• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.112-115
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.43-48
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• 2023

This paper discusses the design of 32Mbyte asynchronous nonvolatile memory modules, which includes self-diagnosis and RTC (Real Time Clock) functions to enhance their data stability and reliability. Nonvolatile memory modules can maintain data even in a power-off state, thereby improving the stability and reliability of a system or device. However, due to the possibility of data error due to electrical or physical reasons, additional data loss prevention methods are required. To minimize data error in asynchronous nonvolatile memory modules, this paper proposes the use of voltage monitoring circuits, self-diagnosis, BBT (Bad Block Table), ECC (Error Correction Code), CRC (Cyclic Redundancy Check)32, and data check sum, data recording method using RTC. Prototypes have been produced to confirm correct operation and suggest the possibility of commercialization.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.13.2-13.2
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• 2006

• Korean Journal of Fisheries and Aquatic Sciences
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• v.18 no.3
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• pp.227-234
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• 1985

The present study was carried out for making clear the organic acids composition of some shellfishes and their boiled-dried products. Three species of shellfish such as top shell, hard clam and abalone were chosen as the experimental samples and analysed for their nonvolatile organic acids composition by gas liquid chromatography (GLC). Eight kinds of nonvolatile organic acid were identified in raw and boiled-dried top shell, major ones were succinic, malic and pyroglutamic acid. Out of nine kinds of nonvolatile acid was determined in raw and boiled-dried of hard clam, abundant ones were succinic, lactic and malic acid, And seven kinds of nonvolatile organic acid were detected in boiled-dried abalone while eight kinds in raw sample, abundant ones were succinic, lactic and pyroglutamic acid, respectively. In all samples, the total amount of nonvolatile organic acid was the most abundant in hard clam while the least in abalone, and the content of succinic acid was appeared as the most abundant one. In dried samples, the total amount of the nonvolatile organic acid was determined to be about half-decrease after the boiled-dried treatment of the raw samples, of which abalone showed the highest decreasing을 rate whereas hard clam was the lowest. In general, the decreasing rate of each acid was the higher in fumaric, malic and citric acid than in maleic, oxalic and succinic acid.

• Journal of the Korean Society of Food Culture
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• v.4 no.2
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• pp.177-179
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• 1989

This study was carried out to investigate the compositions of free sugars, lipids, and nonvolatile organic acids in parts of omija. The major components of free sugars in each part of omija were fructose and glucose. The contents of those were similar in fruits and endocarps, however, the content of glucose was 1.5 times as much as that of fructose in seeds. The content of lipids in endocarps was 2.4 times as much as that in seeds, and major composition of lipids was neutral lipid. In the contents of nonvolatile organic acids, the content of citric acid that content was 61 to 68% depend on each part of sample was highest among other components, and that of malic acid being 25 to 30% was followed. The contents of nonvolatile organic acids of water extract were 74.5, 55.9, and 69.2% as high as those of original sample in fruits, endocarps, and seeds, respectively. The content of oxalic acid in seeds was lower than that of it in original sample.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.195-203
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• 2005

Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is proposed to overcome the short channel effects and to increase the memory density. We need more complex voltage schemes for DG MOSFET devices. In view of peripheral circuits driving memory cells, one should consider various voltage sources used for several operations. It is one of the key issues to minimize the number of voltage sources. This criterion needs more caution in considering a DG nonvolatile memory cell that inevitably requires more number of events for voltage sources. Therefore figuring out the permissible range of operating bias should be preceded for reliable operation. We found that reliable operation largely depends on the depletion conditions of the silicon channel according to charge amount stored in the floating gates and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2D numerical simulation tool as the device simulator.

• Journal of IKEEE
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• v.27 no.4
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• pp.386-390
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• 2023

In this study, we examined the quasi-nonvolatile memory characteristics of silicon nanosheet (SiNS) feedback field-effect transistors (FBFETs) fabricated using a complementary metal-oxide-semiconductor process. The SiNS channel layers fabricated by photoresist overexposure method had a width of approximately 180 nm and a height of 70 nm. The SiNS FBFETs operated in a positive feedback loop mechanism and exhibited an extremely low subthreshold swing of 1.1 mV/dec and a high ON/OFF current ratio of 2.4×10⁷. Moreover, SiNS FBFETs represented long retention time of 50 seconds, indicating the quasi-nonvolatile memory characteristics.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.155-165
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• 2010

As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

• Journal of the Korean Society of Tobacco Science
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• v.4 no.2
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• pp.75-80
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• 1982

During the process of curing of the tobacco (Nicotiana tabacum L. ) leaves the concentration change of Nonvolatile organic acids and Higher fatty acids of the flue-cured tobacco leaves was observed. The contents of Nonvolatile organic acids in flue-cured tobacco leaves were as follows, malic> oxalic>malonic>citric>succinic acid. Higher fatty acids was linolenic>Palmitic>oleic >stearic$\geqq$linoleic acid, Citric acid content of last curing time was increased about 4~5 times in compare to before curing tobacco. It was concluded that significant changes of three variety flue-cured tobacco but a significant difference was observed in the composition of Daegu gold variety.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.825-828
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• 2005

In this paper, we propose a new nonvolatile unit memory cell and proposal peripheral circuit using the polymer material. Memory that relies on bistable behavior- having tow states associated with different resistances at the same applied voltage - has attracted much interest because of its nonvolatile properties. Such memory may also have other merits, including simplicity of structure and manufacturing, and the small size of memory cells. We have plotted the load line graphs for the use of a polymer memory character, hence we have designed in the band-gap reference shape of a write/erase drive, and then designed in the 2-stage differential amplifier shape of a sense amplifier in the consideration of a low current characteristic of a polymer memory cell. The simulation result shows that is has high gain about 80dB by sensing the very small current.