• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.330-336
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Journal of IKEEE
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• v.26 no.2
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• pp.299-305
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• 2022

Analog-digital converter (ADC) should be one of the most important blocks that convert various physical signals to digital ones for signal processing in the digital signal domain. As most operations of the analog circuit for sensor signal processing have been replaced by digital circuits, high-resolution performance is required for ADC. In addition, low-power must be the critical issue in order to extend the battery time of mobile system. The existing integrating sigma-delta ADCs has a characteristic of high resolution, but due to its low supply voltage condition and advanced technology, circuit error and corresponding resolution degradation of ADC result from the finite gain of the operational amplifier in the integrator. Buffer compensation technique can be applied to minimize gain errors, but there is a disadvantage of additional power dissipation due to the added buffer. In this paper, incremental signal-delta ADC is proposed with buffer switching scheme to minimize current and igh-pass bias circuit to improve the settling time.

• Journal of Multimedia Information System
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• v.9 no.2
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• pp.145-154
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• 2022

The authors are making a prototype flexible board of a radio-frequency transmitter for measuring an electromyogram (EMG) of a flying moth and plan to apply for an experimental station license from the Ministry of Internal Affairs and Communications of Japan in the summer of 2022. The goal is to create a continuous low-dose exposure standard that incorporates scientific and physiological functional assessments to replace the current standard based on lethal dose 50. This paper describes the technical evaluation of the hardware. The signal of a bipolar EMG electrode is amplified by an operational amplifier. This potential is added to a voltage-controlled crystal oscillator (27 MHz, bandwidth: 4 kHz), frequency-converted, and transmitted from an antenna about 10 cm long (diameter: 0.03 mm). The power source is a 1.55-V wristwatch battery that has a total weight of about 0.3 g (one dry battery and analog circuit) and an expected operating time of 20 minutes. The output power is -7 dBm and the effective isotropic radiated power is -40 dBm. The signal is received by a dual-whip antenna (2.15 dBi) at a distance of about 100 m from the moth. The link margin of the communication circuit is above 30 dB within 100 m. The concepts of this hardware and the measurement data are presented in this paper. This will be the first biological data transmission from a moth with an official license. In future, this telemetry system will improve the detection of physiological abnormalities of moths.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.39-46
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• 2016

This paper describes the third order feedforward delta-sigma modulator with inverter-based integrators and a 1.5bit comparator for the application of audio signal processing. The proposed 3rd-order delta-sigma modulator is multi-bit structure using 1.5 bit comparator instead of operational amplifier. This delta-sigma modulator has high SNR compared with single-bit 4th-order delta-sigma modulator in a low OSR. And it minimizes power consumes and simplified circuit structure using inverter-based integrator and using inverter-based integrator as analogue adder. The modulator was designed with 0.18um CMOS standard process and total chip area is $0.36mm^2$. The measured power cosumption is 28.8uW in a 0.8V analog supply and 66.6uW in a 1.8V digital supply. The measurement result shows that the peak SNDR of 80.7 dB, the ENOB of 13.1bit and the dynamic range of 86.1 dB with an input signal frequency of 2.5kHz, a sampling frequency of 2.56MHz and an oversampling rate of 64. The FOM (Walden) from the measurement result is 269 fJ/step, FOM (Schreier) was calculated as 169.3 dB.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.715-720
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• 2016

This paper proposes a PWM (Pulse Width Modulation) voltage mode DC-DC step-up converter for portable devices. The converter, which is operated with a 1 MHz switching frequency, is capable of reducing the mounting area of passive devices, such as inductor and capacitor, and is suitable for compact mobile products. This step-up converter consists of a power stage and a control block. The circuit elements of the power stage are an inductor, output capacitor, MOS transistors Meanwhile, control block consist of OPAMP (operational amplifier), BGR (band gap reference), soft-start, hysteresis comparator, and non-overlap driver and some protection circuits (OVP, TSD, UVLO). The hysteresis comparator and non-overlapping drivers reduce the output ripple and the effects of noise to improve safety. The proposed step-up converter was designed and verified in Magnachip/Hynix 0.18um 1-poly, 6-metal CMOS process technology. The output voltage was 5 V with a 3.3 V input voltage, output current of 100 mA, output ripple less than 1% of the output voltage, and a switching frequency of 1 MHz. These designed DC-DC step-up converters could be applied to the Personal Digital Assistants(PDA), cellular Phones, Laptop Computer, etc.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.1
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• pp.40-48
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• 2000

