• 한국세라믹학회지
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• 제55권5호
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• pp.407-418
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• 2018

Increasing demand for portable and wireless electronic devices with high power and energy densities has inspired global research to investigate, in lieu of scarce rare-earth and expensive ruthenium oxide-like materials, abundant, cheap, easily producible, and chemically stable electrode materials. Several potential electrode materials, including carbon-based materials, metal oxides, metal chalcogenides, layered metal double hydroxides, metal nitrides, metal phosphides, and metal chlorides with above requirements, have been effectively and efficiently applied in electrochemical supercapacitor energy storage devices. The synthesis of self-grown, or in-situ, nanostructured electrode materials using chemical processes is well-known, wherein the base material itself produces the required phase of the product with a unique morphology, high surface area, and moderate electrical conductivity. This comprehensive review provides in-depth information on the use of self-grown electrode materials of different morphologies in electrochemical supercapacitor applications. The present limitations and future prospects, from an industrial application perspectives, of self-grown electrode materials in enhancing energy storage capacity are briefly elaborated.

• 한국분말재료학회지
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• 제28권6호
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• pp.502-508
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• 2021

SiAlON-based ceramics are a type of oxynitride ceramics, which can be used as cutting tools for heat-resistant super alloys (HRSAs). These ceramics are derived from Si3N4 ceramics. SiAlON can be densified using gas-pressure reactive sintering from mixtures of oxides and nitrides. In this study, we prepare an α-/β-SiAlON ceramic composite with a composition of Yb_0.03Y_0.10Si_10.6Al_1.4O_1.0N_15.0. The structure and mechanical/thermal properties of the densified SiAlON specimen are characterized and compared with those of a commercial SiAlON cutting tool. By observing the crystallographic structures and microstructures, the constituent phases of each SiAlON ceramic, such as α-SiAlON, β-SiAlON, and intergranular phases, are identified. By evaluating the mechanical and thermal properties, the contribution of the constituent phases to these properties is discussed as well.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Composites Research
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• 제27권4호
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• pp.123-129
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• 2014

세라믹 기지 복합재료는 세라믹 기지에 고 용융 온도, 낮은 밀도, 고 탄성과 강도를 가진 탄화물, 질화물, 보론화물, 산화물 등의 강화재료를 끼워 넣어 파괴 인성을 높인 것이다. 이들 소재는 우주 비행체의 열 차폐 시스템, 또 고온의 가스 터빈의 연소실, 터빈 블레이드, 고정자(Stator) 베인 등의 부품에 사용되며, 버너와 화염 유지기(Flame holder), 고온 가스 덕트에는 산화 CMC가 사용되고 있고, 극심한 열 충격이 일어나는 브레이크 디스크나 시스템의 부품, 그리고 슬라이드 베어링 부품에도 활용되고 있다. 이러한 CMC에 대한 연구 개발은 미국의 우주 비행체 활용 목적을 비롯하여, 미국, 일본, 유럽에서의 초고속항공기와 가스 터빈용, 그리고 핵 융합용 등의 목적으로 국방과 에너지 산업과 같은 전략적 분야의 활용을 목표로 개발되고 있다.

• 한국분말재료학회지
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• 제9권6호
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• pp.441-448
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• 2002

Dispersions of non-soluble ceramic particles in a metallic matrix can enhance the strength and heat resistance of materials. With the advent of mechanical alloying it became possible to put the theoretical concept into practice by incorporating very fine particles in a flirty uniform distribution into often oxidation- and corrosion- resistant metal matrices. e.g. superalloys. The present paper will give an overview about the mechanical alloying technique as a dry, high energy ball milling process for producing composite metal powders with a fine controlled microstructure. The common way is milling of a mixture of metallic and nonmetallic powders (e.g. oxides. carbides, nitrides, borides) in a high energy ball mill. The heavy mechanical deformation during milling causes also fracture of the ceramic particles to be distributed homogeneously by further milling. The mechanisms of the process are described. To obtain a homogeneous distribution of nano-sized dispersoids in a more ductile matrix (e.g. aluminium-or copper based alloys) a reaction milling is suitable. Dispersoid can be formed in a solid state reaction by introducing materials that react with the matrix either during milling or during a subsequent heat treatment. The pre-conditions for obtaining high quality materials, which require a homogeneous distribution of small dis-persoids, are: milling behaviour of the ductile phase (Al, Cu) will be improved by the additives (e.g. graphite), homogeneous introduction of the additives into the granules is possible and the additive reacts with the matrix or an alloying element to form hard particles that are inert with respect to the matrix also at elevated temperatures. The mechanism of the in-situ formation of dispersoids is described using copper-based alloys as an example. A comparison between the in-situ formation of dispersoids (TiC) in the copper matrix and the milling of Cu-TiC mixtures is given with respect to the microstructure and properties, obtained.

• 한국재료학회지
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• 제23권8호
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• pp.405-422
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• 2013

Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses $H_2O$ and $O_3$ as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these various kinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.

