• Korean Journal of Environmental Agriculture
• /
• v.31 no.3
• /
• pp.205-211
• /
• 2012

BACKGROUND: Generally, nitrogen (N) fertilization higher than the recommended dose is applied during vegetable cultivation to increase productivity. But higher N fertilization also increases the concentrations of nitrate ions and nitrous oxide in soil. In this experiment, the impact of N fertilization was studied on nitrous oxide ($N_2O$) emission to standardize the optimum fertilization level for minimizing $N_2O$ emission as well as increasing crop productivity. Herein, we developed $N_2O$ emission inventory for upland soil region during red pepper and Chinese milk vetch cultivation. METHODS AND RESULTS: Nitrogen fertilizers were applied at different rates to study their effect on $N_2O$ emission during red pepper and Chinese milk vetch cultivation. The gas samples were collected by static closed chamber method and $N_2O$ concentration was measured by gas chromatography. The total $N_2O$ flux was steadily increased due to increasing N fertilization level, though the overall pattern of $N_2O$ emission dynamics was same. Application of N fertilization higher than the recommended dose increased the values of both seasonal $N_2O$ flux (94.5% for Chinese cabbage and 30.7% for red pepper) and $N_2O$ emission per unit crop yield (77.9% for Chinese cabbage and 23.2% for red pepper). Nitrous oxide inventory revealed that the $N_2O$ emission due to unit amount of N application from short-duration vegetable field in fall (autumn) season (6.36 kg/ha) was almost 70% higher than that during summer season. CONCLUSION: Application of excess N-fertilizers increased seasonal $N_2O$ flux especially the $N_2O$ flux per unit yield during both Chinese cabbage and red pepper cultivation. This suggested that the higher N fertilization than the recommended dose actually facilitates $N_2O$ emission than boosting plant productivity. The $N_2O$ inventory for upland farming in temperate region like Korea revealed that $N_2O$ flux due to unit amount of N-fertilizer application for Chinese cabbage in fall (autumn) season was comparatively higher than that of summer vegetables like red pepper. Therefore, the judicious N fertilization following recommended dose is required to suppress $N_2O$ emission with high vegetable productivity in upland soils.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.183-184
• /
• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of Industrial Technology
• /
• v.39 no.1
• /
• pp.1-5
• /
• 2019

In this study, we examined the effect of NO addition on the ozone-induced soot oxidation activity of $LaMnO_3$ perovskite catalysts. The addition of 10~20% NO ($NO_2$) with respect to the concentration of ozone effectively enhanced the rate of ozone-induced soot oxidation rate over $LaMnO_3$. However, the excessive addition of NO ($NO_2$) was detrimental to ozone-induced soot oxidation activity. It is supposed nitrogen oxides would adsorb on the catalyst and then react with carbon-oxygen species developed on soot surface, but an excessive addition of nitrogen oxide would inhibit the formation of carbon-oxygen species, which is a key intermediate in the reaction, and consequently suppress the oxidation rate of soot.

• Applied Chemistry for Engineering
• /
• v.33 no.6
• /
• pp.630-635
• /
• 2022

Copper(II) oxide (CuO), electroless plated on a nitrogen-containing carbon sponge prepared by a melamine sponge thermal treatment, was developed as a nitric oxide (NO) gas sensor that operates without a wafer. The CuO content on the surface of the carbon sponge increased as the plating time increased, but the content of nitrogen known to induce NO gas adsorption decreased. The untreated carbon sponge showed a maximum resistance change (5.0%) at 18 min. On the other hand, the CuO plated sample (CuO30s-CS) showed a maximum resistance change of 18.3% in 8 min. It is considered that the improvement of the NO gas sensing capability was caused by the increase in hole carriers of the carbon sponge and improved movement of electrons due to CuO. However, the NO gas detection resistance of the CuO electroless plated carbon sponge for 60 s decreased to 1.9%. It is considered that the surface of the carbon sponge was completely plated with CuO, resulting in a decrease in the NO gas adsorption capacity and resistance change. Thus, CuO-plated carbon sponge can be used as an effective NO gas sensor because it has fast and excellent resistance change properties, but CuO should not be completely plated on the surface of the carbon sponge.

