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Thermal Atomic Layer Etching of the Thin Films: A Review

열 원자층 식각법을 이용한 박막 재료 식각 연구

  • Hyeonhui Jo (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Seo Hyun Lee (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Eun Seo Youn (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Ji Eun Seo (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Jin Woo Lee (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Dong Hoon Han (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Seo Ah Nam (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Jeong Hwan Han (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
  • 조현희 (서울과학기술대학교 신소재공학과) ;
  • 이서현 (서울과학기술대학교 신소재공학과) ;
  • 윤은서 (서울과학기술대학교 신소재공학과) ;
  • 서지은 (서울과학기술대학교 신소재공학과) ;
  • 이진우 (서울과학기술대학교 신소재공학과) ;
  • 한동훈 (서울과학기술대학교 신소재공학과) ;
  • 남서아 (서울과학기술대학교 신소재공학과) ;
  • 한정환 (서울과학기술대학교 신소재공학과)
  • Received : 2023.02.08
  • Accepted : 2023.02.17
  • Published : 2023.02.28

Abstract

Atomic layer etching (ALE) is a promising technique with atomic-level thickness controllability and high selectivity based on self-limiting surface reactions. ALE is performed by sequential exposure of the film surface to reactants, which results in surface modification and release of volatile species. Among the various ALE methods, thermal ALE involves a thermally activated reaction by employing gas species to release the modified surface without using energetic species, such as accelerated ions and neutral beams. In this study, the basic principle and surface reaction mechanisms of thermal ALE?processes, including "fluorination-ligand exchange reaction", "conversion-etch reaction", "conversion-fluorination reaction", "oxidation-fluorination reaction", "oxidation-ligand exchange reaction", and "oxidation-conversion-fluorination reaction" are described. In addition, the reported thermal ALE processes for the removal of various oxides, metals, and nitrides are presented.

Keywords

Acknowledgement

이 연구는 서울과학기술대학교 교내 연구비의 지원으로 수행되었습니다.

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