• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.5
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• pp.430-437
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• 2016

In general, noise measurement results show larger random ripple than those of the network analyzer. The reason for the lager random ripple of the noise measurements is considered that the general noise measurements uses absolute measured noise powers, while the network analyzer measures using a ratio of the measured powers. In this paper, a novel measurement method of noise correlation matrix using relative noise ratios is proposed. Proposed method measures the five noise powers of DUT for the five input impedance variations and the four relative noise ratios are formed using the five measured noise powers. The four noise ratios are used to compute the noise correlation matrix and noise parameters. The resulting noise parameters for a 0.5 dB attenuator show good agreements with theoretical values calculated by S-parameters. Also, the noise parameters of an active DUT with a noise figure of less than 1 dB are measured and the measured results show a small random ripple as expected and their values are physically acceptable. In conclusion, the proposed method can be applied to the noise parameter measurements for DUT with a noise figure below 1 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.76-80
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• 2011

This paper has proposed a 3~5 GHz low-power and wideband LNA(Low Noise Amplifier), which has been implemented in a 0.18-${\mu}m$ CMOS technology. The proposed LNA has basically the noise-cancelling topology to achieve a balun-function, wideband input matching, and relative low noise figure. In addition, it has utilized a 2nd-order LC-band-pass filter(BPF) as its output load to achieve higher power gain and lower noise figure with the lowest dc power consumption among previously reported works. The proposed amplifier consumes only 3.94 mA from a 1.8 V supply voltage. The simulation results show a power gain of more than +17 dB, a noise figure of less than +4 dB, and an input IP3 of -15.5 dBm.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.11a
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• pp.61-64
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• 2000

We fabricated and characterized Low Noise Amplifier (LNA) using MCM-C (Multi-Chip-Module-Cofired) technology for 2.14 GHz IMT-2000 mobile terminal application. First, We designed LNA circuits and simulated it's high frequency characteristics using circuits simulator. For the simulation, we adopted high frequency libraries of all the devices used in LNA samples. By the simulation, Gain was 17 dB and Noise Figure was 1.4 dB. We used multilayer process of LTCC (Low Temperature Co-fired Ceramics) substrate and conductor, resistor pattern for the MCM-C LNA fabrication. We made 2 buried inductors, 2 buried capacitors and 3 buried resistors. The number of the total layers was 6. On the top layer, we patterned microstrip line and pads for the SMT device. We measured the high frequency characteristics, and the results were 14.7 dB Gain and 1.5 dB Noise Figure.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1599-1600
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• 2006

In this paper, a small size, $7{\times}6\;mm^2$, Low Noise Amplifier(LNA) using LTCC process was fabricated with multi-layer structure for 2.4GHz wireless LAN. The measured results demonstrate that the bandwidth is 130 MHz, and the operating frequency is from 2.39GHz to 2.52GHz. The power gain is above 7.3 dB in the operating frequency range and the gain flatness is 0.5 dB. The maximum S11 is -4 dB and the maximum S22 is -7.5 dB. The noise figure is less than 1.83 dB. The measured power gain, S11 and S22 were had poorer performance than the simulation results. The reason for this discrepancy is that the input and output matching was not performed exactly. However, the noise figure of the LTCC low noise amplifier is better than simulation result. It is found that it is possible to fabricate a LTCC low noise amplifier in a small size.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.10
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• pp.2045-2051
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• 2009

A 5-GHz band Low Noise Amplifier(LNA) using SOI MOSFET is designed. To improve the noise performance, depletion-type SOI MOSFET is adopted, and it is designed by the two-stage topology consisting of common-source and common-gate stages for low-voltage operation. The fabricated LNA achieved an S11 of less than -10dB, voltage gain of 21dB with a power consumption of 8.3mW at 5.5GHz, and a noise figure of 1.7dB indicated that the depletion-type LNA improved the noise figure by 0.3dB compared with conventional type. These results show the feasibility of a CMOS LNA employing depletion-type SOI MOSFET for low-noise application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.119-126
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• 2015

The information about noise parameters is essential in the design of low noise amplifier. In the past, the noise parameters were measured using an impedance tuner and noise figure analyzer. Recently, the authors proposed the method of measuring the noise parameters using the 8-port network without the aid of the mechanically driven impedance tuner. However, the 8-port method still requires the noise source and causes the complexity in the measurements. In this paper, a novel measurement method of the noise parameters without the noise source using 6-port network is proposed. Based on the proposed 6-port method, the noise parameters of 10 dB attenuator whose noise parameters can be theoretically determined were measured and the measured noise parameters are compared with those measured using the previous 8-port network method. As a result, the accuracy of the measured noise parameters using 6-port network is found to be comparable to the previous 8-port network method.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.873-876
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• 2005

A low noise amplifier(LNA) using electro-magnetic field simulator is designed in standard 0.25um CMOS process. Integrated spiral inductor is simulated using EM field solver. Then LNA is simulated with active device, capacitor and simulated inductor by EM field solver. A S11 and S21 of -15.45dB and 17.8dB at 2.3GHz as simulation results was achieved. A Noise Figure is 2.92dB. And Measurements show a S11 and S21 of -12.4dB and 17.8dB at 2.3GHz. A Noise Figure of 3.3dB was achieved.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.7-13
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• 1997

A X-band 3-stage monolithic LNA (low noise amplifier) with series feedback has been successfully desined and demonstrated by suign 0.5-$\mu\textrm{m}$ GaAs MESFET. In the design of the 3-stage LNA, the effects of series feedback to the noise figure, the gain, and the stability have been investigated ot find the optimal short stub length. As a result, the inductive series feedback topology which has 10degree short stub in the GaAs MESFET source lead, has been employed in the 1-st stage. The fabricated MMIC LNA's chip size is only 1mm$^{2}$/stage, which is smaller than the previously reported X-band MMIC input/output return losses are less than -10dB and -15dB, respectively. The noise figure (NF) is less than 2.6dB. The measured data show good agreement with the simulated values.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.638-648
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• 2003

An active capacitance circuit is analyzed in depth and its application to active RF BPF with low noise figure is discussed. The characteristics of the active capacitance circuit made of FET[1] exhibits negative resistance and conventional capacitance, which is easily controlled. However, it is difficult to make the negative resistance adequate in the designated frequency range due to the lack of detailed analysis, which could make an active circuit unstable as the frequency is going higher or lower. In this paper, we analyzed the negative resistance characteristics of active capacitance circuits and also presented the method that the flatness of passband can be controlled. Finally we have designed a 4-stage active BPE, which results in bandwidth of 100 MHz, 0,04 dB insertion loss, 0.2 dB ripple, and noise figure of 2.4 dB at 1.75 GHz band.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.451-454
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• 2002

In this paper, a low-noise amplifier is designed and fabricated using the HJFET for the reception of the Ku-band satellite broadcast signals. The optimum input and output reflection coefficients of each amplifier stage are obtained by the trade-off between the stable gain and the noise figure circle. The amplifier performance is simulated and optimized using a microwave CAD software. The designed amplifier is fabricated and tested. Results of the test show a gain of 17.0 dB, a gain flatness of less than $\pm$2.BdB, the noise figure of less than 1.0 dB, and the input and output reflection coefficient of less than -10 dB.