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http://dx.doi.org/10.4313/JKEM.2015.28.8.496

The Develop of Super Junction IGBT for Using Super High Voltage  

Chung, Hun-Suk (Department of Photovoltaic Engineering, Far East University)
Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.8, 2015 , pp. 496-500 More about this Journal
Abstract
This paper was proposed the theoretical research and optimal design 3000V super junction NPT IGBT for using electrical automotive and power conversion. Because super junction IGBT was showed ultra low on resistance, it was structure that can improve the thermal characteristics of conventional NPT IGBT. The electrical characteristics of super junction NPT IGBT were 2.52 V of on state voltage drop, 4.33 V of threshold voltage and 2,846 V breakdown voltage. We did not obtaing 3,000 V breakdown voltage but we will obtain 3,000 V breakdown voltage through improving p pillar layer. If we are carried this research, This device will be used electrical automotive, power conversiton and high speed train.
Keywords
Planar gate; Super high voltage; Super junction; NPT IGBT; Breakdown voltage;
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Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 MOSFET Basics - Fairchild Semiconductor, 2000
2 G. P. Sim, B. S. Ann, Y. H. Kang, Y. S. Hong, and E. G. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 190 (2013).
3 H. S. Lee, E. G. Kang, A. Shin, H. H. Shin, and M. Y. Sung, KIEE, 7 (2006).
4 Y. S. Hang, E. S. Jung, and E. Y. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 276 (2012).
5 J. H. Lee, E. S. Jung, and E. Y. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 270 (2012).