1A novel bipolar linear transconductor and its application to operational transconductance amplifier(OTA) for low-voltage low-power signal processing is proposed. The transconductor consists of a npn differential-pair with emitter degeneration resistor and a pnp differential-pair connected to the npn differential-pair in cascade. The bias current of the pnp differential-pair is used with the output current of the npn differential-pair for wide linearity and temperature stability. The OTA consists of the linear transconductor and a translinear current cell followed by three current mirrors. The proposed transconductor has superior linearity and low-voltage low-power characteristics when compared with the conventional transconductor. The experimental results show that the transconductor with transconductance of 50 ${\mu}S$ has a linearity error of less than ${\pm}$0.06% over an input voltage range from -2V to +2V at supply voltage ${\pm}$3V. Power dissipation of the transconductor was 2.44 mW. A prototype OTA with a transconductance of 25 ${\mu}S$ has been built with bipolar transistor array. The linearity of the OTA was same as the proposed transconductor. The OTA circuit also exhibits a transconductance that is linearly dependent on a bias current varying over four decades with a sensitivity of 0.5 S/A.

• Journal of IKEEE
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• v.2 no.2 s.3
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• pp.278-284
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• 1998

This paper describes a l0b CMOS A/D converter (ADC) for HDTV applications. The proposed ADC adopts a typical multi-step pipelined architecture. The proposed circuit design techniques are as fo1lows: A selective channel-length adjustment technique for a bias circuit minimizes the mismatch of the bias current due to the short channel effect by supply voltage variations. A power reduction technique for a high-speed two-stage operational amplifier decreases the power consumption of amplifiers with wide bandwidths by turning on and off bias currents in the suggested sequence. A typical capacitor scaling technique optimizes the chip area and power dissipation of the ADC. The proposed ADC is designed and fabricated in s 0.8 um double-poly double-metal n-well CMOS technology. The measured differential and integral nonlinearities of the prototype ADC show less than ${\pm}0.6LSB\;and\;{\pm}2.0LSB$, respectively. The typical ADC power consumption is 119 mW at 3 V with a 40 MHz sampling rate, and 320 mW at 5 V with a 50 MHz sampling rate.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.2
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• pp.99-107
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• 2006

Magnetic nondestructive testing is very useful far detecting a crack on the surface or near of the surface of the ferromagnetic materials. The distribution of the magnetic flux leakage (DMFL) on a specimen has to be obtained quantitatively to evaluate the crack. The magnetic camera is proposed to obtain the DMFL at the large lift-off. The magnetic camera consists of a magnetic source, magnetic lens, analog to digital converters (ADCs), interface, and computer. The magnetic leakage fields or the distorted magnetic fields from the object, which are concentrated on the magnetic lens, are converted to analog electrical signals tv arrayed small magnetic sensors. These analog signals are converted to digital signals by the ADCs, and are stored, imaged, and processed by the interface and computer. However the magnetic camera has limitations with respect to converting and switching speed, full range and resolution, direct memory access (DMA), temporary storage speed and volume because common ADCs were used. Improved techniques, such as those that introduce the operational amplifier (OP-Amp), amplify the signal, reduce the connection line, and use the low pass filter (LPF) to increase the signal to noise ratio are necessary. This paper proposes the exclusive embedded ADC including OP-Amp, LPF, microprocessor and DMA circuit for the magnetic camera to satisfy the conditions mentioned above.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.2
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• pp.168-175
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• 2017

In this paper, a 5V small-area NMOS-diode eFuse OTP memory cell is proposed. This cell which is used in PMICs consists of a 5V NMOS transistor and an eFuse link as a memory part, based on a BCD process. Also, a regulated voltage of V2V ($=2.0V{\pm}10%$) instead of the conventional VDD is used to the pull-up loads of a VREF circuit and a BL S/A circuit to obtain a wider operational voltage range of the eFuse memory cell. When this proposed cells are used in the simulation, their sensing resistances are found to be $15.9k{\Omega}$ and $32.9k{\Omega}$, in the normal read mode and in the program-verify-read mode, respectively. Furthermore, the read current flowing through a non-blown eFuse is restricted to $97.7{\mu}A$. Thus, the eFuse link of a non-blown eFuse OTP memory cell is kept non-blown. The layout area of the designed 1kb eFuse OTP memory IP based on Dongbu HiTek's BCD process is $168.39{\mu}m{\times}479.45{\mu}m(=0.08mm^2)$.