• Journal of IKEEE
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• v.19 no.1
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• pp.87-93
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• 2015

In this paper, a $145{\mu}W$, 87dB SNR, Low power 3rd order Sigma-Delta Modulator with Op-amp sharing is proposed. Conventional architecture with analog path and digital path is improved by adding a delayed feed -forward path for disadvantages that coefficient value of the first integrator is small. Proposed architecture has a larger coefficient value of the first integrator to remove the digital path. Power consumption of proposed architecture using op-amp sharing is lower than conventional architecture. Simulation results for the proposed SDM designed in $0.18{\mu}m$ CMOS technology with power supply voltage 1.8V, signal bandwidth 20KHz and sampling frequency 2.8224MHz shows SNR(Signal to Noise Ratio) of 87dB, the power consumption of $145{\mu}W$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.20-27
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• 2007

An analytic design guide was formulated for the design of 3-stage CMOS OP amp with the nested Gm-C(NGCC) frequency compensation. The proposed design guide generates straight-forwardly the design parameters such as the W/L ratio and current of each transistor from the given design specifications, such as, gain-bandwidth, phase margin, the ratio of compensation capacitance to load capacitance. The applications of this design guide to the two cases of 10pF and 100pF load capacitances, shows that the designed OP amp work with a reasonable performance in both cases, for the range of compensation capacitance from 10% to 100% of load capacitance.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.341-342
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• 2007

The IRFPA (InfraRed Focal Plane Array) ROIC (ReadOut Integrated Circuit) was designed in folded-cascode Op-Amp using $0.35{\mu}m$ CMOS technology. As the folded-cascode has high open-loop voltage gain and fast settling time, that used in many analog circuit designs. In this paper, folded-cascode Op-Amp for ROIC of the $32{\times}32$ IRFPA has been designed. HSPICE simulation results are unit gain bandwidth of 13.0MHz, 90.6 dB open loop gain, 8 V/${\mu}m$ slew rate, 600 ns settling time and $66^{\circ}$ phase margin.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.1-6
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• 2001

In this paper, a 1.5 V high-gain high-frequency CMOS complementary operational amplifier is presented. The input stage of op-amp is designed for supporting the constant transconductance on the Input stage by consisting of the parallel-connected rail-to-rail complementary differential pairs. And consisting of the class-AB rail-to-rail output stage using the concept of elementary shunt stage and the grounded-gate cascode compensation technique for improving the low PSRR which was a disadvantage in the general CMOS complementary input stage, the load dependence of open loop gain and the stability of op- amp on the output load are improved, and the high-gain high-frequency operation can be achieved. The designed op-amp operates perfectly on the complementary mode with the 180° phase conversion for a 1.5 V supply voltage, and shows the DC open loop gain of 84 dB, the phase margin of 65°, and the unity gain frequency of 20 MHz. In addition, the amplifier shows the 0.1 % settling time of .179 ㎲ for the positive step and 0.154 ㎲ for the negative step on the 100 mV small-signal step, respectively, and shows the total power dissipation of 8.93 mW.

• Journal of IKEEE
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• v.24 no.4
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• pp.942-949
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• 2020

In this paper, we propose an improved algorithmic ADC for CMOS Image Sensor that is suitable for a column-parallel readout circuit. The algorithm of the conventional algorithmic ADC is modified so that it can operate as a single amplifier while being independent of the capacitor ratio and insensitive to the gain of the op-amp, and it has a high conversion efficiency by using an adaptive biasing amplifier. The proposed ADC is designed with 0.18-um Magnachip CMOS process, Spectre simulation shows that the power consumption per conversion speed is reduced by 37% compared with the conventional algorithmic ADC.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1235-1242
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• 2008

In this paper, x-ray image sensor of photon counting type having a $32{\times}32$ pixel array is designed with $0.18{\mu}m$ triple-well CMOS process. Each pixel of the designed image sensor has an area of loot $100{\times}100\;{\mu}m2$ and is composed of about 400 transistors. It has an open pad of an area of $50{\times}50{\mu}m2$ of CSA(charge Sensitive Amplifier) with x-ray detector through a bump bonding. To reduce layout size, self-biased folded cascode CMOS OP amp is used instead of folded cascode OP amp with voltage bias circuit at each single-pixel CSA, and 15-bit LFSR(Linear Feedback Shift Register) counter clock generator is proposed to remove short pulse which occurs from the clock before and after it enters the counting mode. And it is designed that sensor data can be read out of the sensor column by column using a column address decoder to reduce the maximum current of the CMOS x-ray image sensor in the readout mode.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.1
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• pp.49-58
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• 1999

This paper describes an integrated low pass filter fabricated by using $0.8{\mu}m$ single poly CMOS ASIC technology. The filter has been designed for a 5th-order elliptic switched capacitor filter with cutoff frequency of 5khz, 0.1dB passband ripple. The filter consists of MOS swiches poly capacitors and five CMOS op-amps. For the realization of the SC filter, continuous time transfer function H(s) is obtained from LC passive type, and transfered as discrete time transfer H(z) through bilinear-z transform. Another filter has been designed by capacitor scaling for reduced chip area, considering dynamic range of the op-amp. The test results of two fabricated filters are cutoff frequency of 4.96~4.98khz, 35~38dB gain attenuation and 0.72~0.81dB passband ripple with the ${\pm}2.5V$power supply clock of 50KHz.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1990.06a
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• pp.851-855
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• 1990

• Journal of information and communication convergence engineering
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• v.3 no.1
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• pp.28-32
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• 2005

In this paper, we propose a novel test method to effectively detect hard and soft faults in CMOS 2-stage op-amps. The proposed method uses a very high frequency sinusoidal signal that exceeds unit gain bandwidth to maximize the fault effects. Since the proposed test method doesn't require any complex algorithms to generate the test pattern and uses only a single test pattern to detect all target faults, therefore test costs can be much reduced. The area overhead is also very small because the CUT is converted to a unit gain amplifier. Using HSPICE simulation, the results indicated a high degree of fault coverage for hard and soft faults in CMOS 2-stage op-amps. To verify this proposed method, we fabricated a CMOS op-amp that contained various short and open faults through the Hyundai 0.65-um 2-poly 2-metal CMOS process. Experimental results for the fabricated chip have shown that the proposed test method can effectively detect hard and soft faults in CMOS op-amps.

• Journal of IKEEE
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• v.16 no.3
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• pp.177-181
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• 2012

This paper introduces a thermal compensation circuit with improved compensation characteristic for amplifiers to provide stable output power regardless environmental temperature. The proposed thermal compensation circuit is composed of two branchline couplers having two diodes between them. And, the thermistor whose resistance varies significantly with temperature inversely and a operational amplifiers, so called as OP-amp, control the diodes in the compensations circuit to realize more effective thermal compendation characteristic compared with conventional circuit.