Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.74-75
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- 2008
A Study on Breakdown Voltage Improvement of the Trench IGBT by Extending a Gate Oxide Region beneath the Trench Gate
트렌치 케이트 하단의 게이트 산화막 확장을 통한 트렌치 IGBT의 항복전압 향상에 대한 연구
- Lee, Jae-In (Department of Electrical Engineering Korea University) ;
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Kyoung, Sin-Su
(Department of Electrical Engineering Korea University)
;
- Choi, Jong-Chan (Department of Electrical Engineering Korea University) ;
- Sung, Man-Young (Department of Electrical Engineering Korea University)
- Published : 2008.11.06
Abstract
TIGBT has some merits which are lower on-state voltage drop and smaller cell pitch, but also has a defect which is relatively lower breakdown voltage in comparison with planar IGBT. This lower breakdown voltage is due to the electric field which is concentrated on beneath the vertical gate. Therefore in this paper, new trench IGBT structure is proposed to improve breakdown voltage In the new proposed structure, a narrow oxide beneath the trench gate edge where the electric field is concentrated is extended into rectangular shape to decrease the electric field. As a result, breakdown voltage is improved to 23%.