• Journal of Pharmacopuncture
• /
• v.5 no.2
• /
• pp.40-51
• /
• 2002

Objectives : The purpose of this study was to investigate the effect of Bee Venom on the lipopolysaccharide-induced expression phospholipase $A_2$, cyclooxygenase-2 and inducible nitrogen oxide synthase, and the generation of arachidonic acid, prostaglandin D2 and E2 in RAW 264.7 cells, a murine macrophage cell line. Methods : The expression of phospholipase $A_2$, cyclooxygenase and inducible nitrogen oxide synthase was determined by western blotting with corresponding antibodies, and the generation of arachidonic acid, prostaglandin $D_2$ and $E_2$ was assayed by ELISA method in RAW 264.7 cells. The non-toxic concentrations (0.1 to $5\;{\mu}g/ml$) of bee venom determined by MTT assay, were used in this study. Results : 1. Bee venom inhibited lipopolysaccharide-induced expression of phospholipase $A_2$ in a dose dependent manner after 48 hours treatment. 2. Bee venom inhibited lipopolysaccharide-induced expression of cyclooxygenase-2 in a dose dependent manner after 24 and 48 hours treatment. 3. Bee venom inhibited lipopolysaccharide-induced expression of inducible nitrogen oxidesynthase in a dose dependent manner after 48 hours treatment. 4. The generation of arachidonic acid, prostaglandin $D_2$ and $E_2$ was not much affected by the treatment of bee venom on the lipopolysaccharide-induced generation of arachidonic acid, prostaglandin $D_2$ and $E_2$ in RAW 264.7 cells.

• Journal of Advanced Marine Engineering and Technology
• /
• v.36 no.4
• /
• pp.484-489
• /
• 2012

The objective of this work presented here was focused on analysis of particulate matter and nitrogen oxide characteristics in ESC test mode from heavy-duty diesel engine installed on-road vehicles applicable to prime propulsion engine for marine vessels. The authors confirmed that a large quantity particulate matter were emitted in high power density condition, nitrogen oxide characteristics were dependent on exhaust gas temperature. Particulate matters were reduced by 1/100~1/1,000 times in post DPF with test modes but filtration efficiency was decreased in the engine power fluctuation. In the case of the high speed and power condition, the exhaust level of particulate matters was increased according to increment of temperature of gas flowing into DPF. The orders of magnitude for particle concentration levels from the analysis of size distribution of particulate matters of test engine was different. Both emitting nano-sized particles below 100nm regardless of DPF and non-DPF.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.6
• /
• pp.445-449
• /
• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Korean Journal of Materials Research
• /
• v.2 no.4
• /
• pp.285-292
• /
• 1992

Ultrathin(8nm) oxynitride (SiOxNy) film have been formed on Si(100) by rapid thermal processing(RTP) in $O_2$and $N_2$O as reactants. Compared with conventional furnace $O_2$ oxide, the oxynitride dielectrics shows better characteristics of I-V and TDDB, and less flat-band voltage shift. The oxynitride has a behavior of Fowler-Nordheim tunneling in the region of V 〉${\varphi}_0$ simialr to pure Si$O_2$oxide. The relative dielectric constant of oxynitride is higher than that of conventional pure oxide. Excellent diffusion harrier property to dopant(B$F_2$) is also observed. Nitrogen depth profiles by SIMS, AES, and XPS show nitrogen pile - up at Si$O_2$/Si interface, which can explain the improved properties of oxynitride dielectrics.

• Korean Journal of Soil Science and Fertilizer
• /
• v.46 no.6
• /
• pp.463-468
• /
• 2013

The level of nitrous oxide ($N_2O$), a long-lived greenhouse gas, in atmosphere has increased mainly due to anthropogenic source, especially application of nitrogen fertilizers. Quantifying $N_2O$ emission from agricultural field is essential to develop national inventories of greenhouse gases (GHGs) emission. The objective of the study was to develop emission factor to estimate direct $N_2O$ emission from agricultural field in Gangwon-do, Korea by measuring $N_2O$ emissions from potato (Solanum tuberosum), red pepper (Capsicum annum L.), and Chinese cabbage (Brassica campestris L.) cultivation lands from 2009 to 2012. Accumulated $N_2O$ emission was $1.48{\pm}0.25kg$ $N_2O-N\;ha^{-1}$ for red pepper, $1.27{\pm}0.27kg$ $N_2O-N\;ha^{-1}$ for potato, $1.49{\pm}0.06kg$ $N_2O-N\;ha^{-1}$ for Chinese cabbage cultivated in spring, and $1.14{\pm}0.22kg$ $N_2O-N\;ha^{-1}$ for fall Chinese cabbage. Emission factor of $N_2O$ calculated from accumulated $N_2O$ emission, nitrogen fertilization rate, and background $N_2O$ emission was $0.0051{\pm}0.0016kg$ $N_2O-N\;ha^{-1}$ N for cropland in Gangwon province. More extensive study is deserved to be conducted to develop $N_2O$ emission factor for upland crops in Korea through examining the emission factors from various regions and crops because $N_2O$ emission is influenced by many factors including climate characteristics, soil properties, and agricultural practices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.430-430
• /
• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.