• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.70-70
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• 2009

In this paper, we proposed 2500V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500V NPT IGBT according to size of device. In results, we obtaind design parameter with 375um n-drift thickness, 15um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000V NPT IGBT devices.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.273-279
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• 2010

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.563-564
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) for power switching device based on Non Punch Through(NPT) IGBT structure. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The proposed device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.405-408
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• 2004

In this work, Analytical model for voltage and current characteristics of NPT(Non-PunchThrough) IGBT(Insulated Gate Bipolar Transistor) was represented. voltage and current characteristics models were based on prediction on power loss of NPT IGBT during transient condition. For Analytical current model, excess carrier concentration and accumulated charge in active base width was analyzed with time variance. Analytical models were simulated by varying lifetime of excess minority carrier.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.253-260
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• 2012

IGBT (insulated gate bipolar transistor) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on state voltage drop should be lowered and the switching time should be shorted. However, there is Trade-off between the breakdown voltage and the on state voltage drop. To achieving good electrical characteristics, field stop IGBT (FS IGBT) is proposed. In this paper, 1,200 V planar gate non punch-through IGBT (planar gate NPT IGBT), planar gate FS IGBT and trench gate FS IGBT is designed and optimized. The simulation results are compared with each three structures. In results, we optain optimal design parameters and confirm excellence of trench gate FS IGBT. Experimental result by using medici, shows 40% improvement of on state voltage drop.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.173-174
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• 2006

In this paper we proposed transient model for NPT(Non Punch-Through) IGBT(Insulated Gate Bipolar Transistor) with gate resistances. As gate resistance increases, turn-off time increases. But If gate resistance is small, overshoot voltage increase. To analyze the effect of gate resistance, the transient model is made and the experiments are conducted. We used gate resistances of values; 8[$\Omega$], 140[$\Omega$], 810[$\Omega$] for simulations and experiments. We compared theoretical and experimental results and obtained good agreements.

• Journal of Power Electronics
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• 제9권3호
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• pp.464-471
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• 2009

This paper introduces a new Motion-$SPM^{TM}$ (Smart Power Modules) module in Single In-line Package (SIP), which is a fully optimized intelligent integrated IGBT inverter module for up to 1kW low power motor drive applications. This module offers a sophisticated, integrated solution and tremendous design flexibility. It also takes advantage of pliability for the arrangement of heat-sink due to two types of lead forms. It comes to be realized by employing non-punch-through (NPT) IGBT with a fast recovery diode and highly integrated building block, which features built-in HVICs and a gate driver that offers more simplicity and compactness leading to reduced costs and high reliability of the entire system. This module also provides technical advantages such as the optimized cost effective thermal performances through IMS (Insulated Metal Substrate), the high latch immunity. This paper provides an overall description of the Motion-$SPM^{TM}$ in SIP as well as actual application issues such as electrical characteristics, thermal performance, circuit configurations and power ratings.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.26-30
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• 2001

In this paper, transient characteristics of IGBT has been analytically solved to express the excess minority carrier distribution in active base region and the output voltage. Non-Punch Through(NPT) structure has been selected to prove the validity of the model. It is based on the equivalent circuit of MOSFET which supplies a low gain and a high level injection to the base of BJT. None of the quasi static conditions have been assumed to trace the transient characteristics. The basic elements of the model have been derived from the ambipolar transport theory. Theoretical predictions of the output voltages have been obtained with different lifetimes and compared with experimental and theoretical results available in the literature. From the analytical approach, good agreement has been obtained to provide reliable and fast output of the device.