively. Through XRD and AFM measurements, it was confirmed that all the ITZO thin films have amorphous structure and the surface roughness of films are very smooth in the range of 0.561 to 0.263 nm. In this study, it was found that amorphous ITZO thin film is a very promising material for organic solar cell.
Keywords
ITZO thin film; Thickness; Organic solar cell; RF magnetron sputtering; Figure of merit;
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