• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.17 no.6
• /
• pp.95-104
• /
• 2003

The electric traction systems are quite differ from general power systems which is single-phase and heavy load. Therefore, there are inevitably power quality problems such as steady state or transient voltage drop, voltage imbalance and harmonic distortion. Among these problems, since steady-state volatge drop is the one of most important factor in electric power quality, many researches about on the compensation of volatge drop by using SVC(Static Var Compensator) and/or STACOM(Static Compensator) have been studied and proposed Also, it is expected that transient voltage drop(voltage sag) could affect the control and safety of high speed traction load. In this paper, voltage sag compensation of AT(Auto Transformer) feeding system are studied The detailed transient models of utility source, scott transformer, AT, and traction load are estabilished. The application of DVR(Dynamic Voltage Restorer) in electric traction system is proposed to compensate the voltage sag of traction network which is occured by the fault of utility source. It can be shown that application of the DVR in electric traction system is very useful to compensate the volatge sag from the result of related simulation works.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.1
• /
• pp.137-141
• /
• 2018

The voltage drop is important in electric railway for feeding a huge power of train on fixed feeding area. Nowadays it is tried to operate a high speed trains on conventional lines and there is problem on the voltage drop too. It is simulated on the conditions increased the turn ratio of trolley, installed autotransformer neutral line with variable taps. In result, it is compensated the voltage drop between ATs and better on last AT, not on the position of AT. And it is decreased a return current and neutral current of AT because of unbalance between trolley and feeder. It should be studied faster and more controllable the solid state switchs instead of the mechanical one in order to utilize this system.

• Nuclear Engineering and Technology
• /
• v.49 no.1
• /
• pp.209-215
• /
• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1559-1561
• /
• 2003

In northeast Asia, there will be several important HVDC transmission lines to be established in Korea and China for perspective electric network market. 5500V 4-inches High voltage thyristor can be used in the DC transmission and distribution of electric power system. In this application, many thyristors are connected in series for each thyristor valves. Therefore, the required low reverse-recovery charge QRR and low on-state voltage drop $V_{TM}$ for such thyristor is necessary to this application. In our work, the on-state and off-state voltage performance was simulated by commercial simulation software.

• Journal of the Korean Society of Safety
• /
• v.29 no.2
• /
• pp.12-17
• /
• 2014

This paper is aimed to analyze the characteristics of simultaneous voltage, current and temperature signals for poor connection on electrical connector. In order to attain this purpose, detected were the current and voltage signals on electric wire with series arc, named arc signals, and also monitored were the changes of RMS, instantaneous value of waveform in time domain and temperature value with video. Two states are made normal state over $5kgf{\cdot}cm$ and poor connections state below $0.5kgf{\cdot}cm$ by screw gage. In the voltage signal case, the voltage drop was increased with which the current was increased. In the current signal case, poor connections at the time interval 1~4A all showed "shoulder", as distinct difference from the normal state shown waveform pattern. In the temperature signal case, poor connections are twice at 1A and five times at 4A in the normal state. The temperature continues insulation of electrical wiring and connector can be carbonized. The results of this study will be effectively used in developing the preventive devices and system for electric fire by poor connections.

• Journal of international Conference on Electrical Machines and Systems
• /
• v.3 no.3
• /
• pp.354-361
• /
• 2014

The Unified Power Flow Controller (UPFC) can flexibly manage power flow and maintain line voltage. The UPFC consists of two inverters in parallel side and series side. In parallel side, the reactive power can be compensated to improve the power factor. In series side, the voltage drop can be compensated to maintain proper line voltage. It is necessary for the operation in both sides to output the current and the voltage quickly and accurately. As the method for the UPFC control, the deadbeat control with state observer is applied. The deadbeat control is able to realize a quick response of the current and voltage control for only a sampling period compared with the general PI control. A principle and simulation results are presented in this paper.

• ETRI Journal
• /
• v.39 no.3
• /
• pp.373-382
• /
• 2017

A new internally compensated low drop-out voltage regulator based on the cascoded flipped voltage follower is presented in this paper. Adaptive biasing current and fast charging/discharging paths have been added to rapidly charge and discharge the parasitic capacitance of the pass transistor gate, thus improving the transient response. The proposed regulator was designed with standard 65-nm CMOS technology. Measurements show load and line regulations of $433.80{\mu}V/mA$ and 5.61 mV/V, respectively. Furthermore, the output voltage spikes are kept under 76 mV for 0.1 mA to 100 mA load variations and 0.9 V to 1.2 V line variations with rise and fall times of $1{\mu}s$. The total current consumption is $17.88{\mu}V/mA$ (for a 0.9 V supply voltage).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.8
• /
• pp.496-500
• /
• 2015

This paper was proposed the theoretical research and optimal design 3000V super junction NPT IGBT for using electrical automotive and power conversion. Because super junction IGBT was showed ultra low on resistance, it was structure that can improve the thermal characteristics of conventional NPT IGBT. The electrical characteristics of super junction NPT IGBT were 2.52 V of on state voltage drop, 4.33 V of threshold voltage and 2,846 V breakdown voltage. We did not obtaing 3,000 V breakdown voltage but we will obtain 3,000 V breakdown voltage through improving p pillar layer. If we are carried this research, This device will be used electrical automotive, power conversiton and high speed train.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.4
• /
• pp.210-213
• /
• 2017

In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.74-75
• /
• 2008

TIGBT has some merits which are lower on-state voltage drop and smaller cell pitch, but also has a defect which is relatively lower breakdown voltage in comparison with planar IGBT. This lower breakdown voltage is due to the electric field which is concentrated on beneath the vertical gate. Therefore in this paper, new trench IGBT structure is proposed to improve breakdown voltage In the new proposed structure, a narrow oxide beneath the trench gate edge where the electric field is concentrated is extended into rectangular shape to decrease the electric field. As a result, breakdown voltage is improved to 23%.