• 한국분말재료학회지
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• 제24권6호
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• pp.431-436
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• 2017

SiAlON-based ceramics are some of the most typical oxynitride ceramic materials, which can be used as cutting tools for heat-resistant super-alloys (HRSA). SiAlON can be fabricated by using gas-pressure reactive sintering from the raw materials, nitrides and oxides such as $Si_3N_4$, AlN, $Al_2O_3$, and $Yb_2O_3$. In this study, we fabricate $Yb_{m/3}Si_{12-(m+n)}Al_{m+n}O_nN_{16-n}$ (m=0.3, n=1.9, 2.3, 2.7) ceramics by using gas-pressure sintering at different sintering temperatures. Then, the densification behavior, phase formation, microstructure, and hardness of the sintered specimens are characterized. We obtain a fully densified specimen with ${\beta}$-SiAlON after gas-pressure sintering at $1820^{\circ}C$ for 90 min. under 10 atm $N_2$ pressure. These SiAlON ceramic materials exhibited hardness values of ~92.9 HRA. The potential of these SiAlON ceramics for cutting tool application is also discussed.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.51-57
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• 2019

구리 표면을 대기 중의 산화로부터 보호하기 위해서 아르곤(Ar)과 질소($N_2$) 가스를 이용하는 two-step플라즈마 공정으로 산화 방지층인 구리 질화물 패시베이션 형성을 연구하였다. Ar 플라즈마는 구리 표면에 존재하는 이물질을 제거하는 동시에 표면을 활성화시켜 다음 단계에서 진행되는 $N_2$ 플라즈마 공정 시 질소 원자와 구리의 반응을 촉진시키는 역할을 수행한다. 본 연구에서는 two-step 플라즈마 공정 중 Ar 플라즈마 공정 조건이 구리 질화물 패시베이션 형성에 미치는 영향을 실험계획법의 완전요인설계를 통하여 분석하였다. XPS 분석에 의하면 Ar 플라즈마 공정 시 낮은 RF 파워와 압력을 사용할 경우 구리 산화물 피크(peak) 면적은 감소하고, 반대로 구리 질화물(Cu4N, Cu3N) 피크 면적은 증가하였다. Ar 플라즈마 공정 시 구리 질화물 형성의 주 효과는 RF 파워로 나타났으며 플라즈마 공정 변수간 교호작용은 거의 없었다.

• 한국분말재료학회지
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• 제30권1호
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• pp.53-64
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• 2023

Atomic layer etching (ALE) is a promising technique with atomic-level thickness controllability and high selectivity based on self-limiting surface reactions. ALE is performed by sequential exposure of the film surface to reactants, which results in surface modification and release of volatile species. Among the various ALE methods, thermal ALE involves a thermally activated reaction by employing gas species to release the modified surface without using energetic species, such as accelerated ions and neutral beams. In this study, the basic principle and surface reaction mechanisms of thermal ALE?processes, including "fluorination-ligand exchange reaction", "conversion-etch reaction", "conversion-fluorination reaction", "oxidation-fluorination reaction", "oxidation-ligand exchange reaction", and "oxidation-conversion-fluorination reaction" are described. In addition, the reported thermal ALE processes for the removal of various oxides, metals, and nitrides are presented.

• Journal of Welding and Joining
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• 제30권1호
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• pp.64-71
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• 2012

The characteristics of high heat input (342kJ/cm) EG (Electro Gas Arc) welded joint of EH36-TM steel has been investigated. The weld metal microstructure consisted of fine acicular ferrite (AF), a little volume of polygonal ferrite (PF) and grain boundary ferrite (GBF). Charpy impact test results of the weld metal and heat affected zone (HAZ) met the requirement of classification rule (Min. 34J at $-20^{\circ}C$). In order to evaluate the relationship between the impact toughness property and the grain size of HAZ, the austenite grain size of HAZ was measured. The prior austenite grain size in Fusion line (F.L+0.1 mm) was about $350{\mu}m$. The grain size in F.L+1.5 mm was measured to be less than $30{\mu}m$ and this region was identified as being included in FGHAZ(Fine Grain HAZ). It is seen that as the austenite grain size decreases, the size of GBF, FSP (Ferrite Side Plate) become smaller and the impact toughness of HAZ increases. Therefore, the CGHAZ was considered to be area up to 1.3mm away from the fusion line. Results of TEM replica analysis for a welded joint implied that very small size ($0.8\sim1.2{\mu}m$) oxygen inclusions played a role of forming fine acicular ferrite in the weld metal. A large amount of (Ti, Mn, Al)xOy oxygen inclusions dispersed, and oxides density was measured to be 4,600-5,300 (ea/mm2). During the welding thermal cycle, the area near a fusion line was reheated to temperature exceeding $1400^{\circ}C$. However, the nitrides and carbides were not completely dissolved near the fusion line because of rapid heating and cooling rate. Instead, they might grow during the cooling process. TiC precipitates of about 50 ~ 100nm size dispersed near the fusion line.