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http://dx.doi.org/10.6109/JKIICE.2009.13.10.2045

A 5GHz-Band Low Noise Amplifier Using Depletion-type SOI MOSFET  

Kim, Gue-Chol (목포대학교 해양전자통신공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.13, no.10, 2009 , pp. 2045-2051 More about this Journal
Abstract
A 5-GHz band Low Noise Amplifier(LNA) using SOI MOSFET is designed. To improve the noise performance, depletion-type SOI MOSFET is adopted, and it is designed by the two-stage topology consisting of common-source and common-gate stages for low-voltage operation. The fabricated LNA achieved an S11 of less than -10dB, voltage gain of 21dB with a power consumption of 8.3mW at 5.5GHz, and a noise figure of 1.7dB indicated that the depletion-type LNA improved the noise figure by 0.3dB compared with conventional type. These results show the feasibility of a CMOS LNA employing depletion-type SOI MOSFET for low-noise application.
Keywords
SOI; MOSFET; RF; Amplifier;
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