Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The study of conductivity transition on chalcogenide thin films

칼코게나이드 박막에서의 conductivity 변화에 관한 연구

  • Yang, Sung-Jun (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Shin, Kyung (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Park, Jung-Il (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Department of Electronic Materials Eng. Kwangwoon Univ.)
  • 양성준 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 박정일 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2003.11.13
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Abstract

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

Keywords